Original PNP Transistor 2SB688 B688 8A 120V New Toshiba

1. SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SB686
POWER AMPLIFIER APPLICATIONS.
FEATURES
:
• Complementary to 2SD716.
• Recommended for 30 ^ 35W High-Fidelity Audio
Frequency Amplifier Output Stage.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation ~ .
F
(Tc=25°c:
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
'EBO
ic
PC
L
stg
RATING
-100
-100
-5
60
150
-55VL50
UNIT
V
Unit in mm
15.9MAX.
^W,4-
+0.30
1.0—0.25
s
w
03.2±Q.2
°[ d
=i
MM
n°
5.45±0.2 5.45±0.2
<
a
00
—u
0?
^n
^1
1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
JEDEC
16 B 1A
Weight : 4 .
6g
ELECTRICAL CHARACTERISTICS (Ta=2< °C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-100V, I E=0 - - -10 VA
Emitter Cut-off Current lEBO VEB=-5V, I C=0 - - -10 VA
Collector-Emitter
Breakdown Voltage
V (BR) CEO I
c
=-50mA, I
B
=0 -100 - - V
Emitter-Base
Breakdown Voltage
v (BR)EB0 IE=-10mA, I c
=0 -5 - - V
DC Current Gain
hFE
(Note)
VCE=-5V, IC=-1A 55 - 160
Collector-Emitter
Saturation Voltage
VcE(sat) I C=-4A, Ib=-0.4A - - -2.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-4A - - -1.5 V
Transition Frequency fT VCE="5V, IC=-1A - 10 - MHz
Collector Output Capacitance Cob VCB=-10V , IE=0 , f =lMHz - 270 - pF
Note : hFE Classification R : 55VL10, : 80M.60
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—27"7 —

2. 2SB686
J c - vCE hFE
3 -3
o
£ —2
o —
l
—330 —200
/ —150
-100
-50
I B ——20mA
i i i i
COMMON EMITTER
T c = 2 5 °C
I ,
.
, __L Si i
-2 —4 —6 —8 -10" —12 -14
COLLECTOR-EMITTER VOLTAGE V CJE (V)
vCE(sat) ~ Ic
-0.01 -0.03 -0.1 -0.3 -1
COLLECTOR CURRENT
—3—5
IC ( A )
PC Ta
is
o
to 2;
«S
d ® T a = T c
HEAT SINK
® 300X300X2mmA^
HEAT SINK
© 100 X 100 X 2 mmA£
HEAT SINK
V (£ NO HEAT S INK
"©
®
®
40 80 120
AMBIENT TEMPERATURE Ta
160
CC)
h(V) "T 1 1 | 1
1 II 1 III
3on 0°C
100
25 ["" •"'
50
_ COMMON EMITTER
- V ,r.=-5V
30
10 1_l I i nil I ,
-O.QL -O.03 -0.1 -0.3 -1 -3 -5 -10
COLLECTOR CURRENT I c (A)
-6
ic VBE
-5
COMMON
EM ITTER
VCE =-5V
-4
.O
-3
/
. o
~V1 111
-2
—2f
25
/ |
7/-0.4 -0.8 —L2 —L6 —2.0 -2.4 —2.8
BASE -EM ITTER VOLTAGE V BE (y)
SAFE OPERATING AREA
d -o.
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA CORPORATION
-278-