This document provides a summary of simulation results for the electrical characteristics of a Toshiba TK65E10N1 MOSFET device, including: - Transconductance characteristics showing less than 1% error between measured and simulated values. - Vgs-Id, output, and Rds(on) characteristics with errors under 2%. - Gate charge, switching time, and body diode characteristics within 2% of measurements. - Reverse recovery characteristics of the body diode matching measurements to within 0.5% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK65E10N1
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 21.643 21.861 1.01
5 34.334 34.489 0.45
10 48.528 48.640 0.23
20 68.570 68.488 -0.12
50 107.699 107.426 -0.25
65 122.877 122.003 -0.71
VDS=10V

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V_VGS
0V 2.0V 4.0V 6.0V 8.0V
I(U1:2)
0A
10A
20A
30A
40A
50A
60A
VGS
U1
TK65E10N1
V1
10V
0
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 3.850 3.904 1.39
2 3.900 3.957 1.47
5 4.070 4.064 -0.16
10 4.215 4.184 -0.74
20 4.350 4.354 0.10
50 4.655 4.695 0.86
65 4.770 4.826 1.17
VDS=10V

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VGS
10V
0
V1
U1
TK65E10N1
V_V1
0V 20mV 40mV 60mV 80mV 100mV 120mV
I(U1:2)
0A
5A
10A
15A
20A
25A
30A
35A
Rds (on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=32.5(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 4.000 4.002 0.06

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V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(U1:2)
0A
50A
100A
150A
VGS
0
V1
U1
TK65E10N1
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 4.6V
8
4.8
7
10
5.2
5
5.4
5.65.86

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 3740.000 3732.620 -0.20
0.2 3700.000 3707.750 0.21
0.5 3620.000 3634.500 0.40
1 3520.000 3520.014 0.00
2 3335.000 3314.000 -0.63
5 2840.000 2837.156 -0.10
10 2315.000 2316.900 0.08
20 1720.000 1735.000 0.87
50 1060.000 1052.110 -0.74
100 679.000 676.970 -0.30
Simulation
Measurement

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Time*1mA
0 20n 40n 60n 80n 100n
V(W1:3)
0V
4V
8V
12V
16V
20V
D1
dmod ID
65A
VDD
80V
0
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
U1
TK65E10N1
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=80(V), VGS=10(V), ID=65(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 31.000 30.953 -0.15
Qgd nC 18.000 17.927 -0.41
Qg nC 81.000 80.836 -0.20

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Time
1.6us 1.8us 2.0us 2.2us 2.4us 2.6us
V(U1:2)/5 V(U1:1)
0V
5V
10V
15V
L1
30nH
1 2
U1
TK65E10N1
R2
4.7
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 20
VDD
50
0
RL
1.54
L2
50nH
12
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit1
Test condition: VDD=50(V), VGS=0/10(V), ID=32.5(A), RG=4.7, RL=1.54
Parameter Unit Measurement Simulation %Error
ton ns 44.000 43.887 -0.26

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(VDS)
100mA
1.0A
10A
100A
1.0KA
VDS
0
U1
TK65E10N1
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.551 0.565 2.56
0.2 0.585 0.591 0.95
0.5 0.634 0.624 -1.60
1 0.662 0.650 -1.81
2 0.682 0.676 -0.82
5 0.722 0.714 -1.07
10 0.750 0.747 -0.37
20 0.780 0.788 1.04
50 0.860 0.868 0.99
100 0.970 0.972 0.23
200 1.150 1.155 0.41
260 1.265 1.259 -0.51

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Time
1.7us 1.9us 2.1us 2.3us 2.5us 2.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
U1
DTK65E10N1_P
0
V1TD = 0ns
TF = 10ns
PW = 2us
PER = 200us
V1 = -9.4V
TR = 10ns
V2 = 10.6V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 22.800 22.726 -0.32
trb ns 168.000 167.268 -0.44
trr ns 190.800 189.994 -0.42

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Reverse Recovery Characteristics Reference
trj = 22.8(ns)
trb = 168(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement