The document presents a detailed device modeling report for a power MOSFET (part number: 2SK3872-01SJ) manufactured by Fuji Electric, including various circuit simulation results and parameters such as transconductance, threshold voltage, and capacitance characteristics. It includes comparative data between measurements and simulations across multiple performance characteristics, including transconductance, output current, switching time, and reverse recovery traits. All results are copyrighted by Bee Technologies Inc. and demonstrate the MOSFET's electrical performance through various tests and simulations.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3872-01SJ
MANUFACTURER: Fuji Electric
REMARK: Body Diode (Professional)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. POWER MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Comparison table
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.7 5.848 2.6
2 8 8.092 1.15
5 12.5 12.2 -2.4
10 16.6 16.442 -0.95
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
100A
80A
60A
40A
20A
0A
0V 5V 10V
I(V2)
V_V1
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 10 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.4 5.390 -0.185
2 5.57 5.532 -0.682
5 5.89 5.833 -0.968
10 6.22 6.188 -0.514
20 6.73 6.720 -0.149
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
20A
10A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
V3
V1
10Vdc 10Vdc
0
Simulation Result
ID=20, VGS=10V Measurement Simulation Error (%)
R DS (on) 58 m 58 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
20V
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:3)
Time*10ms
Evaluation circuit
V2
0Vdc
Dbreak
PER = 1000u D1
PW = 600u I2
TF = 10n W1
TR = 10n + 40Adc
TD = 0
I2 = 10m
-
I1 W
I1 = 0 IOFF = 1mA V1
ION = 0uA 115Vdc
0
Simulation Result
VDD=115V,ID=40A Measurement Simulation Error (%)
Qgs 18 nC 18.00 nC 0
Qgd 12 nC 12.44 nC 3.67
Qg 42 nC 42 nC 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 2150 2130 -0.930
2 1740 1770 1.724
5 1240 1230 -0.806
10 880 860 -2.273
100 190 208 9.474
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
12V
VDS =180 (V)
VGS = 10V
8V
4V
0V
5.00us 5.10us 5.20us 5.25us
V(2) V(3)/18
Time
Evaluation circuit
L1 RL
3
V3 0.05uH 8.9
0Vdc
VDD
180
L2 RG
2
0.03uH
10
V1 = 0 0
V1
V2 = 10
TD = 5u
TR = 6n
TF = 7n
PW = 5u
PER = 100u
0
0
Simulation Result
ID=20A, VDD=180V
Measurement Simulation Error(%)
VGS=0/10V
td (on) 28 ns 28.056 ns 0.2
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
20A
7.0V
6.5V
10A
6.0V
VGS=5.5V
0A
0V 10V 20V
I(V2)
V_V3
Evaluation circuit
V2
0V dc
V3
V1
10 Vd c 10 Vd c
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Forward Current Characteristic of Reverse Diode
Circuit Simulation Result
10A
1.0A
100mA
10mA
0.50V 0.75V 1.00V
I(V2)
V_V3
Evaluation Circuit
R1
0.0 1m
V2
0V dc
V3
0V dc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.001 0.504 0.504 0
0.002 0.524 0.523 -0.23855
0.005 0.546 0.546 0.03663
0.01 0.566 0.566 0
0.021 0.584 0.585 0.136986
0.052 0.61 0.61 -0.04918
0.099 0.626 0.627 0.223642
0.2 0.648 0.647 -0.15432
0.503 0.674 0.673 -0.11128
1.004 0.694 0.694 0
2 0.716 0.716 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
0.8us 1.2us 1.6us 2.0us 2.4us 2.8us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = {-9.4} V1
V2 = {10.7} U2
TD = 40n
TR = 10n
TF = 10n
PW = 1u
PER = 10u
0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 488 ns 489.5 ns 0.307
trb 244 ns 246 ns 0.820
trr 732 ns 735.5 ns 0.478
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15. Reverse Recovery Characteristic Reference
Trj=488(ns)
Trb=244(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005