SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3644-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results of a power MOSFET transistor and its internal body diode. It includes tables of parameters for the MOSFET and diode models, graphs comparing simulated and measured output characteristics like forward current and switching times, and evaluation circuits used in the simulations. The models aim to accurately represent the electrical behavior of the real components for circuit design and analysis.
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET manufactured by International Rectifier. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the PSpice models used to simulate the MOSFET's electrical characteristics.
3) Results of simulations validating the MOSFET's transconductance, capacitance, switching time and other characteristics against manufacturer measurements.
4) Circuit diagrams of the evaluation setups used in the simulations.
SPICE MODEL of IRFIB7N50A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3611-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3611-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N60A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N60A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3644-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results of a power MOSFET transistor and its internal body diode. It includes tables of parameters for the MOSFET and diode models, graphs comparing simulated and measured output characteristics like forward current and switching times, and evaluation circuits used in the simulations. The models aim to accurately represent the electrical behavior of the real components for circuit design and analysis.
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N65A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET manufactured by International Rectifier. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the PSpice models used to simulate the MOSFET's electrical characteristics.
3) Results of simulations validating the MOSFET's transconductance, capacitance, switching time and other characteristics against manufacturer measurements.
4) Circuit diagrams of the evaluation setups used in the simulations.
SPICE MODEL of IRFIB7N50A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3677-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3677-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3728-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3728-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the Pspice models used to simulate the MOSFET's electrical characteristics including its power MOSFET, body diode and transconductance models.
3) Simulation results and comparisons to measurement data for various electrical characteristics like transconductance, Vgs-Id, Id-Rds(on), gate charge, switching times and reverse recovery.
4) Diagrams of the evaluation circuits used to simulate the characteristics.
SPICE MODEL of 2SK3681-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3681-01 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3603-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3603-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPA20N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of a Power MOSFET transistor. It describes the device components, model parameters, and simulation results validating the model, including transistor characteristics like transconductance, capacitance, switching time, and reverse recovery behavior.
SPICE MODEL of SPW47N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW47N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and characterization of a power MOSFET transistor. It describes the device components, provides the model parameters for simulation, and shows the results of simulating and comparing to measured data for key transistor characteristics including transconductance, voltage-current behavior, capacitance, switching times, output, and reverse recovery. Circuit schematics are included to describe the simulation setup and conditions.
SPICE MODEL of 2SK2563 (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01L (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01L (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains an SPICE model for a SIDAC component with the part number K1V14 manufactured by SHINDENGEN. The SPICE model includes subcircuit components and parameters to model the electrical behavior and switching characteristics of the SIDAC, including its turn-on and turn-off voltages, holding currents, and triggering mechanisms. Simulation results of the electrical behavior and I-V characteristics of the modeled SIDAC component are also presented.
This document contains an SPICE model for a SIDAC component with the part number K1V14 manufactured by SHINDENGEN. The SPICE model includes subcircuit components and parameters to model the electrical behavior and switching characteristics of the SIDAC, including its turn-on and turn-off voltages, holding currents, and triggering mechanisms. Simulation results of the I-V characteristic are also presented.
SPICE MODEL of 2SK2563 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3677-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3677-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFIB7N50A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2740 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2740 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3728-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3728-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPP11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW11N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N30A (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N65A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of an IRFB9N65A power MOSFET. It includes:
1) Details of the MOSFET components and manufacturer.
2) Descriptions and parameters of the Pspice models used to simulate the MOSFET's electrical characteristics including its power MOSFET, body diode and transconductance models.
3) Simulation results and comparisons to measurement data for various electrical characteristics like transconductance, Vgs-Id, Id-Rds(on), gate charge, switching times and reverse recovery.
4) Diagrams of the evaluation circuits used to simulate the characteristics.
SPICE MODEL of 2SK3681-01 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3681-01 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3603-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3603-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPA20N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and simulation of a Power MOSFET transistor. It describes the device components, model parameters, and simulation results validating the model, including transistor characteristics like transconductance, capacitance, switching time, and reverse recovery behavior.
SPICE MODEL of SPW47N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW47N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the modeling and characterization of a power MOSFET transistor. It describes the device components, provides the model parameters for simulation, and shows the results of simulating and comparing to measured data for key transistor characteristics including transconductance, voltage-current behavior, capacitance, switching times, output, and reverse recovery. Circuit schematics are included to describe the simulation setup and conditions.
