Photodiode and Photodetectors.pptx

Absorption and Direct and Indirect Transitions
(a) Photon absorption in a direct bandgap semiconductor. (b) Photon absorption
in an indirect bandgap semiconductor (VB, valence band; CB, conduction band)

)
eV
(
24
.
1
)
μm
(
g
g
E


Absorption and the Bandgap
Absorption cutoff wavelength
Bandgap in eV
Wavelength in
microns
(micrometers)
Wavelengths greater than roughly g are not absorbed (by band-to band transitions)

Absorption Coefficient a
I(x) = Ioexp(–ax)
d = 1/a = penetration or absorption depth

Indirect Bandgap Semiconductors
hkCB – hkVB = Phonon momentum
= hK
Photon energy absorbed
hu = Eg  h
Phonon frequency
Photon energy absorbed, hu = Eg  h
Phonon energy, small e.g. less than 0.1 eV

Semiconductors
Semiconductor Eg (eV) g (eV) Type
InP 1.35 0.91 D
GaAs0.88Sb0.12 1.15 1.08 D
Si 1.12 1.11 I
In0.7Ga0.3As0.64P0.36 0.89 1.4 D
In0.53Ga0.47As 0.75 1.65 D
Ge 0.66 1.87 I
InAs 0.35 3.5 D
InSb 0.18 7 D
Band gap energy Eg at 300 K, cut-off wavelength g and type of bandgap (D = Direct and I = Indirect) for
some photodetector materials

photons
incident
of
Number
collected
and
generated
EHP
free
of
Number

e

External quantum efficiency (QE) e of the detector
u

h
P
e
I
o
ph
e
/
/


Responsivity R
o
ph
P
I


(W)
Power
Optical
Incident
(A)
nt
Photocurre
R
hc
e
h
e
e
e


u
 

R

Responsivity R
Si photodiodes of various sizes
(S1336 series). (Courtesy of
Hamamatsu)

EXAMPLE: Quantum efficiency and responsivity
Consider the photodiode shown in Figure 5.7. What is the QE at peak responsivity? What is the QE at 450 nm (blue)? If the photosensitive
device area is 1 mm2, what would be the light intensity corresponding to a photocurrent of 10 nA at the peak responsivity?
Solution
The peak responsibility in Figure 5.7 occurs at about  
940 nm where R  0.56 A W-1. Thus, from Eq. (5.4.4), that
is R =ee / hc, we have
i.e. e = 0.74 or 74%
We can repeat the calculation for  = 450 nm, where R 
0.24 AW-1, which gives e = 0.66 or 66%.
From the definition of responsivity, R = Iph /Po, we have
0.56 AW-1 = (10×10-9 A)/Po, i.e. Po = 1.8×10-8 W or 18 nW.
Since the area is 1 mm2 the intensity must be 18 nW mm-2.
19 9
1
34 8 -1
(1.6 10 C)(940 10 m)
0.56AW
(6.63 10 J s )(3 10 m s )
e

 


 

 

External Quantum Efficiency and Responsivity
Different contributions to the photocurrent Iph. Photogeneration profiles corresponding to short, medium and long
wavelengths are also shown.
Schematic
photogeneration
profiles

Internal Quantum Efficiency i
photons
absorbed
of
Number
ated
photogener
EHP
of
Number
y
Efficienc
Quantum
Internal 

i

Assuming lp is very thin, and assuming W
>> Lh
)]
exp(
1
[
)
0
(
W
h
P
e
I o
i
ph a
u




T
T = Transmission coefficient of AR coating
a = Absorption coefficient

The simple pn junction has two drawback.
1. Its junction or depletion layer capacitance is not
sufficiently to allow photodetection at high
modulation frequencies
2. Its depletion is at most a few microns
– At long wavelength, the penetration depth is greater than
the depletion layer width where there is no field to separate
the EHPs & drift them
– QE is correspondingly low at these long wavelengths
• These problems are substantially reduced in the pin
photodiode.

pin photodiode
• pin refers to a device that has the structure p+-intrinsic-n+ as
illustrated in fig.
• In the idealized pin diode, the i-Si region is truly intrinsic
– It is much wider than p+ & n+ regions (5-50m)
• When the structure is first formed,
– Holes diffuse from the p+-side and electrons from n+-side into the i-Si
layer
where they recombine and disappear.
– This leaves a thin layer of negatively charged acceptor ions in the p+-
side and positively donor ions in the n+-side.
– The two charges are separated by the i-Si layer of thickness W
• There is a uniform built-in field Eo in i-Si layer from the
exposed positive ions to exposed negative ions

p+
i-Si n+
SiO2
Electrode
–
eNa
net
eNd
(b)
x
(a)
(a) The schematic structure
of an idealized pin photodiode
(b) The net space charge
density across the
photodiode.
Electrode
pin photodiode

x
E(x)
R
Eo
E
h+
e–
Iph
hγ >E g
W
(c)
(d)
Vr
Vout
pin photodiode
(c) The built-in field across the diode.
(d) The pin photodiode in photo
detection is reverse biased.

pin Photodiode
(a)The schematic structure of an idealized pin
photodiode
(b) The net space charge density across the
photodiode.
(c) The built-in field across the diode.
(d) The pin photodiode reverse biased for
photodetection.
Si pin
InGaAs pin
Courtesy of Hamamatsu

pin Photodiode
W
V
W
V r
r
o 

 E
E
W
A
C r
o


dep
d
W
t
v

drift

Depletion Layer Capacitance
• The separation of two very thin layers of negative and positive charges
by a fixed distance, width W of the i-Si, is the same as that in a parallel
plate capacitor
• The junction depletion or depletion layer capacitance of the pin diode
is given by
where A is the cross sectional area and or is the permittivity of the semiconductor (Si)
• Since W is fixed by the structure, the junction capacitance does not depend on
applied voltage
• Cdep is typically of the order of a pF in fast pin photodiodes so that a 50 resistor, the
RCdep time constantis about 50 ps.
W

or A
Cdep

Reverse bias
• When a reverse bias voltage Vr is applied across the pin
device, it drops almost entirely across the width of i-Si
layer.
– The depletion widths in the p+ and n+ sides are negligible
compared width W
– The reverse bias increases the built-in voltage to Vo+Vr.
– The field E in the i-Si layer is still uniform and increase to
Vr Vo 
 Vr

Vr
W W
E  E o

Response time
• The pin structure is designed so that photon absorption
occurs over the i-Si layer
– The photogenerated EHPs are then separated by the field E and drifted
towards the n+ and p+ sides respectively.
• While the photogenerated carriers are drifting through the i-Si
layer they give rise to an external photocurrent
– which is detected as a voltage across a small resistor R
• The response time of the pin diode is determined by the
transit time of the carriers across the width W.
– Increasing W allows more photons to be absorbed which increases the
QE but it slow down the speed of response
– because carrier transit time become longer

