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2SC3423
2006-11-091
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3423
Audio Frequency Amplifier Applications
• Complementary to 2SA1360
• Small collector output capacitance: Cob = 1.8 pF (typ.)
• High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 150 V
Collector-emitter voltage VCEO 150 V
Emitter-base voltage VEBO 5 V
Collector current IC 50 mA
Base current IB 5 mA
Ta = 25°C 1.2Collector power
dissipation Tc = 25°C
PC
5
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-8H1A
Weight: 0.82 g (typ.)
2SC3423
2006-11-092
Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 0.1 μA
Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA
DC current gain
hFE
(Note)
VCE = 5 V, IC = 10 mA 80 ― 240
Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V
Base-emitter voltage VBE VCE = 5 V, IC = 10 mA ― ― 0.8 V
Transition frequency fT VCE = 5 V, IC = 10 mA ― 200 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 1.8 ― pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C3423 Part No. (or abbreviation code)
Characteristics indicatorLot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC3423
2006-11-093
DCcurrentgainhFE
TransitionfrequencyfT(MHz)
Collector-emitter voltage VCE (V)
IC – VCE
CollectorcurrentIC(mA)
Collector current IC (mA)
VCE (sat) – IC
Collector-emittersaturationvoltage
VCE(sat)(V)
Base-emitter voltage VBE (V)
IC – VBE
CollectorcurrentIC(mA)
Collector current IC (mA)
fT – IC
Collector current IC (mA)
hFE – IC Cob – VCB
CollectoroutputcapacitanceCob(pF)
Collector-base voltage VCB (V)
0
0
Common emitter
Tc = 25°C
56
24
6 8 1210
0.5
0.3
0.2
IB = 0.1 mA
0.4
42
8
16
40
32
48
14 16
−25
Common emitter
VCE = 5 V
Tc = 100°C
25
0 0.6 0.8 1.21.00.40.2 1.4 1.6
0
56
24
8
16
40
32
48
1
0.005
0.05
0.3
3 10 300.3
0.1
0.03
0.001
0.5
500.5 5
Common emitter
IC/IB = 10
25
Tc = 100°C
−25
5
500
50
100
300
10
1 3 10 100300.5
30
1000
Common emitter
Tc = 25°C
VCE = 10 V
0.3 3 10 301
10
300
50
500
100
1000
30
5050.5
Tc = 100°C
25
−25
Common emitter
VCE = 5 V
0.5 1 3 10 30
0.5
3
10
30
5
100
1
IE = 0
f = 1 MHz
Tc = 25°C
50
2SC3423
2006-11-094
Ambient temperature Ta (°C)
PC – Ta
CollectorpowerdissipationPC(W)
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0 40 60 1008020
6
0
2
1
3
(1)
(2)
120 140
4
5
160 180
2SC3423
2006-11-095
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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Original NPN Bipolar Transistor 2SC3423 C3423 3423 TO-126 New Toshiba

  • 1. 2SC3423 2006-11-091 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3423 Audio Frequency Amplifier Applications • Complementary to 2SA1360 • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 5 mA Ta = 25°C 1.2Collector power dissipation Tc = 25°C PC 5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-8H1A Weight: 0.82 g (typ.)
  • 2. 2SC3423 2006-11-092 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA DC current gain hFE (Note) VCE = 5 V, IC = 10 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Base-emitter voltage VBE VCE = 5 V, IC = 10 mA ― ― 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ― 200 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 1.8 ― pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C3423 Part No. (or abbreviation code) Characteristics indicatorLot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
  • 3. 2SC3423 2006-11-093 DCcurrentgainhFE TransitionfrequencyfT(MHz) Collector-emitter voltage VCE (V) IC – VCE CollectorcurrentIC(mA) Collector current IC (mA) VCE (sat) – IC Collector-emittersaturationvoltage VCE(sat)(V) Base-emitter voltage VBE (V) IC – VBE CollectorcurrentIC(mA) Collector current IC (mA) fT – IC Collector current IC (mA) hFE – IC Cob – VCB CollectoroutputcapacitanceCob(pF) Collector-base voltage VCB (V) 0 0 Common emitter Tc = 25°C 56 24 6 8 1210 0.5 0.3 0.2 IB = 0.1 mA 0.4 42 8 16 40 32 48 14 16 −25 Common emitter VCE = 5 V Tc = 100°C 25 0 0.6 0.8 1.21.00.40.2 1.4 1.6 0 56 24 8 16 40 32 48 1 0.005 0.05 0.3 3 10 300.3 0.1 0.03 0.001 0.5 500.5 5 Common emitter IC/IB = 10 25 Tc = 100°C −25 5 500 50 100 300 10 1 3 10 100300.5 30 1000 Common emitter Tc = 25°C VCE = 10 V 0.3 3 10 301 10 300 50 500 100 1000 30 5050.5 Tc = 100°C 25 −25 Common emitter VCE = 5 V 0.5 1 3 10 30 0.5 3 10 30 5 100 1 IE = 0 f = 1 MHz Tc = 25°C 50
  • 4. 2SC3423 2006-11-094 Ambient temperature Ta (°C) PC – Ta CollectorpowerdissipationPC(W) (1) Tc = Ta Infinite heat sink (2) No heat sink 0 40 60 1008020 6 0 2 1 3 (1) (2) 120 140 4 5 160 180
  • 5. 2SC3423 2006-11-095 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.