This document contains a device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes the JFET model parameters, graphs comparing simulated and measured characteristics, and evaluation of the JFET model in circuit simulations.
FREE SPICE MODEL of DG1E60 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a SPICE model for the DTA123EE transistor from manufacturer ROHM. It includes the model parameters for the PNP bipolar junction transistor as well as simulation results comparing the transistor's ON and OFF characteristics and current gain to datasheet specifications with low errors. Circuit simulations were performed to analyze the input-output and output-voltage characteristics.
FREE SPICE MODEL of 1SS272 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the components, SPICE model, and performance characteristics of a Toshiba 10DL2C48A general purpose rectifier diode. It provides the diode's part number, manufacturer, and SPICE subcircuit model components and parameters. It also includes simulation results and comparisons to measurements for the diode's forward and reverse current characteristics, capacitance over reverse voltage, and reverse recovery time.
This document contains a SPICE model for the Toshiba 10DL2C41A general purpose rectifier diode. It includes the model parameters, simulation results comparing the model to measurements for forward and reverse characteristics, and an evaluation of the model accuracy. Simulation results match measurements well, within 5% for most data points.
This document contains a device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes the JFET model parameters, graphs comparing simulated and measured characteristics, and evaluation of the JFET model in circuit simulations.
FREE SPICE MODEL of DG1E60 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a SPICE model for the DTA123EE transistor from manufacturer ROHM. It includes the model parameters for the PNP bipolar junction transistor as well as simulation results comparing the transistor's ON and OFF characteristics and current gain to datasheet specifications with low errors. Circuit simulations were performed to analyze the input-output and output-voltage characteristics.
FREE SPICE MODEL of 1SS272 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J103(SM) (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document summarizes the components, SPICE model, and performance characteristics of a Toshiba 10DL2C48A general purpose rectifier diode. It provides the diode's part number, manufacturer, and SPICE subcircuit model components and parameters. It also includes simulation results and comparisons to measurements for the diode's forward and reverse current characteristics, capacitance over reverse voltage, and reverse recovery time.
This document contains a SPICE model for the Toshiba 10DL2C41A general purpose rectifier diode. It includes the model parameters, simulation results comparing the model to measurements for forward and reverse characteristics, and an evaluation of the model accuracy. Simulation results match measurements well, within 5% for most data points.
This document provides a SPICE model for the 20DL2C41A general purpose rectifier diode manufactured by Toshiba. It includes the SPICE subcircuit definition, model parameters with descriptions, and simulation results comparing the diode's forward and reverse characteristics to manufacturer measurements, showing good agreement within a few percent. Reverse recovery characteristics are also modeled and matched to measurements within a few nanoseconds.
This document contains a device modeling report for a TOSHIBA RN1418 transistor. It includes the SPICE model parameters for the transistor and simulation results showing:
1) The transistor's input voltage vs. output current characteristics (ON characteristics) with good agreement to the datasheet specifications.
2) The transistor's output current vs. input voltage characteristics (OFF characteristics) also matching well with datasheet values.
3) The transistor's DC current gain vs. output current follows expectations based on the datasheet.
4) The output voltage vs. output current simulation aligns closely with the transistor's datasheet saturation voltage specifications.
FREE SPICE MODEL of 10DL2CZ47A in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a SPICE model for the SF10LC40 diode manufactured by SHINDENGEN. It includes the model parameters for the DSF10LC40 subcircuit, graphs comparing the diode's measured and simulated forward and reverse characteristics, and simulation results showing good agreement between measurement and simulation.
FREE SPICE MODEL of CLH02 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
FREE SPICE MODEL of 1SS412 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SSM3K15AMFV (Standard Model) PSpice Model (Free SPICE Model)Tsuyoshi Horigome
This document provides a Spice model and characterization results for the MOSFET device SSM3K15AMFV manufactured by Toshiba. It includes:
1) A Spice model for the MOSFET and its internal body diode with parameters.
2) Simulation results characterizing the MOSFET's transconductance, Id-Vgs, Rds(on), output characteristics, and more.
3) Comparisons of the simulation results to manufacturer measurements showing good agreement.
4) Characterization of the internal body diode's forward and reverse recovery behavior.
This document summarizes the device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes parameters for the PSpice model, graphs comparing measurement and simulation results for transconductance, transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage characteristics. Good agreement is shown between measurements and simulations with errors generally below 5%.
This document summarizes the PSpice model for a Junction Field Effect Transistor (JFET) with part number 2N3819. It describes the model parameters, shows circuit simulations for the transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage. The simulations demonstrate good agreement with measurements, with most errors under 5%.