Transit time of carrier
• For a charge carrier that is photogenerated at the
edge on the i-Si, the transit time or drift time tdrift
across the i-Si layer is
• To reduce the drift time, that is increase the speed of
response,
– we have to increase vd and therefore increase the applied
field E.
d
where v is its drift velocity
d
drift
v
t 
W
,

Drift velocity vs electric field in Si
• Fig. shows the variation of the drift velocity of electrons and
holes with the field in Si
• The dE behavior is only observed at low field
– Where d is the drift mobility
• At high field, vd does not follow the expected dE behavior
– both velocities tend to saturate at vsat which is of the order of 105ms–1
at field greater than 106Vm–1
• For an i-Si layer of width 10m, with carriers drifting as
saturation velocities, the drift time is about 0.1ns which is
longer than RCdep time constant
– The speed of pin diodes are invariably limited by the transit time

Drift velocity vs. electric field for holes and electrons in Si.
d
W
t
v

drift
Width of i-region
(Depletion region)
Drift velocity
Transit time
(Drift time)
Drift velocity vs electric field in Si

Example:
Operation and speed of a pin photodiode
• A Si pin photodiode has an i-Si layer of width 20m.
The p+ layer on the illumination side is very thin
0.1m. The pin is reverse biased by a voltage of 100V
and then illuminated with a very short optical pulse of
wavelength 900nm. What is the duration of the
photocurrent if absorption occurs over the whole i-Si
layer?

Solution
• The absorption coefficient at 900nm is ~3104m–1 so that the absorption depth is
~33m. We assume that absorption and hence photogeneration occurs over the
entire width W of the i-Si layer. The field in the Si layer is
E  Vr/W = (100V)/(2010–6m) = 5106Vm–1
• At this field the electron drift velocity ve is very near its saturation at 105ms–1, whereas
the hole drift velocity vh is about 7104ms–1. Holes are slightly slower than the
electrons. The transit time th of holes across the i-Si layer is
th  W/vh = (2010–6m)/(7104ms–1) = 2.8610–10s
• This is the response time of the pin as determined by the transit time of the slowest
carriers, holes, across the i-Si layer. To improve the response time the width of
the i-Si layer has to be narrowed but this decreases the quantity of absorbed
photons and hence reduces the responsivity. There is therefore a trade off between
speed and responsitivity.

Example:
Responsivity of a pin photodiode
• A Si pin photodiode has an active light receiving
area of diameter 0.4mm. When radiation of
wavelength 700nm (red light) and intensity
0.1mWcm–2 is incident, it generates a photocurrent
of 56.6nA. What is responsivity and QE of the
photodiode at 700nm?

Solution
TheQE can be foundfrom
The responsivityis
The incident light intensity I  0.1mWcm-2
means that theincidentpower for conversionis
0.80 80%
1.61019
C700109
m
1
6.621034
Js3108
ms1

0.45AW
hc
 
  R
e
1
9 7
56.610 A/1.2610 W 0.45AW
R  I / P  
ph o
2 3 2 7
0.02cm 
110 Wcm 1.2610 W
o
P  AI  

pin Photodiode Speed
A reverse biased pin photodiode is illuminated
with a short wavelength light pulse that is
absorbed very near the surface. The
photogenerated electron has to diffuse to the
depletion region where it is swept into the i-
layer and drifted across.
In time t, an electron, on average, diffuses a distance l given by
l = (2Det)1/2
Electron diffusion coefficient

pin Photodiode
The responsivity of Si, InGaAs and Ge pin type photodiodes. The pn junction GaP detector is used for UV detection. GaP (Thorlabs,
FGAP71), Si(E), IR enhanced Si (Hamamatsu S11499), Si(C), conventional Si with UV enhancement, InGaAs (Hamamatsu, G8376),
and Ge (Thorlabs, FDG03). The dashed lines represent the responsivity due to QE = 100 %, 75% and 50 %.

Responsivity R depends on the device structure
Two Si pin
photodiodes with
different device
structures.
A has UV
response

Responsivity R depends on the temperature
Responsivity of an InAs
photodiode at two temperatures

EXAMPLE: Responsivity of a pin photodiode
A Si pin photodiode has an active light receiving area of diameter 0.4 mm. When radiation of
wavelength 700 nm (red light) and intensity 0.1 mW cm-2 is incident, it generates a photocurrent of
56.6 nA. What is the responsivity and external QE of the photodiode at 700 nm?
Solution
The incident light intensity I = 0.1 mW cm-2 means that the incident power for
conversion is
Po = AI = [(0.02 cm)2](0.110-3 W cm-2) = 1.2610-7 W or 0.126 W.
The responsivity is
R = Iph /Po = (56.6  10-9 A)/(1.2610-7 W ) = 0.45 A W-1
The QE can be found from
%
80







 

80
.
0
m)
10
C)(700
10
(1.6
)
s
m
10
s)(3
J
10
(6.62
)
W
A
45
.
0
( 9
19
-1
8
-34
1
-


e
hc
R

EXAMPLE: Operation and speed of a pin photodiode
A Si pin photodiode has an i-Si layer of width 20 m. The p+-layer on the illumination side is very thin
(0.1 m). The pin is reverse biased by a voltage of 100 V and then illuminated with a very short optical
pulse of wavelength 900 nm. What is the duration of the photocurrent if absorption occurs over the
whole i-Si layer?
Solution
From Figure 5.5 , the absorption
coefficient at 900 nm is ~ 3104 m-1 so
that the absorption depth is ~33 m.
We can assume that absorption and
hence photogeneration occurs over
the entire width W of the i-Si layer.
The field in the i-Si layer is
E  Vr / W
= (100 V)/(2010-6 m)
= 5106 V m-1
Note: The absorption coefficient is between 3104 m-1 and 4104 m-1

At this field the electron drift velocity ve is very near its saturation at 105 m s-1,
whereas the hole drift velocity vh,  7104 m s-1 as shown in Figure 5.10.
Holes are slightly slower than the electrons. The transit time th of holes across
the i-Si layer is
th = W/vh = (2010-6 m)/(7104 m s-1)
= 2.8610-10 s or 0.29 ns
This is the response time of the pin as determined by the transit time of the
slowest carriers, holes, across the i-Si layer. To improve the response time,
the width of the i-Si layer has to be narrowed but this decreases the quantity
of photons absorbed and hence reduces the responsivity. There is therefore a
trade off between speed and responsivity.
EXAMPLE: Operation and speed of a pin photodiode
Solution (continued)

EXAMPLE : Photocarrier Diffusion in a pin photodiode
A reverse biased pin photodiode is illuminated with a short wavelength light pulse that is absorbed very
near the surface. The photogenerated electron has to diffuse to the depletion region where it is swept
into the i-layer and drifted across by the field in this region. What is the speed of response of this
photodiode if the i-Si layer is 20 m and the p+-layer is 1 m and the applied voltage is 60 V? The
diffusion coefficient (De) of electrons in the heavily doped p+-region is approximately 310-4 m2 s-1.
Solution
There is no electric field in the p+-side outside
the depletion region as shown in Figure 5.12 .
The photogenerated electrons have to make it
across to the n+-side to give rise to a
photocurrent. In the p+-side, the electrons
move by diffusion. In time t, an electron, on
average, diffuses a distance l given by
l = [2Det]1/2
The diffusion time tdiff is the time it takes for an
electron to diffuse across the p+-side (of length
l ) to reach the depletion layer and is given by

