SPICE MODEL of SSM3K104TU (Professional+BDP Model) in SPICE PARK
•
0 likes•319 views
This document provides a device modeling report for a TOSHIBA SSM3K104TU power MOSFET. It includes: 1) Details of the MOSFET components and manufacturer. 2) A PSpice model listing parameters for the MOSFET. 3) Results of circuit simulations characterizing the MOSFET's transconductance, Vgs-Id relationship, Rds(on), gate charge, capacitance, switching time, output characteristics, forward/reverse currents, and zener voltage. Comparisons to measurement data show good agreement between simulation and measurement.
Recommended
Recommended
More Related Content
What's hot
What's hot (20)
Similar to SPICE MODEL of SSM3K104TU (Professional+BDP Model) in SPICE PARK
Similar to SPICE MODEL of SSM3K104TU (Professional+BDP Model) in SPICE PARK (16)
More from Tsuyoshi Horigome
More from Tsuyoshi Horigome (20)
Recently uploaded
Recently uploaded (20)
SPICE MODEL of SSM3K104TU (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: SSM3K104TU MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. Transconductance Characteristic Circuit Simulation Result 10 Measurement Simulation 8 6 gfs 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID : Drain Current A Comparison table gfs Id(A) Error(%) Measurement Simulation 0.010 0.667 0.641 -3.898 0.020 1.000 0.968 -3.200 0.050 1.515 1.512 -0.198 0.100 2.170 2.155 -0.691 0.200 2.940 2.938 -0.068 0.500 4.545 4.544 -0.022 1.000 6.250 6.242 -0.128 2.000 8.696 8.695 -0.011 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 1.0A 100mA 10mA 1.0mA 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(V3) V_V2 Evaluation circuit V3 0Vdc U2 SSM3K104TU Vv ariable 10Vdc 10Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation 1.00 ID : Drain Current A 0.10 0.01 0.0 0.4 0.8 1.2 1.6 2.0 VGS : Gate to Source Voltage V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.010 0.750 0.754 0.533 0.020 0.780 0.766 -1.795 0.050 0.800 0.791 -1.125 0.100 0.840 0.819 -2.500 0.200 0.880 0.859 -2.386 0.500 0.950 0.939 -1.158 1.000 1.060 1.031 -2.736 2.000 1.210 1.165 -3.719 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Rds(on) Characteristic Circuit Simulation result 2.0A 1.5A 1.0A 0.5A 0A 0V 10mV 20mV 30mV 40mV 50mV I(V3) V_VDS/2 Evaluation circuit V3 0Vdc U2 SSM3K104TU VDS 4Vdc 0Vdc VGS 0 Simulation Result ID=2A, VGS=4V Measurement Simulation Error (%) R DS (on) () 0.044 0.0440 0.068 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Gate Charge Characteristic Circuit Simulation result 15V 12V 9V 6V 3V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc U2 SSM3K104TU PER = 1000u Dbreak PW = 600u W1 TF = 10n + D1 TR = 10n I2 - TD = 0 3Adc I2 = 1m W I1 IOFF = 0.1mA I1 = 0 ION = 0uA V1 15Vdc 0 Simulation Result VDD=15V,ID=3A Measurement Simulation Error (%) ,VGS=10V Qgs(nc) 1.040 1.048 0.769 Qgd(nc) 2.000 2.016 0.800 Qg(nc) 20.800 20.806 0.029 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Capacitance Characteristic Measurement Simulation Simulation Result VDS(V) Cbd(pF) Error(%) Measurement Simulation 1.000 850.000 849.000 -0.118 2.000 620.000 640.000 3.226 5.000 440.000 448.000 1.818 10.000 340.000 330.000 -2.941 20.000 250.000 243.000 -2.800 50.000 160.000 159.000 -0.625 100.000 114.000 113.000 -0.877 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Switching Time Characteristic Circuit Simulation result 15V 12V 9V 6V 3V 0V 1.85us 1.95us 2.00us 2.10us 2.20us 2.25us 2.35us V(2)*4 V(3) Time Evaluation circuit 3 L2 50n U2 RL SSM3K104TU 5 R1 L1 2 V1 = 0 4.7 30nH VDD V2 = 5 V2 10Vdc TD = 2u R2 TR = 6n TF = 7n 4.7 PW = 2u PER = 10u 0 Simulation Result ID=2A, VDD=10V Measurement Simulation Error(%) VGS=2.5V Ton(ns) 18.000 18.360 2.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Output Characteristic Circuit Simulation result 6.0A 10 4 2.5 1.8 5.0A 1.5 4.0A 3.0A 2.0A VGS= 1.2 V 1.0A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U2 SSM3K104TU Vv ariable 10Vdc 0Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 10mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc SSM3K104TU U3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Comparison Graph Circuit Simulation Result 10.00 Measurement Simulation Drain reverse current IDR(A) 1.00 0.10 0.01 0 0.2 0.4 0.6 0.8 1 1.2 Source: Drain voltage VSD(V) Simulation Result VDS(V) VDS(V) IDR(A) %Error Measurement Simulation 0.010 0.488 0.489 0.205 0.020 0.509 0.511 0.393 0.050 0.539 0.540 0.186 0.100 0.565 0.563 -0.354 0.200 0.590 0.586 -0.678 0.500 0.614 0.615 0.163 1.000 0.640 0.638 -0.313 2.000 0.655 0.660 0.763 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 19.98us 20.00us 20.02us 20.04us 20.06us 20.08us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 V2 = 10.7v TD = 1n DSSM3K104TU TR = 10ns U2 TF = 6ns PW = 20us PER = 100us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) Trj(ns) 10.000 10.129 1.290 trb(ns) 11.500 11.633 1.157 trr(ns) 21.500 21.762 1.219 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristic Reference Trj=10(ns) Trb=11.5(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Zener Voltage Characteristic Circuit Simulation Result 10uA 9uA 8uA 7uA 6uA 5uA 4uA 3uA 2uA 1uA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.01m U2 V1 SSM3K104TU 0Vdc R2 100MEG 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008