SPICE MODEL of 2SK2563 (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2661 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2563 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01S (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01L (Professional+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01L (Professional+BDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains an SPICE model for a SIDAC component with the part number K1V14 manufactured by SHINDENGEN. The SPICE model includes subcircuit components and parameters to model the electrical behavior and switching characteristics of the SIDAC, including its turn-on and turn-off voltages, holding currents, and triggering mechanisms. Simulation results of the electrical behavior and I-V characteristics of the modeled SIDAC component are also presented.
This document contains an SPICE model for a SIDAC component with the part number K1V14 manufactured by SHINDENGEN. The SPICE model includes subcircuit components and parameters to model the electrical behavior and switching characteristics of the SIDAC, including its turn-on and turn-off voltages, holding currents, and triggering mechanisms. Simulation results of the I-V characteristic are also presented.
SPICE MODEL of MA2YF80 (Standard Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of MA2YF80 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of MA2YF80 (Professional Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of MA2YF80 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a device modeling report from Bee Technologies for a Schottky rectifier diode with part number 11DQ06 from manufacturer NIEC. It includes the SPICE model parameters for the diode, simulation results of its forward current and junction capacitance characteristics, and comparisons to measurement data with less than 3% error.
This document contains a device modeling report from Bee Technologies for a Schottky rectifier diode with part number 11DQ06 from manufacturer NIEC. It includes the SPICE model parameters for the diode, simulation results of its forward current and junction capacitance characteristics, and comparisons to measurement data with good agreement within 3%.
2SK4017 (Professional Model) PSpice Model (Free SPICE Model)Tsuyoshi Horigome
This document provides a device modeling report for a TOSHIBA 2SK4017 MOSFET. It includes the SPICE model, equivalent circuit diagrams, simulation results comparing measurements and simulations, and characterization of key parameters like transconductance, drain current, switching time, and more. The body diode and ESD protection diode models are also included.
2SK4017 (Standard Model) PSpice Model (Free SPICE Model)Tsuyoshi Horigome
This document provides a SPICE model for the TOSHIBA 2SK4017 MOSFET. It includes:
1. Model parameters for the MOSFET and its internal body diode.
2. Simulation results that match measurements of the MOSFET's electrical characteristics like transconductance, drain current, and switching times.
3. Circuit simulations validating the model, including the forward and reverse characteristics of the internal body diode.
ALL SPICE Models (4,362 Models) MAY2015 in SPICE PARK Tsuyoshi Horigome
This document contains a parts list from Siam Bee Technologies' SPICEPARK library in May 2015. It includes 4,362 SPICE models across various categories like semiconductors, passive parts, batteries, and mechanical parts. The semiconductor section provides details of 282 general purpose diode models from manufacturers like Fairchild, Fuji, International Rectifier, Intersil, and ROHM with package types and thermal characteristics.
The document is a parts list and specifications for diodes and other semiconductor components from Siam Bee Technologies' SPICEPARK catalog in September 2015. It contains information on 4,422 total parts, including the manufacturer, model number, type, and thermal characteristics for 282 general purpose rectifier diodes. The majority of the parts listed are semiconductor components like diodes, transistors, integrated circuits, and passive components.
This document provides a list of 257 SPICE models from various manufacturers that are available for free download. The models are organized into categories such as Diode/General Purpose Rectifier, Diode/Schottky Rectifier, Laser Diode, Junction FET, MOSFET, and more. For each category, the document lists the number of models available from each manufacturer and provides details on the specific part numbers and model parameters.
This document provides a list of 4,412 models of electronic components from various manufacturers. It includes semiconductors, passive parts, batteries, mechanical parts, motors, lamps, and power supplies. For each component type, the document specifies the manufacturer, part number, model, thermal characteristics, and last update. It appears to be a comprehensive parts list from a company called Siam Bee Technologies for their SPICEPARK component library.
SPICE MODEL of SPB11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPB11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPU02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPA11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPW35N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW35N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPI11N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of IRFB9N30A (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of IRFB9N30A (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPD02N60C3 (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of SPB02N60C3 (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
This document summarizes the key parameters and simulation results for a power MOSFET transistor model. It includes the component name and manufacturer, a list of model parameters, graphs comparing measurement and simulation results for characteristics like transconductance, voltage-current relationship, and switching times, and evaluation circuits used in the simulations.
