This document summarizes the device modeling report for a TOSHIBA 5GLZ47A general purpose rectifier diode. The summary includes key parameters, test circuit configurations, and comparison graphs of the simulated versus measured forward current, capacitance, and reverse recovery characteristics. Simulation results match well with measurements, validating the accuracy of the PSpice model for this diode component.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 5GLZ47A
MANUFACTURER: TOSHIBA
REMARK: TC=80C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
10mA
0V 2.0V
I(D1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc
5GLZ47A_80S
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.05 0.500 0.499 0.200
0.1 0.550 0.548 0.364
0.2 0.600 0.601 -0.167
0.5 0.686 0.684 0.292
1 0.764 0.763 0.131
2 0.860 0.861 -0.116
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
1.0n
100p
10p
1.0p
100mV 1.0V 10V 100V
I(V2)/(400V/1u)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 400 V1
V1 = 0 D1
TD = 0
TR = 1us
TF = 10ns 5GLZ47A_80S
PW = 5us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 128.400 128.400 0.000
0.1 115.200 119.000 -3.299
0.2 105.200 106.400 -1.141
0.5 85.800 85.700 0.117
1 70.200 70.000 0.285
2 54.600 54.800 -0.366
5 37.400 38.300 -2.406
10 29.000 28.700 1.034
20 21.100 21.400 -1.422
50 14.600 14.500 0.685
100 12.200 11.700 4.098
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
0A
-200mA
19.95us 20.00us 20.10us 20.20us
I(R1)
Time
Evaluation Circuit
R1
50
V2 = 10.65V V1
V1 = -9.45V D1
TD = 0
TR = 10ns 5GLZ47A_80s
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 80.00 ns 79.77 ns 0.287
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =19.2 (ns)
Trb= 60.8 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005