This document provides a device modeling report for a SiC Schottky Barrier Diode with part number TRS12A65C. It includes the diode model parameters, simulation results for forward and reverse current characteristics, junction capacitance characteristics, and comparison data between measurement and simulation results with less than 5% error. Circuit simulations were performed to characterize the electrical behavior and validate the diode model.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS12A65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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R1
0.01m
V1
0Vdc
0
U1
TRS12A65C
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
0A
2A
4A
6A
8A
10A
12A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.960 0.948 -1.25 1 0.990 0.988 -0.20 2 1.044 1.050 0.57 5 1.200 1.207 0.58 10 1.450 1.446 -0.28 12 1.540 1.540 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V ( N 1 6 6 1 0 )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
V1
TD = 0
TF = 500ns
PW = 100us
PER = 500us
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
U1
TRS12A65C
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
VR (V) Cj (pF) %Error Measurement Simulation 0.1 670.00 651.00 -2.84 0.2 650.00 636.20 -2.12 0.5 600.00 596.70 -0.55 1 540.00 543.30 0.61 2 460.00 465.80 1.26 5 358.00 340.00 -5.03 10 263.00 250.50 -4.75 20 190.00 180.70 -4.89 50 125.00 121.10 -3.12 100 91.00 94.90 4.29 200 75.30 78.90 4.78 500 68.00 67.30 -1.03

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V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
V1
0Vdc
R1
100m
0
U1
TRS12A65C
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Comparison Graph Circuit Simulation result
Comparison table
IR (nA) VR (V) %Error Measurement Simulation 10 477.00 473.00 -0.84 100 580.00 579.50 -0.09 480 650.00 649.70 -0.05