This document summarizes the PSpice model and simulation results for a Junction Field Effect Transistor (JFET) with part number SST270. It describes the device components and parameters, shows circuit schematics used in simulations, and provides comparison tables and graphs of measurement and simulation results for various device characteristics like transconductance, transfer curves, input and reverse transfer capacitances, and gate leakage currents. Close agreement is shown between measured and simulated device performance.
This document summarizes the PSpice model and simulation results for a Junction Field Effect Transistor (JFET) with part number SST5484. It includes the model parameters, graphs comparing measured and simulated transconductance, transfer curve, input and reverse transfer capacitances, and passive and active gate leakage. The simulations matched the measurements well with errors generally below 5%.
This document summarizes the PSpice model for a Junction Field Effect Transistor (JFET) with part number SST5485 manufactured by Vishay Siliconix. It includes descriptions of the model parameters and comparison graphs between the measured and simulated characteristics for transconductance, transfer curve, input capacitance, reverse transfer capacitance, passive gate leakage, and active gate leakage.
This document provides a SPICE model for the 20DL2C41A general purpose rectifier diode manufactured by Toshiba. It includes the SPICE subcircuit definition, model parameters with descriptions, and simulation results comparing the diode's forward and reverse characteristics to manufacturer measurements, showing good agreement within a few percent. Reverse recovery characteristics are also modeled and matched to measurements within a few nanoseconds.
This document contains a device modeling report for a TOSHIBA RN1418 transistor. It includes the SPICE model parameters for the transistor and simulation results showing:
1) The transistor's input voltage vs. output current characteristics (ON characteristics) with good agreement to the datasheet specifications.
2) The transistor's output current vs. input voltage characteristics (OFF characteristics) also matching well with datasheet values.
3) The transistor's DC current gain vs. output current follows expectations based on the datasheet.
4) The output voltage vs. output current simulation aligns closely with the transistor's datasheet saturation voltage specifications.
FREE SPICE MODEL of 10DL2CZ47A in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT25Q101 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
This document contains a SPICE model for the SF10LC40 diode manufactured by SHINDENGEN. It includes the model parameters for the DSF10LC40 subcircuit, graphs comparing the diode's measured and simulated forward and reverse characteristics, and simulation results showing good agreement between measurement and simulation.
FREE SPICE MODEL of CLH02 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
FREE SPICE MODEL of 1SS412 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SSM3K15AMFV (Standard Model) PSpice Model (Free SPICE Model)Tsuyoshi Horigome
This document provides a Spice model and characterization results for the MOSFET device SSM3K15AMFV manufactured by Toshiba. It includes:
1) A Spice model for the MOSFET and its internal body diode with parameters.
2) Simulation results characterizing the MOSFET's transconductance, Id-Vgs, Rds(on), output characteristics, and more.
3) Comparisons of the simulation results to manufacturer measurements showing good agreement.
4) Characterization of the internal body diode's forward and reverse recovery behavior.
This document summarizes the device modeling report for a Junction Field Effect Transistor (JFET) with part number 2N4416 manufactured by Vishay Siliconix. It includes parameters for the PSpice model, graphs comparing measurement and simulation results for transconductance, transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage characteristics. Good agreement is shown between measurements and simulations with errors generally below 5%.
This document summarizes the PSpice model for a Junction Field Effect Transistor (JFET) with part number 2N3819. It describes the model parameters, shows circuit simulations for the transfer curve, reverse transfer capacitance, input capacitance, and passive and active gate leakage. The simulations demonstrate good agreement with measurements, with most errors under 5%.
This document summarizes the PSpice model and simulation results for a Junction Field Effect Transistor (JFET) with part number SST270. It describes the device components and parameters, shows circuit schematics used in simulations, and provides comparison tables and graphs of measurement and simulation results for various device characteristics like transconductance, transfer curves, input and reverse transfer capacitances, and gate leakage currents. Close agreement is shown between measured and simulated device performance.
This document summarizes the PSpice model and simulation results for a Junction Field Effect Transistor (JFET) with part number SST5484. It includes the model parameters, graphs comparing measured and simulated transconductance, transfer curve, input and reverse transfer capacitances, and passive and active gate leakage. The simulations matched the measurements well with errors generally below 5%.
This document summarizes the PSpice model for a Junction Field Effect Transistor (JFET) with part number SST5485 manufactured by Vishay Siliconix. It includes descriptions of the model parameters and comparison graphs between the measured and simulated characteristics for transconductance, transfer curve, input capacitance, reverse transfer capacitance, passive gate leakage, and active gate leakage.