EXAMPLE: Photocarrier Diffusion in a pin photodiode
tdiff = l 2/(2De) = (110-6 m)2 / [2(310-4 m2 s-1)] = 1.6710-9 s or 1.67 ns.
On the other hand, once the electron reaches the depletion region, it
becomes drifted across the width W of the i-Si layer at the saturation drift
velocity since the electric field here is E = Vr / W = 60 V / 20 m = 3106 V m-
1; and at this field the electron drift velocity ve saturates at 105 m s-1. The drift
time across the i-Si layer is
tdrift = W / ve = (2010-6 m) / (1105 m s-1) = 2.010-10 s or 0.2 ns.
Thus, the response time of the pin to a pulse of short wavelength
radiation that is absorbed near the surface is very roughly tdiff + tdrift or 1.87
ns. Notice that the diffusion of the electron is much slower than its drift. In a
proper analysis, we have to consider the diffusion and drift of many carriers,
and we have to average (tdiff + tdrift) for all the electrons.

EXAMPLE: Steady state photocurrent in the pin photodiode
Consider a pin photodiode that is reverse biased and illuminated, as in Figure 5.9,
and operating under steady state conditions.
Assume that the photogeneration takes place inside the depletion layer of width
W, and the neutral p-side is very narrow.
If the incident optical power on the semiconductor is Po(0), then TPo(0) will be
transmitted, where T is the transmission coefficient.
At a distance x from the surface, the optical power Po(x) = TPo(0)exp(ax).
In a small volume dx at x, the absorbed radiation power (by the definition of a) is
aPo(x)dx, and the number of photons absorbed per second is aPo(x)dx /hu.
Of these absorbed photons, only a fraction i will photogenerate EHPs, where i is
the internal quantum efficiency IQE.
Thus, iaPo(x)dx /hu number of EHPs will be generated per second.

We assume these will drift through the depletion region and thereby contribute to the
photocurrent. The current contribution d Iph from absorption and photogeneration at x
within the SCL will thus be
We can integrate this from x = 0 (assuming lp is very thin) to the end of x = W, and
assuming W >> Lh to find
Steady state photocurrent pin photodiode (5.5.4)
where the approximate sign embeds the many assumptions we made in deriving Eq. (5.5.4).
Consider a pin photodiode without an AR coating so that T = 0.68. Assume i = 1. The SCL
width is 20 m. If the device is to be used at 900 nm, what would be the photocurrent if the
incident radiation power is 100 nW? What is the responsivity? Find the photocurrent and
the responsivity if a perfect AR coating is used. What is the primary limiting factor? What is
the responsivity if W = 40 µm?
x
x
h
P
e
h
x
x
P
e
δI o
i
o
i
ph d
a
u
a

u
d
a

)
exp(
)
0
(
)
(



T
)]
exp(
1
[
)
0
(
W
h
P
e
I o
i
ph a
u




T

From Figure 5.5, at  = 900 nm, a  3 ×104 m-1. Further for  =0.90 m, the photon
energy hu = 1.24 / 0.90 = 1.38 eV. Given Po(0) = 100 nW, we have
= 22 nA
and the responsivity R = 22 nA / 100 nW = 0.22 A W-1, which is on the low-side.
Consider next, a perfect AR coating so that T = 1, and using Eq. (5.5.4) again, we find
Iph = 32.7 nA and R = 0.33 A W-1, a significant improvement.
The factor [1exp(aW)] is only 0.451, and can be significantly improved by making
the SCL thicker. Setting W = 40 m, gives [1exp(aW)] = 0.70 and R = 0.51, which is
close to values for commercial devices.
The maximum theoretical photocurrent would be obtained by setting exp(aW)  0, T
= 1, i = 1, which gives Iph = 73 nA and R = 0.73 A W-1.
)]
10
20
10
3
exp(
1
[
)
10
6
.
1
38
.
1
(
)
10
100
)(
68
.
0
)(
1
)(
10
6
.
1
( 6
4
19
9
19














ph
I

Avalanche Photodiode (APD)
• APDs are widely used in optical communications due to their
high speed and internal gain.
• The n+ side is thin and it is the side that is illuminated through
a window.
• There are three p-type layers of different doping levels
next to n+ layer to suitably modify the field distribution
across the diode
– The first is a thin p-type layer
– The second is a thick lightly p-type doped -layer
– The third is a heavily doped p+ layer

p+
SiO2
Electrode
net
x
E(x)
R
E
hu >E g
p
Iph
e–

h+
(a)
(b)
(c)
x
Absorption
region
Avalanche
region
Electrode
n+
Avalanche Photodiode
(a) A schematic illustration of the
structure of an avalanche
photodiode (APD) biased
for avalanche gain. (b) The net
space charge density across the
photodiode. (c) The
field across the diode and the
identification of absorption and
multiplication regions.

Reverse bias
• The diode is reverse biased to increase the fields in the
depletion regions
• Under zero bias, the depletion layer in the p-region does
not normally extend across this layer to the - layer.
• But when a sufficient reverse bias is applied, the
depletion region in the p-layer widens to reach-
through to the -layer
– The field extends from the exposed positively charged donors
in the thin depletion layer in n+ side, all the way to the exposed
negatively charged acceptors in the thin depletion layer in p+-
side.

Electric field
• The electric field is given by the integration of the net
space charge density net across the diode is shown in
Fig.
• The field lines start at positive ions and end at
negative ions, which exist through the p,  & p+ layers.
–It is maximum at n+p junction, then decreases slowly
through the p layer.
–Through the -layer, it decreases slightly as the net space
charge here is small
–The field vanishes at the end of the narrow depletion layer
in the p+ side.

Avalanche of impact ionization processes
• The absorption of photons and photogeneration mainly occur in the
long -layer.
– The nearly uniform field here separates the EHPs and drifts them at velocities
near saturation towards the n+ and p+ sides respectively.
• When the drifting electrons reach p-layer, they experience
even greater fields
– therefore acquire sufficient kinetic energy (>Eg) to impact-ionize some of the Si
covalent bonds and release EHPs.
– These generated EHPs also be accelerated by the high fields to sufficiently
large kinetic energies to further cause impact ionization and release more
EHPs
– It leads to an avalanche of impact ionization processes.
– Thus, a single electron entering the p-layer can generate a large number of
EHPs, which contribute to observed photocurrent.