SPICE MODEL of SPW20N60CFD (Professional+BDSP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of SPW20N60CFD (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3770-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3872-01L (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3872-01L (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)Tsuyoshi Horigome
This document provides an inventory update of 6,747 parts at Spice Park as of April 2024. It lists the part numbers, manufacturers, and quantities of various semiconductor components, including 1,697 Schottky rectifier diodes from 29 different manufacturers. It also includes details on passive components, batteries, mechanical parts, motors, and lamps in the inventory.
The document provides an inventory update from April 2024 of the Spice Park collection which contains 6,747 electronic components. It includes tables listing the types of semiconductor components, passive parts, batteries, mechanical parts, motors, and lamps in the collection along with their manufacturer and quantities. One of the semiconductor components, the general purpose rectifier diode, is broken down into a more detailed table with 116 entries providing part numbers, manufacturers, thermal ratings, and remarks.
Update 31 models(Diode/General ) in SPICE PARK(MAR2024)Tsuyoshi Horigome
The document provides an inventory update from March 2024 of parts in the Spice Park warehouse. It lists 6,725 total parts across various categories including semiconductors, passive parts, batteries, mechanical parts, motors, and lamps. The semiconductor section lists 652 general purpose rectifier diodes from 18 different manufacturers with quantities ranging from 2 to 145 pieces.
This document provides an inventory list of parts at Spice Park as of March 2024. It contains 3 sections - Semiconductor parts (diodes, transistors, ICs etc.), Passive parts (capacitors, resistors etc.), and Battery parts. For Semiconductor parts, it lists 36 different part types and provides the quantity of each part. It then provides further details of Diode/General Purpose Rectifiers, listing the manufacturer and quantity of 652 individual part numbers.
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The document provides an inventory update from February 2024 of Spice Park, which contains 6,694 total pieces of electronic components and parts. It lists 36 categories of semiconductor devices, 11 categories of passive parts, 10 types of batteries, 5 mechanical parts, DC motors, lamps, and power supplies. It provides the most detailed listing for solar cells, with 1,003 total pieces from 51 manufacturers listed with part numbers.
The document provides an inventory update from February 2024 of Spice Park, which contains 6,694 electronic components. It lists the components by type (e.g. semiconductor), part number, manufacturer, thermal rating, and quantity on hand. For example, it shows that there are 621 general purpose rectifier diodes from manufacturers such as Fairchild, Fuji, Intersil, Rohm, Shindengen, and Toshiba. The detailed four-page section provides further information on the first item, general purpose rectifier diodes, including 152 individual part numbers and specifications.
This document discusses circuit simulations using LTspice. It describes driving a circuit simulation by inserting a 250 ohm resistor between the output terminals. It also describes simulating a 1 channel bridge circuit where the DUT1 and DUT2 resistors are both set to 100 ohms and the input voltage is set to either 1V or 5V.
This document discusses parametric sweeps of external and internal resistance values Rg for circuit simulation in LTspice. It also references outputting a waveform similar to a report on fall time characteristics for a device modeling report with customer Samsung.
This talk will cover ScyllaDB Architecture from the cluster-level view and zoom in on data distribution and internal node architecture. In the process, we will learn the secret sauce used to get ScyllaDB's high availability and superior performance. We will also touch on the upcoming changes to ScyllaDB architecture, moving to strongly consistent metadata and tablets.
Introduction of Cybersecurity with OSS at Code Europe 2024Hiroshi SHIBATA
I develop the Ruby programming language, RubyGems, and Bundler, which are package managers for Ruby. Today, I will introduce how to enhance the security of your application using open-source software (OSS) examples from Ruby and RubyGems.
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Next, let's discuss package managers. Package managers play a critical role in the OSS ecosystem. I'll explain how to manage library dependencies in your application.
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How to Interpret Trends in the Kalyan Rajdhani Mix Chart.pdfChart Kalyan
A Mix Chart displays historical data of numbers in a graphical or tabular form. The Kalyan Rajdhani Mix Chart specifically shows the results of a sequence of numbers over different periods.