SPICE MODEL of 2SK3770-01MR (Professional+BDP Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3770-01MR (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2920 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2920 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3770-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK3561 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK3561 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of EP05Q04 (Standard Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of EP05Q04 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of 2SK2989 (Standard+BDS Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of 2SK2989 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of GSQ05A06 (Standard Model) in SPICE PARKTsuyoshi Horigome
SPICE MODEL of GSQ05A06 (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Similar to SPICE MODEL of 2N4416A in SPICE PARK (20)
Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)Tsuyoshi Horigome
This document provides an inventory update of 6,747 parts at Spice Park as of April 2024. It lists the part numbers, manufacturers, and quantities of various semiconductor components, including 1,697 Schottky rectifier diodes from 29 different manufacturers. It also includes details on passive components, batteries, mechanical parts, motors, and lamps in the inventory.
The document provides an inventory update from April 2024 of the Spice Park collection which contains 6,747 electronic components. It includes tables listing the types of semiconductor components, passive parts, batteries, mechanical parts, motors, and lamps in the collection along with their manufacturer and quantities. One of the semiconductor components, the general purpose rectifier diode, is broken down into a more detailed table with 116 entries providing part numbers, manufacturers, thermal ratings, and remarks.
Update 31 models(Diode/General ) in SPICE PARK(MAR2024)Tsuyoshi Horigome
The document provides an inventory update from March 2024 of parts in the Spice Park warehouse. It lists 6,725 total parts across various categories including semiconductors, passive parts, batteries, mechanical parts, motors, and lamps. The semiconductor section lists 652 general purpose rectifier diodes from 18 different manufacturers with quantities ranging from 2 to 145 pieces.
This document provides an inventory list of parts at Spice Park as of March 2024. It contains 3 sections - Semiconductor parts (diodes, transistors, ICs etc.), Passive parts (capacitors, resistors etc.), and Battery parts. For Semiconductor parts, it lists 36 different part types and provides the quantity of each part. It then provides further details of Diode/General Purpose Rectifiers, listing the manufacturer and quantity of 652 individual part numbers.
Update 29 models(Solar cell) in SPICE PARK(FEB2024)Tsuyoshi Horigome
The document provides an inventory update from February 2024 of Spice Park, which contains 6,694 total pieces of electronic components and parts. It lists 36 categories of semiconductor devices, 11 categories of passive parts, 10 types of batteries, 5 mechanical parts, DC motors, lamps, and power supplies. It provides the most detailed listing for solar cells, with 1,003 total pieces from 51 manufacturers listed with part numbers.
The document provides an inventory update from February 2024 of Spice Park, which contains 6,694 electronic components. It lists the components by type (e.g. semiconductor), part number, manufacturer, thermal rating, and quantity on hand. For example, it shows that there are 621 general purpose rectifier diodes from manufacturers such as Fairchild, Fuji, Intersil, Rohm, Shindengen, and Toshiba. The detailed four-page section provides further information on the first item, general purpose rectifier diodes, including 152 individual part numbers and specifications.
This document discusses circuit simulations using LTspice. It describes driving a circuit simulation by inserting a 250 ohm resistor between the output terminals. It also describes simulating a 1 channel bridge circuit where the DUT1 and DUT2 resistors are both set to 100 ohms and the input voltage is set to either 1V or 5V.
This document discusses parametric sweeps of external and internal resistance values Rg for circuit simulation in LTspice. It also references outputting a waveform similar to a report on fall time characteristics for a device modeling report with customer Samsung.
Essentials of Automations: The Art of Triggers and Actions in FMESafe Software
In this second installment of our Essentials of Automations webinar series, we’ll explore the landscape of triggers and actions, guiding you through the nuances of authoring and adapting workspaces for seamless automations. Gain an understanding of the full spectrum of triggers and actions available in FME, empowering you to enhance your workspaces for efficient automation.
We’ll kick things off by showcasing the most commonly used event-based triggers, introducing you to various automation workflows like manual triggers, schedules, directory watchers, and more. Plus, see how these elements play out in real scenarios.
Whether you’re tweaking your current setup or building from the ground up, this session will arm you with the tools and insights needed to transform your FME usage into a powerhouse of productivity. Join us to discover effective strategies that simplify complex processes, enhancing your productivity and transforming your data management practices with FME. Let’s turn complexity into clarity and make your workspaces work wonders!
AI 101: An Introduction to the Basics and Impact of Artificial IntelligenceIndexBug
Imagine a world where machines not only perform tasks but also learn, adapt, and make decisions. This is the promise of Artificial Intelligence (AI), a technology that's not just enhancing our lives but revolutionizing entire industries.
