This document provides technical specifications for the KTC2026 epitaxial planar NPN transistor. It includes: - Maximum ratings for voltage, current, power and temperature. - Electrical characteristics like gain, saturation voltage, cutoff current. - Graphs of current vs voltage and power dissipation vs temperature under different conditions. - Safe operating area curves showing maximum pulsed and continuous collector current limits.

1. 2000. 3. 7 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC2026
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
Complementary to KTA1046.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
3.20 0.20
3.00 0.30
A
B
C
D
E
F
G 12.30 MAX
0.75 MAXH
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
J
K
L
M
N
O
P
Q
R
F
O
Q
1 2 3
L
P
N
B
G
J
M
D
N
TT
H
E
RT
V
S
K
L
U
T
S
0.5
5
25
2.60 0.15V
U
D
A C
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Collector Current IC 3 A
Base Current IB 0.5 A
Collector Power
Dissipation
Ta=25
PC
2
W
Tc=25 20
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 60 - - V
DC Current Gain hFE (Note) VCE=5V, IC=0.5A 100 - 300
Collector Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.25 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=0.5A - 0.7 1.0 V
Transition Frequency fT VCE=5V, IC=0.5A - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
Switching Time
Turn-on Time ton - 0.65 -
SStorage Time tstg - 1.3 -
Fall Time tf - 0.65 -
Note : hFE Classification Y:100 200, GR:150 300
IB1
15ΩB1I
CCV =30V
IB2
IB2
20µsec
I =-I =0.2A
1%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
<=

2. 2000. 3. 7 2/2
KTC2026
Revision No : 3
COLLECTORCURRENTI(A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)CE
CECI - V
h - I
CCOLLECTOR CURRENT I (A)
0.02 0.05 0.1 0.3
FEDCCURRENTGAINh
10
COLLECTOR-EMITTERSATURATION
CE(sat)
1030.050.02
COLLECTOR CURRENT I (A)C
V - I
1 2 3 4 5 6 7 8
0.5
1.0
1.5
2.0
2.5
3.0
COMMON EMITTER
Tc=25 C
60
50
40
30
20
90
80
70
0
I =10mAB
FE C
1 3 10
30
50
100
300
COMMON EMITTER
V =5VCE
Tc=100 C
Tc=25 C
Tc=-25 C
CE(sat) C
VOLTAGEV(V)
10.30.1 5
0.03
0.05
0.1
0.3
0.5
1
COMMON EMITTER
I /I =10C B
Tc=100 C
Tc=25 C
Tc=-25 C
COLLECTORPOWERDISSIPATIONP(W)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
25 50 75 100 125 150 175 200
5
10
15
20
25
30
35
40
Tc=Ta
INFINITE HEAT SINK
300x300x2mm Al
HEAT SINK
200x200x2mm Al
HEAT SINK
100x100x1mm Al
HEAT SINK
100x100x1mm Fe
HEAT SINK
50x50x1mm Al
HEAT SINK
50x50x1mm Fe
HEAT SINK
NO HEAT
SINK
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
I MAX.(PULSED)*C
(CONTINUOUS)
CI MAX.
SAFE OPERATING AREA
CECOLLECTOR-EMITTER VOLTAGE V (V)
1 3 10 100
0.1
CCOLLECTORCURRENTI(A)
305 5 0
0.3
0.5
1
3
5
10
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
SINGLE NONREPETITIVE
PULSE Tc=25 C
*
1m
S*
10mS*
100mS*
DC
OPERATION
VMAX.CEO