Conversational agents, or chatbots, are increasingly used to access all sorts of services using natural language. While open-domain chatbots - like ChatGPT - can converse on any topic, task-oriented chatbots - the focus of this paper - are designed for specific tasks, like booking a flight, obtaining customer support, or setting an appointment. Like any other software, task-oriented chatbots need to be properly tested, usually by defining and executing test scenarios (i.e., sequences of user-chatbot interactions). However, there is currently a lack of methods to quantify the completeness and strength of such test scenarios, which can lead to low-quality tests, and hence to buggy chatbots.
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LF Energy Webinar: Carbon Data Specifications: Mechanisms to Improve Data Acc...DanBrown980551
This LF Energy webinar took place June 20, 2024. It featured:
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In response to the urgency and scale required to effectively address climate change, open source solutions offer significant potential for driving innovation and progress. Currently, there is a growing demand for standardization and interoperability in energy data and modeling. Open source standards and specifications within the energy sector can also alleviate challenges associated with data fragmentation, transparency, and accessibility. At the same time, it is crucial to consider privacy and security concerns throughout the development of open source platforms.
This webinar will delve into the motivations behind establishing LF Energy’s Carbon Data Specification Consortium. It will provide an overview of the draft specifications and the ongoing progress made by the respective working groups.
Three primary specifications will be discussed:
-Discovery and client registration, emphasizing transparent processes and secure and private access
-Customer data, centering around customer tariffs, bills, energy usage, and full consumption disclosure
-Power systems data, focusing on grid data, inclusive of transmission and distribution networks, generation, intergrid power flows, and market settlement data
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Integration with BrainChip’s Akida neuromorphic hardware IP further enhances TENNs’ capabilities, enabling the realization of highly capable, portable and passively cooled edge devices. This presentation delves into the technical innovations underlying TENNs, presents real-world benchmarks, and elucidates how this cutting-edge approach is positioned to revolutionize edge AI across diverse applications.
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SPICE MODEL of IRFB9N60A (Professional+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: IRFB9N60A
MANUFACTURER: International Rectifier
REMARK: Body Diode (Standard)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs (S)
ID(A) Error (%)
Measurement Simulation
0.5 2.5 2.565 2.60
1 3.63 3.591 1.07
2 5 5.005 0.10
5 7.69 7.69 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Vgs-Id Characteristic
Circuit Simulation result
40A
10A
1.0A
100mA
4V 5V 6V 7V 8V 9V 10V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 50 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1.000 4.875 4.898 0.478
2.000 5.125 5.131 0.111
5.000 5.625 5.602 -0.411
10.000 6.125 6.149 0.393
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
7. Id-Rds(on) Characteristic
Circuit Simulation result
5.0A
0A
0V 5V 10V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
50Vdc
10.0Vdc
0
Simulation Result
ID=5.5, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.75 0.75 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =300 (V)
VGS = 10V
8V
4V
0V
5.00us 5.05us 5.10us 5.15us
V(2) V(3)/30
Time
Evaluation circuit
L1 RL
3
V3 0.0 5uH 31 .8
0V dc
VDD
30 0
L2 RG
2
0.0 3uH
V1 = 0
V1 9.1
V2 = 10 0
TD = 5u
TR = 6n
TF = 7n
PW = 5 u
PE R = 10 0u
0 0
Simulation Result
ID=9.2A, VDD=300V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 13.000 ns 13.006 ns 0.046
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
11. Output Characteristic
Circuit Simulation result
20A
10.0V 7.0V
10A
6.0V
5.5V
VGS=5.0V
0A
0V 25V 50V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
50 Vd c
10 .0Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
50A
10A
1.0A
100mA
0.2V 0.5V 1.0V 1.2V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.200 0.523 0.525 0.325
0.500 0.567 0.565 -0.423
1.000 0.600 0.600 0.012
2.000 0.646 0.645 -0.146
5.000 0.734 0.737 0.354
10.000 0.859 0.858 -0.105
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
8us 10us 14us 16us 18us 22us 24us 28us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.4} V1
V2 = {10.7}
TD = 1.275u
TR = 10n
TF = 10n
PW = 15u
PER = 100u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error(%)
Trj +Trb 1.720 us 1.721 us 0.058
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Reverse Recovery Characteristic Reference
Measurement
trj = 1.08(us)
trb = 0.64(us)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005