(a) A pictorial view of impact ionization processes releasing EHPs and
the resulting avalanche multiplication.
(b) Impact of an energetic conduction electron with crystal vibrations
transfers the electron's kinetic energy to a valence electron and
thereby excites it to the conduction band.
E
š
n+
p
h+
e–
Avalanche region
(a)
e–
h+
Ec
Ev
(b)
E
Avalanche of impact ionization processes

Internal gain mechanism
• A single photon absorption leads to a large number of EHPs
generated called internal gain mechanism
• The photocurrent with the presence of avalanche
multiplication
– can has an effective quantum efficiency in excess of unity
• The reason for keeping the photogeneration within -region and
reasonably separated from the avalanche p-region is that
– Avalanche multiplication is a statistical process and hence leads to
carrier generation fluctuation, which leads to excess noise in the
avalanche multiplied photocurrent.
– This is minimized if impact ionization is restricted to the carrier with the
highest impact ionization efficiency which is the electron.

Avalanche multiplication factor
whereIph is the APD photocurrent that has been multiplied and I pho is the primary
or unmultiplied photocurrent that is measured in the absenceof multiplication
(under small reversebias Vr )
The overall avalanchemultiplication factorM of an APD is defined as,
Ipho
Primaryunmultiplied photocurrent
Multiplied photocurrent

Iph
M 

M function
• The multiplication of carriers in the avalanche
region depends on the probability of impact
ionization,
– which depends strongly on the field in this region
and hence on the reverse bias Vr
• The multiplication M is a strong function of the
reverse bias and also the temperature
• For Si APDs, M values can be as high as 100, but
for many commercial Ge APDs, M are typically
around 10.

Empirical avalanche multiplication factor
Where
Vbr is a parameter called the avalanche breakdown voltage
n is a characteristic index that provides the best fit to the
experimental data
Vbr and n are strongly temperature dependent
Empirical expression
m
r
V
V
M










br
1
1

Avalanche Photodiode Gain or Multiplication M
Ionization coefficient ratio
αe = Aexp(-B/E) Chyoweth's law

Avalanche Photodiode Gain or Multiplication M
M = exp(aew)
Ionization coefficient
k
w
k
k
M
e 




]
)
1
(
exp[
1
a
Electrons only
Electrons and holes
k  ah / ae

Speed of the reach-through APD
• The speed of the reach-through APD depends on
three factors
1. The time it takes for the photogenerated electron to
cross the absorption region (-layer) to the multiplication
region (p-layer)
2. The time it takes for the avalanche process to build up in
the p-region and generate EHPs
3. The time it takes for the last hole released in the
avalanche process to transit through the -region

Speed of photodetector
• The response time of an APD to an optical pulse is longer
than a corresponding pin structure
– But, in practice, the multiplication gain makes up for the reduction in
the speed.
• The overall speed of a photodetector circuit
– includes limitation from the electronic pre-amplifier connected to
the photodetector.
• The APD requires less subsequent electronic
amplication
– Which translates to an overall speed that can be faster than a
corresponding detector circuit using a pin photodiode

Example:
InGaAs APD responsivity
• An InGaAs APD has a quantum efficiency (QE) of 60%
at 1.55m in the absence of multiplication (M=1). It is
biased to operate with a multiplication of 12.
Calculate the photocurrent if the incident optical
power is 20nW.
What is the responsivity when the
multiplication is 12?

Solution
1
6.6261034
3108
  0.75AW
Theresponsivity M  12 is
The photodiodecurrentIph in theAPD willbe Ipho multiplied by M,
The responsivity at M  1in terms of the quantum efficiency is
 12
1.5108
A1.8107
A
I ph MIpho
12 0.75 1
/ P  MR    9.0AW
R= Iph o
1 9 8
I  RP  0.75AW 2010 W 1.510 A
pho o
If I ph is theprimary photocurrent (unmultiplied) and Pois theincident optical power then by definition
R  I ph/ Po so that
e 
1.61019

1550109

R   0.6
hc

Typical multiplication (gain) M vs. reverse bias characteristics for a typical commercial
Si APD, and the effect of temperature. (M measured for a photocurrent generated at
650 nm of illumination)

(a) A Si APD structure without a guard ring. (b) A schematic illustration
of the structure of a more practical Si APD. Note: SiO2 is silicon dioxide
and serves as an insulating passivation layer.

Photodiode Comparison
Photodiode  range peak
R
at peak
Gain Id
For 1 mm2 Features
nm nm A/W
GaP pin 150550 450 0.1 <1 1 nm UV detectiona
GaAsP pn 150750 500720 0.20.4 <1 0.0050.1 nA UV to visible, covering the
human eye, low Id.
GaAs pin 570870 850 0.50.5 <1 0.11 nA High speed and low Id
Si pn 2001100 600900 0.50.6 <1 0.0050.1 nA Inexpensive, general purpose,
low Id
Si pin 3001100 8001000 0.50.6 <1 0.11 nA Faster than pn
Si APD 4001100 800900 0.40.6b 10103 110 nAc High gains and fast
Ge pin 7001800 15001580 0.40.7 <1 0.11 A IR detection, fast.
Ge APD 7001700 15001580 0.40.8b 1020 110 Ac IR detection, fast
InGaAs pin 8001700 15001600 0.71 <1 150 nA Telecom, high speed, low Id
InGaAs APD 8001700 15001600 0.70.95b 1020 0.0510 Ac Telecom, high speed and
gain.
InAs pn 23.6 m 3.03.5 m 11.5 <1 >100 A Photovoltaic mode. Normally
cooled
InSb pn 45.5 m 5 m 3 <1 Large Photovoltaic mode. Normally
cooled
NOTE: cFGAP71 (Thorlabs); aAt M = 1; cAt operating multiplication.

Simplified schematic diagram of a separate absorption and multiplication (SAM) APD using a
heterostructures based on InGaAs-InP. P and N refer to p and n -type wider-bandgap semiconductor.
Heterojunction Photodiodes: SAM

(a)Energy band diagrams for a SAM
detector with a step junction between
InP and InGaAs. There is a valence
band step ΔEv from InGaAs to InP that
slows hole entry into the InP layer.
(b)An interposing grading layer
(InGaAsP) with an intermediate
bandgap breaks ΔEv and makes it
easier for the hole to pass to the InP
layer for a detector with a graded
junction between InP and InGaAs.
This is the SAGM structure.