Driving Business Innovation: Latest Generative AI Advancements & Success StorySafe Software
Are you ready to revolutionize how you handle data? Join us for a webinar where we’ll bring you up to speed with the latest advancements in Generative AI technology and discover how leveraging FME with tools from giants like Google Gemini, Amazon, and Microsoft OpenAI can supercharge your workflow efficiency.
During the hour, we’ll take you through:
Guest Speaker Segment with Hannah Barrington: Dive into the world of dynamic real estate marketing with Hannah, the Marketing Manager at Workspace Group. Hear firsthand how their team generates engaging descriptions for thousands of office units by integrating diverse data sources—from PDF floorplans to web pages—using FME transformers, like OpenAIVisionConnector and AnthropicVisionConnector. This use case will show you how GenAI can streamline content creation for marketing across the board.
Ollama Use Case: Learn how Scenario Specialist Dmitri Bagh has utilized Ollama within FME to input data, create custom models, and enhance security protocols. This segment will include demos to illustrate the full capabilities of FME in AI-driven processes.
Custom AI Models: Discover how to leverage FME to build personalized AI models using your data. Whether it’s populating a model with local data for added security or integrating public AI tools, find out how FME facilitates a versatile and secure approach to AI.
We’ll wrap up with a live Q&A session where you can engage with our experts on your specific use cases, and learn more about optimizing your data workflows with AI.
This webinar is ideal for professionals seeking to harness the power of AI within their data management systems while ensuring high levels of customization and security. Whether you're a novice or an expert, gain actionable insights and strategies to elevate your data processes. Join us to see how FME and AI can revolutionize how you work with data!
Goodbye Windows 11: Make Way for Nitrux Linux 3.5.0!SOFTTECHHUB
As the digital landscape continually evolves, operating systems play a critical role in shaping user experiences and productivity. The launch of Nitrux Linux 3.5.0 marks a significant milestone, offering a robust alternative to traditional systems such as Windows 11. This article delves into the essence of Nitrux Linux 3.5.0, exploring its unique features, advantages, and how it stands as a compelling choice for both casual users and tech enthusiasts.
In his public lecture, Christian Timmerer provides insights into the fascinating history of video streaming, starting from its humble beginnings before YouTube to the groundbreaking technologies that now dominate platforms like Netflix and ORF ON. Timmerer also presents provocative contributions of his own that have significantly influenced the industry. He concludes by looking at future challenges and invites the audience to join in a discussion.
UiPath Test Automation using UiPath Test Suite series, part 5DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 5. In this session, we will cover CI/CD with devops.
Topics covered:
CI/CD with in UiPath
End-to-end overview of CI/CD pipeline with Azure devops
Speaker:
Lyndsey Byblow, Test Suite Sales Engineer @ UiPath, Inc.
“An Outlook of the Ongoing and Future Relationship between Blockchain Technologies and Process-aware Information Systems.” Invited talk at the joint workshop on Blockchain for Information Systems (BC4IS) and Blockchain for Trusted Data Sharing (B4TDS), co-located with with the 36th International Conference on Advanced Information Systems Engineering (CAiSE), 3 June 2024, Limassol, Cyprus.
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
Building Production Ready Search Pipelines with Spark and MilvusZilliz
Spark is the widely used ETL tool for processing, indexing and ingesting data to serving stack for search. Milvus is the production-ready open-source vector database. In this talk we will show how to use Spark to process unstructured data to extract vector representations, and push the vectors to Milvus vector database for search serving.
Unlocking Productivity: Leveraging the Potential of Copilot in Microsoft 365, a presentation by Christoforos Vlachos, Senior Solutions Manager – Modern Workplace, Uni Systems
Sudheer Mechineni, Head of Application Frameworks, Standard Chartered Bank
Discover how Standard Chartered Bank harnessed the power of Neo4j to transform complex data access challenges into a dynamic, scalable graph database solution. This keynote will cover their journey from initial adoption to deploying a fully automated, enterprise-grade causal cluster, highlighting key strategies for modelling organisational changes and ensuring robust disaster recovery. Learn how these innovations have not only enhanced Standard Chartered Bank’s data infrastructure but also positioned them as pioneers in the banking sector’s adoption of graph technology.
Programming Foundation Models with DSPy - Meetup SlidesZilliz
Prompting language models is hard, while programming language models is easy. In this talk, I will discuss the state-of-the-art framework DSPy for programming foundation models with its powerful optimizers and runtime constraint system.
