SPICE MODEL of 2SK4065-DL-E (Professional+BDP Model) in SPICE PARK
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SPICE MODEL of 2SK4065-DL-E (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK4065-DL-E (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: MOSFET (Professional Model) PART NUMBER: 2SK4065-DL-E MANUFACTURER: SANYO REMARK: Body Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 1
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 2
- 3. Transconductance Characteristic Circuit Simulation Result 160 Measurement 140 Simulation 120 100 80 gfs(S) 60 40 20 0 0.0 20.0 40.0 60.0 80.0 Drain Current ID (A) Comparison table gfs(S) Id(A) Error (%) Measurement Simulation 1 19.000 19.944 4.97 2 27.000 28.016 3.76 5 43.000 43.627 1.46 10 62.000 60.622 -2.22 20 84.500 83.642 -1.02 50 125.000 126.126 0.90 70 144.000 145.866 1.30 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 3
- 4. Vgs-Id Characteristic Circuit Simulation result 200A 180A 160A 140A 120A 100A 80A 60A 40A 20A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 V2 2SK4065-DL-E 10 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 4
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 2.150 2.223 3.39 2 2.200 2.264 2.93 5 2.300 2.348 2.09 10 2.400 2.444 1.82 20 2.550 2.582 1.26 50 2.850 2.867 0.59 100 3.200 3.204 0.12 200 3.700 3.710 0.26 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 5
- 6. Rds(on) Characteristic Circuit Simulation result 50A 45A 40A 35A 30A 25A 20A 15A 10A 5A 0A 0V 50mV 100mV 150mV 200mV 250mV I(V3) V_VDS Evaluation circuit V3 0Vdc U1 VDS 2SK4065-DL-E 0Vdc V1 10 0 Simulation Result ID = 50A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 4.600 4.600 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 6
- 7. Gate Charge Characteristic Circuit Simulation result 10V 9V 8V 7V 6V 5V 4V 3V 2V 1V 0V 0 50n 100n 150n 200n 250n V(W1:3) Time*1mA Evaluation circuit I2 D2 U1 Dbreak 100 2SK4065-DL-E PER = 1000u W1 PW = 600u + TF = 5n VDD TR = 5n - TD = 0 I1 W I2 = 1m IOFF = 1mA 35 I1 = 0 ION = 0uA 0 Simulation Result VDD=35V, ID=100A, Measurement Simulation Error (%) VGS=10V Qgs nC 40.000 40.059 0.15 Qgd nC 50.000 50.056 0.11 Qg nC 220.000 220.479 0.22 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 7
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error (%) Measurement Simulation 0.00 1500.000 1500.000 0.00 5.00 410.000 413.330 0.81 10.00 300.000 299.470 -0.18 15.00 250.000 246.940 -1.22 20.00 220.000 215.080 -2.24 25.00 190.000 193.120 1.64 30.00 175.000 176.805 1.03 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 8
- 9. Switching Time Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us V(U1:G) V(U1:D)/3.5 Time Evaluation circuit L2 RL 50nH 0.7 R1 L1 U1 2SK4065-DL-E VDD V1 = 0 30nH 36.5Vdc V2 = 20 V2 50 TD = 1u TR = 5n R2 TF = 5n 50 PW = 10u PER = 20u 0 Simulation Result ID=50A, VDD=35V Measurement Simulation Error(%) VGS=0/10V td(on) ns 80.000 79.986 -0.02 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 9
- 10. Output Characteristic Circuit Simulation result 200A 10, 8 180A 6 4 160A 140A 120A 100A 80A VGS=3V 60A 40A 20A 0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(V3) V_V2 Evaluation circuit V3 0Vdc U1 V2 2SK4065-DL-E V1 2.0 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 10
- 11. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 10mA 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V I(Vsense) V_VSD Evaluation Circuit Vsense 0Vdc U1 VSD 2SK4065-DL-E 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 11
- 12. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 0.01 0.5100 0.5127 0.54 0.02 0.5300 0.5306 0.11 0.05 0.5550 0.5542 -0.14 0.1 0.5700 0.5721 0.38 0.2 0.5900 0.5902 0.03 0.5 0.6150 0.6143 -0.11 1 0.6350 0.6332 -0.29 2 0.6550 0.6530 -0.30 5 0.6850 0.6826 -0.34 10 0.7150 0.7105 -0.62 20 0.7550 0.7485 -0.86 50 0.8300 0.8325 0.30 100 0.9400 0.9511 1.18 200 1.1800 1.1704 -0.81 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 12
- 13. Reverse Recovery Characteristics Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 18.4us 19.2us 20.0us 20.8us 21.6us 22.4us I(R1) Time Evaluation Circuit R1 50 V1 = -9.40v V1 V2 = 10.60v TD = 190ns U1 TR = 10ns D2SK4065-DL-E_P TF = 10ns PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 40.000 40.648 1.62 trb ns 184.000 183.895 -0.06 trr ns 224.000 224.543 0.24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 13
- 14. Reverse Recovery Characteristic Reference Measurement Trj=40(ns) Trb=184(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 14
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) V_V1 Evaluation Circuit R1 0.001m V1 0Vdc R2 U1 100MEG 2SK4065-DL-E 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 15
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2008 16