Simplified schematic diagram of a more practical mesa-etched SAGM
layered APD

APD Characteristics
Typical current and gain (M) vs. reverse bias voltage for a commercial InGaAs reach-through APD. Id and
Iph are the dark current and photocurrent respectively. The input optical power is ~100 nW. The gain M is 1
when the diode has attained reach-through and then increases with the applied voltage. (The data extracted
selectively from Voxtel Catalog, Voxtel, Beaverton, OR 97006)

EXAMPLE: InGaAs APD Responsivity
An InGaAs APD has a quantum efficiency (QE, e) of 60 % at 1.55 m in the absence of multiplication (M =
1). It is biased to operate with a multiplication of 12. Calculate the photocurrent if the incident optical
power is 20 nW. What is the responsivity when the multiplication is 12?
Solution
The responsivity at M = 1 in terms of the quantum efficiency is
= 0.75 A W-1
If Ipho is the primary photocurrent (unmultiplied) and Po is the incident optical power
then by definition, R = Ipho/Po so that
Ipho = RPo
= (0.75 A W-1)(2010-9 W)
= 1.510-8 A or 15 nA.
The photocurrent Iph in the APD will be Ipho multiplied by M,
Iph = MIpho
= (12)(1.510-8 A)
= 1.8010-7 A or 180 nA.
The responsivity at M = 12 is
R = Iph /Po = MR = (12) / (0.75) = 9.0 A W-1
19 9
34 8 -1
(1.6 10 C)(1550 10 m)
(0.6)
(6.626 10 J s)(3 10 m s )
e
e
hc


 

 
 
 
R

EXAMPLE: Silicon APD
A Si APD has a QE of 70 % at 830 nm in the absence of multiplication, that is M = 1. The APD is
biased to operate with a multiplication of 100. If the incident optical power is 10 nW what is the
photocurrent?
Solution
The unmultiplied responsivity is given by,
= 0.47 A W-1
The unmultiplied primary photocurrent from the definition of R is
Ipho = RPo = (0.47 A W-1)(1010-9 W) = 4.7 nA
The multiplied photocurrent is
Iph = MIpho = (100)(4.67 nA ) = 470 nA or 0.47 A
19 9
34 8 -1
(1.6 10 C)(830 10 m)
(0.70)
(6.626 10 J s)(3 10 m s )
e
e
hc


 

 
 
 
R

EXAMPLE: Avalanche multiplication in Si APDs
The electron and hole ionization coefficients ae and ah in silicon are approximately given by Eq. (5.6.4)
with A  0.740×106 cm-1, B  1.16×106 V cm-1 for electrons (ae) and A  0.725×106 cm-1 and B 
2.2×106 V cm-1 for holes (ah). Suppose that the width w of the avalanche region is 0.5 m. Find the
multiplication gain M when the applied field in this region reaches 4.00×105 V cm-1, 4.30×105 V cm-1
and 4.38×105 V cm-1
. What is your conclusion?
Solution
At the field of E = 4.00×105 V cm-1, from Eq. (5.6.4)
ae = Aexp(B/E)
= (0.74×106 cm-1)exp[1.16×106 V cm-1)/(4.00×105 V cm-1)]
= 4.07×104 cm-1.
Similarly using Eq. (5.6.4) for holes, ah = 2.96×103 cm-1. Thus k = ah /ae = 0.073.
Using this k and ae above in Eq. (5.6.6) with w = 0.5×10-4 cm,
= 11.8
Note that if we had only electron avalanche without holes ionizing, then the
multiplication would be
Me = exp (aew) = exp[(4.07×104 cm-1)(0.5×10-4 cm)] = 7.65
073
.
0
)]
cm
10
5
.
0
)(
cm
10
07
.
4
)(
073
.
0
1
(
exp[
073
.
0
1
1
-
4
4






 
M

EXAMPLE: Avalanche multiplication in Si APDs
Solution (contiued)
We can now repeat the calculations for E = 4.30×105 V cm-1 and again for E
= 4.38×105 V cm-1. The results are summarized in Table 5.3 for both M and
Me. Notice how quickly M builds up with the field and how a very small
change at high fields causes an enormous change in M that eventually
leads to a breakdown. (M running away to infinity as Vr increases.) Notice
also that in the presence of only electron-initiated ionization, Me simply
increases without a sharp run-away to breakdown.
E (V cm-1) ae (cm-1) ah (cm-1) k M Me Comment
4.00×105 4.07×104 2.96×103 0.073 11.8 7.65 M and Me not too different
at low E
4.30×105 4.98×104 4.35×103 0.087 57.2 12.1 7.5% increase in E, large
difference between M and
Me
4.38×105 5.24×104 4.77×103 0.091 647 13.7 1.9% increase in E

Superlattice APD
Multiple Quantum Well Detectors
(a) Energy band diagram of a MQW superlattice APD.
(b) Energy band diagram with an applied field and impact ionization.

Schottky Junction Photodiodes
GaAsP Schottky junction
photodiode for 190-680
nm detection, from UV to
red (Courtesy of
Hamamatsu)
GaP Schottky junction
photodiode for 190 nm
to 550 nm detection.
(Courtesy of
Hamamatsu)
Schottky kunction type metal-semiconductor-metal
(MSM) type photodetectors. (Courtesy of
Hamamatsu)
AlGaN Scottky junction
photodiode for UV
detection (Courtesy of
sglux, Germany)

Schottky Junction
(a) Metal and an n-type semiconductor before contact. The metal work function Fm is
greater than that of the n-type semiconductor (b) A Schottky junction forms between the
metal and the semiconductor. There is a depletion region in the semiconductor next to the
metal and a built-in field Eo (c) Typical I vs. V characteristics of a Schottky contact device.

Reverse biased Schottky junction and the dark current due to the injection
of electrons from the metal into the semiconductor over the barrier FB.
Schottky Junction

LEFT: Photogeneration in the depletion region and the resulting photocurrent.
RIGHT: The Schottky junction photodetector
Schottky Junction

Schottky junction
 range
nm
Rpeak (at peak)
(A/W)
Jdark
per mm2
Features with typical values
GaAsP 190680 0.18 (610 nm) 5 pA UV to red, tR = 3.5 s. (G1126 seriesa)
GaP 190550 0.12 (440 nm) 5 pA UV to green, tR = 5 s. (G1961a)
AlGaN 220375 0.13 (350 nm) 1 pA
Measurement of UV; blind to visible light.
(AG38Sb)
GaAs 320900 0.2 (830 nm) ~ 1 nA
Wide bandwidth > 10 GHz, tR < 30 ps. (UPD-30-
VSG-Pc)
InGaAs MSM 8501650 0.4 (1300 nm) 5 A
Optical high speed measurements, tR = 80 ps, tF =
160 ps. (G7096a)
GaAs MSM 450870 0.3 (850 nm) 0.1 nA
Optical high speed measurements, tR = 30 ps, tF =
30 ps. (G4176a)
Schottky junction based photodetectors and some of their features. tR and tF are the rise and fall times
of the output of the photodetector for an optical pulse input. The rise and fall times represent the times
required for the output to rise from 10% to 90% of its final steady state value and to fall from 90% to
10% of its value before the optical pulse is turned off.
aHamamatsu (Japan); bsglux (Germany); cAlphalas

LEFT: The metal electrodes are on the surface of the semiconductor crystal
(which is grown on a suitable substrate).
RIGHT: The electrodes are configured to be interdigital and on the surface of
the crystal.

LEFT: Two neighboring Schottky junctions are connected end-to-end, but in opposite directions as shown for A and B.
The energy band diagram without any bias is symmetrical. The grey areas represent the SCL1 and SCL2 at A and B.
RIGHT: Under a sufficiently large bias, the SCL1 from A extends and meets that from B so that the whole
semiconductor between the electrodes is depleted. There is a large field in this region, and the photogenerated EHPs
become separated and then drifted, which results in a photocurrent.