GraphSummit Singapore | The Art of the Possible with Graph - Q2 2024Neo4j
Neha Bajwa, Vice President of Product Marketing, Neo4j
Join us as we explore breakthrough innovations enabled by interconnected data and AI. Discover firsthand how organizations use relationships in data to uncover contextual insights and solve our most pressing challenges – from optimizing supply chains, detecting fraud, and improving customer experiences to accelerating drug discoveries.
Pushing the limits of ePRTC: 100ns holdover for 100 daysAdtran
At WSTS 2024, Alon Stern explored the topic of parametric holdover and explained how recent research findings can be implemented in real-world PNT networks to achieve 100 nanoseconds of accuracy for up to 100 days.
Let's Integrate MuleSoft RPA, COMPOSER, APM with AWS IDP along with Slackshyamraj55
Discover the seamless integration of RPA (Robotic Process Automation), COMPOSER, and APM with AWS IDP enhanced with Slack notifications. Explore how these technologies converge to streamline workflows, optimize performance, and ensure secure access, all while leveraging the power of AWS IDP and real-time communication via Slack notifications.
GraphRAG for Life Science to increase LLM accuracyTomaz Bratanic
GraphRAG for life science domain, where you retriever information from biomedical knowledge graphs using LLMs to increase the accuracy and performance of generated answers
GraphRAG for Life Science to increase LLM accuracy
SPICE MODEL of 2N4416A in SPICE PARK
1. Device Modeling Report
COMPONENTS: Junction Field Effect Transistor (JFET)
PART NUMBER: 2N4416A
MANUFACTURER: Vishay Siliconix
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
2. PSpice model
Model description
parameter
BETA Transconductance coefficient
RD Drain resistance
RS Source resistance
BETATCE Temperature coefficient for BETA
LAMBDA Channel-length modulation
VTO Threshold voltage
VTOTC Temperature coefficient for VTO
CGD Zero-bias gate-drain capacitance
M Junction grading factor
PB Built-in potential
FC Forward-bias coefficient
CGS Zero-bias gate-source capacitance
ISR Recombination current saturation value
NR Recombination current emission coefficient
IS Junction saturation current
N Junction emission coefficient
XTI IS temperature coefficient
ALPHA Impact ionization coefficient
VK Ionization “knee” voltage
KF Flicker noise coefficient
AF Flicker noise exponent
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
4. Transfer Curve Characteristic
Circuit Simulation Result
Evaluation Circuit
Q2
2N4416A
10Vdc V1
0Vdc V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS (V)
ID (mA) Error (%)
Measurement Simulation
8.6 -0.3 -0.31 -3.333
7.1 -0.6 -0.60127 -0.211
5.6 -0.9 -0.873302 -2.966
4.2 -1.2 -1.169 -2.583
3 -1.5 -1.4467 -3.553
2.1 -1.75 -1.7 -2.857
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
6. Reverse Transfer Capacitance
Circuit Simulation Result
Evaluation Circuit
V1 = 0 V1 V2
V2 = 20 0Vdc
TD = 0
TR = 10n
TF = 10n
PW = 5u
PER = 10u
Q1
2N4416A
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
7. Comparison Graph
Circuit Simulation Result
Simulation Result
Crss (pF)
VGS (V) Error(%)
Measurement Simulation
-1 1.55 1.62 4.516
-2 1.33 1.36 2.255
-5 1.05 1.0715 2.047
-10 0.9 0.89 1.111
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
8. Input Capacitance
Circuit Simulation Result
Evaluation Circuit
V1 = 0 V1
V2 = 20
TD = 0
TR = 10n
TF = 10n
PW = 5u
PER = 10u V2
Q1
2N4416A
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
9. Comparison Graph
Circuit Simulation Result
Simulation Result
Crss (pF)
VGS (V) Error(%)
Measurement Simulation
-1 3.1 3.2433 4.622
-2 2.6 2.73 5
-5 2 2.1 5
-10 1.7 1.7819 4.817
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
10. Passive Gate Leakage
Circuit Simulation Result
Evaluation Circuit
Q1 V2
2N4416A 0Vdc
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
11. Comparison Graph
Circuit Simulation Result
Simulation Result
Igss (pA)
VDS (V) Error(%)
Measurement Simulation
1 0.6 0.615 2.5
2 0.9 0.877 2.555
5 1.1 1.1052 0.472
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
12. Active Gate Leakage
Circuit Simulation Result
Evaluation Circuit
Q1
2N4416A
V1 V2
-2.01Vdc 0Vdc
0
VDG=10V,ID=1mA IG (pA)
Error(%)
(Test Conditions) Measurement Simulation
Gate Operating
-20 -20.5 2.5
Current(IG)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004