The document provides a detailed device modeling report for a power MOSFET (2SK3728-01MR) from Fuji Electric Co., Ltd., including parameters such as transconductance, gate capacitance, and characteristics of both the power MOSFET and its body diode. It contains simulation results comparing measurements, error percentages, and circuit specifications related to various behaviors of the device under different conditions. The report also includes performance metrics for characteristics like switching time, output, and reverse recovery, with diagrams and tables summarizing the findings.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: 2SK3728-01MR
MANUFACTURER: Fuji Electric Co., Ltd.
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
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4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.200 0.900 0.940 4.444
0.500 1.480 1.478 -0.135
1.000 2.070 2.077 0.338
2.000 2.900 2.912 0.414
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
5.0A
1.0A
100mA
50mA
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 25 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.100 4.815 4.845 0.623
0.200 4.980 4.972 -0.159
0.500 5.240 5.222 -0.351
1.000 5.490 5.495 0.087
2.000 5.900 5.904 0.066
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
1.1A
1.0A
0.9A
0.8A
0.7A
0.6A
0.5A
0.4A
0.3A
0.2A
0.1A
0A
0V 2.5V 5.0V 7.5V 10.0V 15.0V 20.0V 25.0V
I(V3)
V_V2
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 25Vdc
0
Simulation Result
ID=1.1, VGS=10V Measurement Simulation Error (%)
R DS (on) 6.15  6.15 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0 2n 4n 6n 8n 10n 12n 14n
V(W1:2)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u I2
TF = 10n W1
TR = 10n + 2.2Adc
TD = 0
-
I2 = 10m
I1 W
I1 = 0 IOFF = 10mA V1
ION = 0uA 450Vdc
0
Simulation Result
VDD=450V Measurement Simulation Error (%)
,ID=2.2A
Qgs 3.40 nC 3.40 nC 0.44
Qgd 2.20 nC 2.21 nC 0.40
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic (Vds vs. Cbd)
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
5.000 100.000 101.250 1.250
10.000 59.500 60.000 0.840
20.000 37.700 35.900 -4.775
50.000 17.700 17.200 -2.825
100.000 10.900 10.370 -4.862
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =600 (V)
VGS = 10V
8V
4V
0V
4.96us 5.00us 5.04us 5.08us 5.12us 5.16us
V(2) V(3)/60
Time
Evaluation circuit
3
L1
50nH
V3
0Vdc
RL
542
R1 L2
2
V1 = 0
V1 10 30nH VDD
V2 = 10 U11
TD = 5u 2SK3728-01MRS
TR = 6n 600
TF = 7n
PW = 10u
PER = 1000u
0
0 0
Simulation Result
ID=1.1A, VDD=600V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 17.00 ns 17.00 ns 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
2.0A
6.5V
1.8A 6.0V
1.6A
1.4A
1.2A
1.0A 5.5V
0.8A
0.6A
0.4A
0.2A VGS=5.0V
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(V3)
V_V2
Evaluation circuit
V2
0V dc
V3
V1
25 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristic Reference
6.5V
6.0V
5.5V
VGS=5.0V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
10A
1.0A
100mA
10mA
0.5V 0.6V 0.8V 1.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.010 0.610 0.604 -1.1
0.020 0.630 0.634 0.6
0.050 0.665 0.664 -0.2
0.100 0.685 0.685 0.0
0.200 0.710 0.712 0.3
0.500 0.750 0.748 -0.3
1.000 0.780 0.780 0.0
2.000 0.820 0.820 0.0
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15. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
12us 14us 16us 18us 20us 22us 24us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0.4u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0 0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.750 us 1.755 ns 0.286
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16. Reverse Recovery Characteristic Reference
Trj=1.75(us)
Trb=4.25(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005