Phototransistor
IE  exp(eVBE/kBT)
Iph  bIpho
Transistor action
Gain

Photoconductive Detectors
PbS (lead sulfide) photoconductive detectors for the detection of IR
radiation up to 2.9 m. They are typically used in such applications
as radiation thermometers, flame monitors, water content and food
ingredient analyzers, spectrophotometers etc.. (P9217 series)
(Courtesy of Hamamatsu.)

Photoconductive (PC) Detectors
Photodiode
PbS (PC)
10C
PbSe (PC)
10 C
InSb (PC)
10C
peak (m) 2.4 4.1 5.5
Id or Rd 0.11 M 0.11 M 110 k
NEP W Hz-1/2 - -
D* cm Hz1/2/ W 1×109 5×109 1×109
Used for radiation measurement at long wavelengths
PbS photoconductive
detectors
(Courtesy of
Hamamatsu)

Used for radiation measurement at long wavelengths
PbS photoconductive
detectors
(Courtesy of
Hamamatsu)

The basic principle in photoconductive detectors is the
change in the resistance of the semiconductor upon
exposure to light.
The photoconductor (PC) has a dark resistance Rd and is
biased by VB through a load RL.
A chopper (either mechanical or electronic) chops the
light at a frequency fc. The resistance of the PC changes
periodically at the chopper frequency.
The photocurrent generates a varying voltage signal vph(t) across Rd, which can be
coupled through a coupling capacitor into a lock-in amplifier LIA. This amplifier is
synchronized with the chopper and only amplifies the signal if it is in phase with the
chopper. Its output is a dc signal that represents the magnitude of vph that is in phase
with the chopped light.
The periodic change in Rd causes a period change in the current. This periodic change is
the photocurrent iph(t) signal and is an ac-type signal at the frequency fc.

A semiconductor slab of length l, width w and depth d is illuminated with
light of wavelength 

A photoconductor with ohmic contacts (contacts not limiting carrier entry) can
exhibit gain. As the slow hole drifts through the photoconductors, many fast
electrons enter and drift through the photoconductor because, at any instant, the
photoconductor must be neutral. Electrons drift faster which means as one
leaves, another must enter.

Photoconductivity Ds and Photocurrent Density Jph
Steady state illumination
hcd
d
hv
Ad
A i
i
i 


 I
I
g 







F
 ph
ph
Photon flux = Fph
0
ph 
D


D
t
n
dt
n
d
g
i = Internal
quantum
efficiency
Ds = eeDn + ehDp = eDn(e + h)
Photoconductivity
hcd
e h
e
i )
( 

t

s


D
I E
s
s D

D

l
V
Jph
Photogeneration rate

Photoconductive Gain
Photon flux = Fph
hc
w
e
wdJ
e
I h
e
i E
I )
(
flow
electron
of
Rate ph
ph 

t
 



hc
w
wd i 
 I
g
g l
l 

 ph
ph )
(
)
Volume
(
generation
electron
of
Rate
Photoconductive gain G
l
E
)
(
absorption
light
by
generation
electron
of
Rate
circuit
external
in
flow
electron
of
Rate h
e
G


t 



Photoconductive Gain
Photon flux = Fph
l
E
)
(
absorption
light
by
generation
electron
of
Rate
circuit
external
in
flow
electron
of
Rate h
e
G


t 


Electron and hole transit times (time to cross the
semiconductor) are
te = l / (eE)
th = l / (hE)












e
h
e
h
e t
t
t
G


t
t
t
1
Electron
Hole
Photoconductive gain G

Basic Photodiode Circuits
(a) The photodiode is reverse biased through RL and illuminated. Definitions of positive I and V are
shown as if the photodiode were forward biased. (b) IV characteristics of the photodiode with
positive I and V definitions in (a). The load line represents the behavior of the load R. The operating
point is P where the current and voltage are I and V.

Basic Photodiode Circuits: The Load Line
The current through RL is
I =  (V + Vr / RL
This is the load line shown in the figure. P is the intersection of the load line with the
photodiode I vs. V curve and is the operating point.
P is the operating
point
V  3.5 V
I   2.5 A
I  Iph

Basic Photodiode Circuits
A simple circuit for the measurement of the photocurrent Iph by using a current-voltage
converter or a transimpedance amplifier. The reverse bias Vr is a positive number. Note
that biasing circuit for the op amp is not shown.

Photodiode Equivalent Circuit
(a) A real photodiode has series and parallel resistances Rs and Rp and a SCL
capacitance Cdep. A and C represent anode and cathode terminals. (b) The equivalent
circuit of a photodiodes. For ac (or transient) signals, the battery can be shorted since ac
signals will simply pass through the battery.

Reverse Biased Photodiode Equivalent Circuit
Rs = Series resistance
Rp = Shunt (parallel) resistance
Ideal photodiode
Total capacitance = ideal
photodiode SCL
capacitance + terminal
capacitance

A Commercial Photoreceiver
A photoreceiver that has an InGaAs APD and peripheral electronics (ICs) to achieve
high gain and high sensitivity. There is also a thermoelectric cooler (TEC) and a
temperature sensor (TSense). Courtesy of Voxtel Inc (www.voxtel-inc.com)
APD
Thermoelectric (TEC) cooler
Op amp
Output
APD bias
Temperature
sensor (Tsense)
TEC Current in direction
TEC Current out
direction
Base/Collector
Emitterr
Op amp bias

Pulsed Excitation
Large resistor to
bias the PD
Bias or shorting capacitor to short RB
and the battery for the transient
photocurrent. It is a short for
ac/transient signals
Load resistor for
developing a
voltage signal
Very fast buffer
or amplifier that
does not load RL.
Po(t)
t
Coupling capacitor that
allows ac/transient signal
coupling
Reverse biases
the PD
PD
Short light pulse

Pulsed Excitation
Rise time Fall time
Assume: The buffer is extremely fast
and does not limit the response
The Experiment
Are these related to fc?

