The document is a device modeling report for a SiC Schottky Barrier Diode manufactured by ROHM. It contains the diode model parameters, simulation results of forward and reverse current characteristics, and junction capacitance characteristics. Circuit simulations match measurement data with less than 1% error for most test conditions.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: SCS230AE2HR
MANUFACTURER: ROHM
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
CASE
(1) (2) (3)
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
SCS230AE2HR
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V 2.5V
I(R1)
1.0mA
10mA
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.691 -1.29 0.01 0.750 0.750 0.00 0.1 0.810 0.813 0.37 1 0.900 0.903 0.33 2 0.950 0.953 0.32 5 1.070 1.072 0.19 10 1.250 1.243 -0.56 20 1.550 1.552 0.13

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V ( R )
10mV 100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
SCS230AE2HR
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph Circuit Simulation result
Comparison table
VR(V) Ct (pF) %Error Measurement Simulation 0.01 770.000 746.000 -3.12 0.1 720.000 747.000 3.75 1 540.000 533.000 -1.30 10 225.000 215.025 -4.43 20 163.000 155.500 -4.60 50 110.000 105.410 -4.17 100 82.000 82.300 0.37 200 64.500 67.550 4.73 500 55.000 56.000 1.82

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V _ V 1
0V 100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
V1 SCS230AE2HR
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (uA) VR (V) %Error Measurement Simulation 0.01 402.000 398.089 -0.97 0.1 488.000 487.778 -0.05 2 600.000 599.500 -0.08