The document presents a device modeling report for the MA3X152K0L diode from Panasonic Bee Technologies Inc., detailing model parameters including saturation current, series resistance, and reverse breakdown voltage. It includes circuit simulation results for forward current characteristics, capacitance characteristics, and reverse recovery characteristics, with measurement comparisons highlighting simulation accuracy. All rights to the document are reserved by the manufacturer.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: MA3X152K0L
MANUFACTURER: Panasonic
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

2. Circuit Configuration
U1
MA3X152K0L_p
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

3. DIODE MODEL PARAMETERS
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

4. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
100uA
10uA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1 U1
0V MA3X152K0L_p
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VF (V)
IF (mA) %Error
Measurement Simulation
0.1 0.520 0.521 0.22
0.2 0.555 0.553 -0.23
0.5 0.595 0.596 0.11
1 0.631 0.629 -0.42
2 0.656 0.662 0.81
5 0.708 0.707 -0.15
10 0.745 0.744 -0.21
20 0.786 0.786 -0.03
50 0.859 0.858 -0.13
100 0.939 0.940 0.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

6. Capacitance Characteristic
Circuit Simulation Result
10p
1.0p
100f
0V 10V 20V 30V 40V 50V 60V
-I(X_U1.D_D1)/(80V/1us)
V(R)
Evaluation Circuit
V2
R
0
V1 = 0 V1 U1
V2 = 80 MA3X152K0L_p
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

7. Comparison Graph
Circuit Simulation Result
Simulation Result
C (pF)
VR (V) %Error
Measurement Simulation
1 0.800 0.795 -0.67
2 0.790 0.775 -1.90
5 0.739 0.749 1.33
10 0.715 0.729 1.95
20 0.700 0.709 1.33
50 0.695 0.684 -1.60
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

8. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
Time
Evaluation Circuit
R1
V1 = -9.4V 50
V2 = 10.99V
TD = 0ns V1
TR = 3ns U1
TF = 2.85ns MA3X152K0L_p
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 2.560 2.539 -0.82
trb ns 1.680 1.661 -1.14
trr ns 4.240 4.200 -0.95
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011

9. Reverse Recovery Characteristic Reference
Measurement
Trj = 2.56 (ns)
Trb = 1.68 (ns)
Conditions: Ifwd=0.2A,Irev=0.2A, Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011