Rise and Fall Times, and Bandwidth
Rise time Fall time
Very roughly, tR  tF
V(t)  V100exp(t/t)
Measured from toff
tF = 2.2t
t = (Rs+ RL)Ct  RLCt
t = (Rs+ RL)Ct  RLCt
)
ns
(
MHz
350
35
.
0
2
1
2
1
F
F
t
L
c
C
R
f
t
t
t






Pulsed Excitation
Non-RLCt response
Response due to the diffusion and drift of photogenerated carriers
Assume Rs + RL is very small so that (Rs + RL)Ct is negligible
Drift of carriers
in the depletion
region
Diffusion of
carriers in the
neutral region
Slow
Fast
Fast
Slow
t
Photocurrent
Drift of carriers in the
depletion region
Diffusion of
carriers in the
neutral region

Noise in Photodiodes
Noise current = Total
RMS current fluctuations
Constant illumination
What is the RMS of fluctuations?
Consider a receiver with a photodiode and a sampling resistor RL
The amplifier A is assumed noiseless
Consider constant illumination Po
Total current without noise = Dark current (Id) + Photocurrent (Iph) = “Constant”
Observed Current = Dark current + Photocurrent and Fluctuations (Noise)
What is this “Noise” ?
2
)
(
ns
fluctuatio
of
RMS t
i

We can represent the “noise current”
by the RMS of fluctuations
i(t)

The dark current has shot noise or fluctuations about Id,
in-dark = (2eIdB)1/2
Quantum noise is due to the photon nature of light and its effects are the same
as shot noise. Photocurrent has quantum noise or shot noise
B = Bandwidth
in-quantum = (2eIphB)1/2
Noise current = Total
RMS current fluctuations
Constant illumination
What is the RMS of fluctuations?
i(t)

2
quantum
2
dark
2

 
 n
n
n i
i
i
Total shot noise current, in
in = [2e(Id + Iph)B]1/2
We can conceptually view the photodetector current as
Id + Iph + in
This flows through a load resistor RL and voltage across RL is amplified by A to
give Vout
The noise voltage (RMS) due to shot noise in PD = inRLA

Total current flowing into RL has three components:
Id = Dark current. In principle, we can subtract this or block it with a
capacitor if Iph is an ac (transient) signal.
Iph = Photocurrent. This is the signal. We need this. It could be a steady
or varying (ac or transient) signal.
in = Total shot noise. Due to shot noise from Id and Iph. We cannot
eliminate this.

4
=
from
current
noise
Thermal
1/2
th 






L
B
L
R
TB
k
R
i
4
=
2
TB
k
i
R B
L
i2  L
R
i in
Current

The resistor RL exhibits thermal noise (Johnson noise)
Power in thermal fluctuations in RL = 4kBTB

Summary of Noise in PD and RL
Important Note: Total noise is always found by first summing the average powers involved
in individual fluctuations e.g. power in shot noise + power in thermal noise
Power in shot noise in PD = in
2RL = [2e(Id + Iph)B]RL
Power in thermal fluctuations in RL = 4kBTB
Noise in the amplifier A must also be included
See advanced textbooks

Power
Noise
Power
Signal
SNR 
 
L
B
ph
d
ph
B
L
n
L
ph
R
TB
k
B
I
I
e
I
TB
k
R
i
R
I
4
)
(
2
4
SNR
2
2
2





Important Note: Total noise is always found by first summing the average powers involved
in individual fluctuations e.g. power in shot noise + power in thermal noise
Signal to Noise Ratio

Noise Equivalent Power: NEP
2
/
1
1
Bandwidth
1
SNR
for
power
Input
NEP
B
P



Definition
NEP is defined as the required optical input power
to achieve a SNR of 1 within a bandwidth of 1 Hz
  2
/
1
2
/
1
1
)
(
2
1
NEP ph
d I
I
e
B
P



R
Units for NEP are W Hz–1/2

Detectivity, D
NEP
1
y
Detectivit 
Definition
Specific detectivity D*
NEP
*
2
/
1
A
D 
Units for D* are cm Hz-1/2 W-1, or Jones

NEP and Detectivity of Photodetectors
Photodiode
GaP
Schottky
Si
pin
Ge
pin
InGaAs
pin
PbS (PC)
10C
PbSe (PC)
10 C
InSb (PC)
10C
peak (m) 0.44 0.96 1.5 1.55 2.4 4.1 5.5
Id or Rd 10 pA 0.4 nA 3 A 5 nA 0.11 M 0.11 M 110 k
NEP W Hz-1/2 5.4×10-15 1.6×10-14 1×10-12 4×10-14 - -
D* cm Hz1/2/ W 1×1013 1×1012 1×1011 5×1012 1×109 5×109 1×109
Typical noise characteristics of a few selected commercial photodetectors. PC means a
photoconductive detector, whose photoconductivity is used to detect light. For PC detectors,
what is important is the dark resistance Rd, which depends on the temperature.
  2
/
1
2
/
1
1
)
(
2
1
NEP ph
d I
I
e
B
P



R

NEP and Dark Current
The dependence of NEP (W Hz-1/2) on the photodetector dark current Id for Si and
InGaAs pin, Ge pn junction, and GaP Schottky photodiodes. Dashed lines indicate
observed trends. Filled circle, Si pin; open circle, InGaAs pin at 25 C, open
diamond at 10 C, open square, 20 C; inverted triangle, Ge pn; triangle, GaAsP
Schottky. (Data extracted from datasheets of 35 commercial photodiodes)

Noise in Avalanche Photodiode (APD)
in-APD = Min = M[2e(Ido + Ipho)B]1/2
in-APD = [2e(Ido + Ipho)M2B]1/2
Ideally the shot noise is simply multiplied so that we
should expect
But, we observe excess noise above this shot noise
Avalanche Noise
in-APD = [2e(Ido + Ipho)M2FB]1/2
Excess Noise Factor

Noise in Avalanche Photodiode (APD)
Excess Avalanche Noise Factor F
in-APD = [2e(Ido + Ipho)M2FB]1/2
Excess Noise Factor
APDs exhibit excess avalanche noise due to the randomness of the impact
ionization process in the multiplication region. Some carriers travel far
and some short distances within this zone before they cause impact
ionization
F  Mx where x is an index that depends on the
semiconductor, the APD structure and the type of carrier
that initiates the avalanche (electron or hole)
For Si APDs, x is 0.30.5 whereas for Ge and III-V (such as InGaAs)
alloys it is 0.71

EXAMPLE: Noise of an ideal photodetector
Consider an ideal photodiode with e = 1 (QE = 100%) and no dark current, Id = 0. Show that the
minimum optical power required for a signal to noise ratio (SNR) of 1 is
(5.12.9)
Calculate the minimum optical power for a SNR = 1 for an ideal photodetector operating at 1300 nm
with a bandwidth of 1 GHz? What is the corresponding photocurrent?
Solution
We need the incident optical power P1 that makes the photocurrent Iph equal to the
noise current in, so that SNR = 1. The photocurrent (signal) is equal to the noise
current when
Iph = in =[2e(Id + Iph)B]1/2 = [2eIphB]1/2
since Id = 0. Solving the above, Iph = 2eB
From Eqs. (5.4.3) and (5.4.4), the photocurrent Iph and the incident optical
power P1 are related by
Thus,
B
hc
P

2
1 
eB
hc
eP
I e
ph 2
1




B
hc
P
e

2
1 

For an ideal photodetector, e = 1 which leads to Eq. (5.12.9). We note that for a
bandwidth of 1Hz, NEP is numerically equal to P1 or NEP = 2hc/.
For an ideal photodetector operating at 1.3 m and at 1 GHz,
P1 = 2hcB/e
= 2(6.6310-34 J s)(3108 m s-1)(109 Hz) / (1)(1.310-6 m)
= 3.110-10 W or 0.31 nW.
This is the minimum signal for a SNR = 1. The noise current is due to quantum noise.
The corresponding photocurrent is
Iph = 2eB = 2(1.610-19 C)(109 Hz) = 3.210-10 A or 0.32 nA.
Alternatively we can calculate Iph from Iph = eeP1 / hc with e = 1.
EXAMPLE: Noise of an ideal photodetector

Solution
By definition, NEP is that optical power per square root of bandwidth which
generates a photocurrent equal to the noise current in the detector.
NEP = P1/B1/2
Thus,
P1 = NEPB1/2
= (10-13 W Hz -1/2)(109 Hz)1/2
= 3.1610-9 W or 3.16 nW
EXAMPLE: NEP of a Si pin photodiode
A Si pin photodiode has a quoted NEP of 110-13 W Hz-1/2. What is the optical
signal power it needs for a signal to noise ratio (SNR) of 1 if the bandwidth of
operation is 1GHz?

