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Voltage divider bias circuit
ANIL PRASAD DADI/ECE/ANITS
Problem #1
Assume that a Si transistor with β=200, VBE=0.7V, VCC=15V
and R1=34KΩ , R2=5.9KΩ , Rc=1KΩ , RE=510Ω is used in voltage
divider bias circuit. Find the bias point.
ANIL PRASAD DADI/ECE/ANITS
Problem #2
Assume that a Si transistor with β=100 and VBE=0.7V is used in
voltage divider bias circuit as shown below.
Find the bias point
ANIL PRASAD DADI/ECE/ANITS
Problem #3
Assume that a Si transistor with β=50, VBE=0.6V, VCC=22.5V
and RC=5.6KΩ is used in voltage divider bias circuit. It is
desired to establish a Q-point at VCE=12V, IC=1.5mA and a
stability factor of S≤3. Find RE,R1,R2
ANIL PRASAD DADI/ECE/ANITS
Problem #3 Solution
Step 1: Find RE
Apply KVL around CE loop
E
C
CECCCC R
I
VRIV







1
EECECCCC RIVRIV 
ANIL PRASAD DADI/ECE/ANITS
Problem #3 Solution
Step 2: Find RTH and VTH
  
  BE
BE
BE
E RR
RR
RR
R
S











1
1
1
1
EEBETHBTH RIVRIV 
E
C
BETH
C
TH R
I
VR
I
V


ANIL PRASAD DADI/ECE/ANITS
Problem #3 Solution
Step 3: Find R1 and R2
21
2
RR
RV
V CC
TH


21 || RRRTH 
ANIL PRASAD DADI/ECE/ANITS
Problem #4
Assume that a Si transistor with β=50, VBE=0.6V, VCC=10V and
RC=3.5KΩ is used in voltage divider bias circuit. It is desired to
establish a Q-point at VCE=5V, IC=1mA and a stability factor of
S≤10. Show the circuit diagram with all the components
values.
ANIL PRASAD DADI/ECE/ANITS
Problem #5
Assume that a Si transistor with β=99, VBE=0.6V, VCC=12V and
RC=2.2KΩ is used in voltage divider bias circuit. It is desired to
establish a Q-point at VCE=5V, IC=2mA and a stability factor of
S≤10. Show the circuit diagram with all the components
values.
ANIL PRASAD DADI/ECE/ANITS
VB
Problem #6
Assume that a Si transistor with β=100 and
VBE=0.7V Determine the bias point
ANIL PRASAD DADI/ECE/ANITS
VB
Problem #6 solution
12
2
RR
R
VV CCB


12
21
RR
RR
RB


ANIL PRASAD DADI/ECE/ANITS
Problem #6 solution
ANIL PRASAD DADI/ECE/ANITS
Problem #6 solution
ANIL PRASAD DADI/ECE/ANITS
Problem #7
Assume that a Si transistor with β=200 and
VBE=0.7V Determine the bias point
ANIL PRASAD DADI/ECE/ANITS
Problem #7
ANIL PRASAD DADI/ECE/ANITS
Problem #7
ANIL PRASAD DADI/ECE/ANITS
Problem #8
Assume that a Si transistor with β=∞, VBE=0.7V, and VCC=3V is
used in voltage divider bias circuit shown below. Determine
the required value of R2(in KΩ) to produce IC=1mA.
VB
ANIL PRASAD DADI/ECE/ANITS
Problem #8 Solution
Given β=∞
IC=IE ( since IB=0)
VB
12
2
RR
R
VV CCB


EBEB VVV 
EEE RIV 
ANIL PRASAD DADI/ECE/ANITS

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Voltage divider bias circuit | Dept of ECE | ANITS

  • 1. Voltage divider bias circuit ANIL PRASAD DADI/ECE/ANITS
  • 2. Problem #1 Assume that a Si transistor with β=200, VBE=0.7V, VCC=15V and R1=34KΩ , R2=5.9KΩ , Rc=1KΩ , RE=510Ω is used in voltage divider bias circuit. Find the bias point. ANIL PRASAD DADI/ECE/ANITS
  • 3. Problem #2 Assume that a Si transistor with β=100 and VBE=0.7V is used in voltage divider bias circuit as shown below. Find the bias point ANIL PRASAD DADI/ECE/ANITS
  • 4. Problem #3 Assume that a Si transistor with β=50, VBE=0.6V, VCC=22.5V and RC=5.6KΩ is used in voltage divider bias circuit. It is desired to establish a Q-point at VCE=12V, IC=1.5mA and a stability factor of S≤3. Find RE,R1,R2 ANIL PRASAD DADI/ECE/ANITS
  • 5. Problem #3 Solution Step 1: Find RE Apply KVL around CE loop E C CECCCC R I VRIV        1 EECECCCC RIVRIV  ANIL PRASAD DADI/ECE/ANITS
  • 6. Problem #3 Solution Step 2: Find RTH and VTH      BE BE BE E RR RR RR R S            1 1 1 1 EEBETHBTH RIVRIV  E C BETH C TH R I VR I V   ANIL PRASAD DADI/ECE/ANITS
  • 7. Problem #3 Solution Step 3: Find R1 and R2 21 2 RR RV V CC TH   21 || RRRTH  ANIL PRASAD DADI/ECE/ANITS
  • 8. Problem #4 Assume that a Si transistor with β=50, VBE=0.6V, VCC=10V and RC=3.5KΩ is used in voltage divider bias circuit. It is desired to establish a Q-point at VCE=5V, IC=1mA and a stability factor of S≤10. Show the circuit diagram with all the components values. ANIL PRASAD DADI/ECE/ANITS
  • 9. Problem #5 Assume that a Si transistor with β=99, VBE=0.6V, VCC=12V and RC=2.2KΩ is used in voltage divider bias circuit. It is desired to establish a Q-point at VCE=5V, IC=2mA and a stability factor of S≤10. Show the circuit diagram with all the components values. ANIL PRASAD DADI/ECE/ANITS
  • 10. VB Problem #6 Assume that a Si transistor with β=100 and VBE=0.7V Determine the bias point ANIL PRASAD DADI/ECE/ANITS
  • 11. VB Problem #6 solution 12 2 RR R VV CCB   12 21 RR RR RB   ANIL PRASAD DADI/ECE/ANITS
  • 12. Problem #6 solution ANIL PRASAD DADI/ECE/ANITS
  • 13. Problem #6 solution ANIL PRASAD DADI/ECE/ANITS
  • 14. Problem #7 Assume that a Si transistor with β=200 and VBE=0.7V Determine the bias point ANIL PRASAD DADI/ECE/ANITS
  • 15. Problem #7 ANIL PRASAD DADI/ECE/ANITS
  • 16. Problem #7 ANIL PRASAD DADI/ECE/ANITS
  • 17. Problem #8 Assume that a Si transistor with β=∞, VBE=0.7V, and VCC=3V is used in voltage divider bias circuit shown below. Determine the required value of R2(in KΩ) to produce IC=1mA. VB ANIL PRASAD DADI/ECE/ANITS
  • 18. Problem #8 Solution Given β=∞ IC=IE ( since IB=0) VB 12 2 RR R VV CCB   EBEB VVV  EEE RIV  ANIL PRASAD DADI/ECE/ANITS