SPICE MODEL of XBS024S15R-G (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS024S15R-G
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS024S15R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
1000
Measurement
Forward Current:IF (mA) Simulation
100
10
1
0.1
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (mA) %Error
Measurement Simulation
0.1 0.212 0.212 0.00
0.2 0.229 0.230 0.56
0.5 0.253 0.254 0.33
1 0.271 0.272 0.48
2 0.291 0.291 0.07
5 0.320 0.317 -0.85
10 0.342 0.340 -0.71
20 0.368 0.366 -0.67
50 0.410 0.413 0.62
100 0.465 0.464 -0.11
200 0.540 0.540 -0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
50p
40p
30p
20p
10p
0
0V 10V 20V 30V 40V
I(V2)/(45V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 45 V1 U1
V1 = 0 XBS024S15R-G_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
50
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
40
30
20
10
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 12.100 12.172 0.60
2 10.150 10.284 1.32
5 7.455 7.419 -0.48
10 5.450 5.421 -0.53
20 3.750 3.810 1.60
30 3.050 3.068 0.60
40 2.650 2.618 -1.22
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
10mA
0A
-10mA
-20mA
1.968us 1.984us 2.000us 2.016us 2.032us 2.048us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.34V
V1 = -0.68V
TD = 3.0ns V1 U1
TR = 1.5ns XBS024S15R-G_P
PW = 2us
TF = 1.0ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 4.000 4.085 2.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
10uA
0
1.0uA
100nA
10nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS024S15R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
Reverse Current:IR (uA)
1.00
0.10
0.01
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1 0.061 0.060 -1.68
2 0.064 0.064 -0.43
5 0.074 0.074 1.26
10 0.090 0.091 1.65
20 0.130 0.128 -1.89
30 0.175 0.177 0.90
40 0.250 0.251 0.33
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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