EXAMPLE: SNR of a receiver
Consider an InGaAs pin photodiode used in a receiver circuit as in Figure 5.31 with a load resistor of
10 k. The photodiode has a dark current of 2 nA. The bandwidth of the photodiode and the amplifier
together is 1 MHz. Assuming that the amplifier is noiseless, calculate the SNR when the incident
optical power generates a mean photocurrent of 5 nA (corresponding to an incident optical power of
about 6 nW since R is about 0.80.9 nA/nW at the peak wavelength of 1550 nm).
Solution
The noise generated comes from the photodetector as shot noise and from RL as
thermal noise. The mean thermal noise power in the load resistor RL is 4kBTB. If
Iph is the photocurrent and in is the shot noise in the photodetector then
The term 4kBTB/RL in the denominator represents the mean square of the thermal
noise current in the resistor. We can evaluate the magnitude of each noise current
by substituting, Iph = 5 nA, Id = 2 nA, B = 1 MHz, RL = 104 , T = 300 K.
2 2
2
Signal Power
SNR
Noise Power 4 2 ( ) 4 /
ph L ph
n L B d ph B L
I R I
i R k TB e I I B k TB R
  
  
 
 

EXAMPLE: SNR of a receiver
Shot noise current from the detector = [2e(Id + Iph)B]1/2 = 0.047 nA
= 1.29 nA
Thus, the noise contribution from RL is greater than that from the photodiode.
The SNR is
= 15.0
Generally SNR is quoted in decibels. We need 10log(SNR), or 10log(15.0)
i.e., 11.8 dB. Clearly, the load resistance has a dramatic effect on the overall noise
performance.
2
9
2
9
2
9
)
A
10
29
.
1
(
)
A
10
047
.
0
(
)
A
10
5
(
SNR 








EXAMPLE: Noise in an APD
Consider an InGaAs APD with x  0.7 which is biased to operate at M = 10. The unmultiplied dark current
is 10 nA and bandwidth is 700 MHz.
(a) What is the APD noise current per square root of bandwidth?
(b) What is the APD noise current for a bandwidth of 700 MHz?
(c) If the responsivity (at M = 1) is 0.8 A W-1 what is the minimum optical power for a SNR of 10?
Solution
(a) In the absence of any photocurrent, the noise in the APD comes from the
dark current. If the unmultipled dark current is Ido then the noise current (rms) is
in-dark = [2eIdoM2+xB]1/2
Thus,
= 1.27  10-12 A Hz-1/2 or 1.27 pA Hz-1/2.
(b) In a bandwidth B of 700 MHz, the noise current is
in-dark = (700106 Hz)1/2(1.27 pA Hz-1/2)
= 3.3510-8 A or 33.5 nA.
7
.
0
2
9
19
2
dark
)
10
)(
A
10
10
)(
C
10
6
.
1
(
2
2
B








 x
do
n
M
eI
i

EXAMPLE: Noise in an APD
(c) The SNR with a primary photocurrent Ipho in the APD is
Rearranging to obtain Ipho we get,
This is a quadratic equation in Ipho with defined coefficients since M, x, B, Ido and
SNR are given. Solving this quadratic with a SNR = 10 for Ipho we find
Ipho  1.76  10-8 A or 17.6 nA
While it may seem odd that Ipho is less than the dark noise current (33.5 nA) itself,
the actual photocurrent Iph however is 176 nA, since it is multiplied by M. Further the
total noise current, in-APD = [2e(Ido + Ipho)M2+xB]1/2 is 55.7 nA so that one can easily
check that SNR = Iph
2 / i2
n-APD is indeed 10.
By the definition of responsivity, R = Ipho/Po, we find,
Po = Ipho / R = (1.7610-8 A)/(0.8 A W-1) = 2.210-8 W or 22 nW
2 2
2
Signal Power
SNR
Noise Power 2 ( )
pho
x
do pho
M I
e I I M B

 
 

 
0
]
)
SNR
(
2
[
)]
SNR
(
2
[
)
( 2
2
2
2


 

do
x
pho
x
pho I
B
eM
I
B
eM
I
M

CCD Image Sensor
The inventors of the CCD (charge coupled device)
image sensor at AT&T Bell Labs: Willard Boyle (left)
and George Smith (right). The CCD was invented in
1969, the first CCD solid state camera was
demonstrated in 1970, and a broadcast quality TV
camera by 1975. (W. S. Boyle and G. E. Smith,
“Charge Coupled Semiconductor Devices", Bell
Systems Technical Journal, 49, 587, 1970. (Courtesy
of Alcatel-Lucent Bell Labs.)
A CCD image sensor. The FTF6040C
is a full-frame color CCD image sensor
designed for professional digital
photography, scientific and industrial
applications with 24 megapixels and a
wide dynamic range. Chip imaging
area is 36 × 24 mm2, and pixel size is
6 m × 6 m. (Courtesy of Teledyne-
DALSA)

4 Megapixel CMOS image sensor
(Courtesy of Teledyne-DALSA)
CMOS Image Sensor

Image Sensors
(a) The basic image sensing operation using an array of photosensitive pixels. (b) The image
sensor chip that incorporates the auxiliary electronics that run the sensor array (CMOS
technology)

Image Sensors
Color imaging by using two different techniques. Bayer filtering uses red (R), green
(G) and blue (B) filters on three pixels for capturing the R, G and B information.
3CCD uses a trichroic prism to separate the image colors into red, green and blue and
uses three CCD chips for each.

Active Matrix Readout
(a) An active matrix array (AMA)
(b) A basic photosensitive pixel structure for detecting the photons
arriving at the pixel defined by row a and column d.

(a) The pixel architecture in a CMOS image sensor. (b) A cross section of a
CMOS imager with microlenses and color filters (B = blue, G = green, R =
red) for color imaging
CMOS Image Sensor

CCD Image Sensor
(Courtesy of Teledyne-DALSA)

CCD Image Sensor
One element of a CCD imaging sensor, which is a MOS (metal-
oxide-semiconductor) device

CCD Image Sensor
Transfer of charge from one well to another by clocking the gate voltages. The table shows
the gate voltage sequences in a three phase CCD. (Schematic only)

Photodiode and Photodetectors.pptx

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