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Indium gallium-nitride
Indium gallium nitride (InGaN) is a semiconductor material made of a mixture of gallium nitride and indium nitride. It has advantages such as a low band gap of 0.7eV that can be tuned across the electromagnetic spectrum by adjusting composition. Additionally, it has a smooth band gap curve and can be easily made into layers due to its tolerance for mismatched lattice systems. However, it also has disadvantages like being difficult to dope to create p-type material and containing billions of defects per square centimeter.
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Indium gallium-nitride
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- 2. Characteristics of IndiumGallium Nitride • Semi Conductor Material • high heat capacity • mix of gallium nitride (GaN) and indium nitride (InN) • Defect Rich
- 3. Band Gap • BetweenValence and Conduction bands. • Electrons may jump from valence to conduction band if supplied with specific energy. • This specific energy is unique for all materials. Conductor Band
- 4. Lab Discovery •Semiconductor IndiumNitride band gap re-measured and found to be 0.7eV instead of 2.0eV. •By Adjusting the composition %’s it can be tuned to any part of the electromagnetic spectrum.
- 5. Advantages / Disadvantages Disadvantages •Difficultto dope to create p-type material •Billions of defects per square centimeter. Advantages •Low Band gap (o.7eV) •Smooth gap-curve when adjusting alloy composition. • Easily made into layers (very tolerant to mismatched lattice systems)
- 6. Advantages / Disadvantages Disadvantages •Difficultto dope to create p-type material •Billions of defects per square centimeter. Advantages •Low Band gap (o.7eV) •Smooth gap-curve when adjusting alloy composition. • Easily made into layers (very tolerant to mismatched lattice systems)
Editor's Notes
- #4 The band gap is the energy difference between the top of the valence band and the bottom of the conduction band. If electrons in the valence band receive the correct amount of energy, they may jump to the conduction band. In the conductive band, electrons can be accelerated by an electric field to produce an electric current.
- #5 Berkley National Laboratory, Crystal growing teams at Cornell, and Ritsumeikan University. Band gap of Indium Nitride found to be 0.7 eV instead of 2.0 eV By adjusting the composition percentages of Indium Gallium Nitride, the correct band gap can be tuned to any part of the electromagnetic spectrum and by creating multiple layers of different compositions, solar panels can be engineered to collect the maximum amount of Energy.