2. Characteristics of Indium Gallium
Nitride
• Semi Conductor Material
• high heat capacity
• mix of gallium nitride (GaN) and indium
nitride (InN)
• Defect Rich
3. Band Gap
• Between Valence and
Conduction bands.
• Electrons may jump from
valence to conduction band if
supplied with specific energy.
• This specific energy is unique
for all materials.
Conductor Band
4. Lab Discovery
•Semiconductor Indium Nitride band
gap re-measured and found to be
0.7eV instead of 2.0eV.
•By Adjusting the composition %’s it
can be tuned to any part of the
electromagnetic spectrum.
5. Advantages / Disadvantages
Disadvantages
•Difficult to dope to create
p-type material
•Billions of defects per
square centimeter.
Advantages
•Low Band gap (o.7eV)
•Smooth gap-curve when
adjusting alloy composition.
• Easily made into layers
(very tolerant to
mismatched lattice
systems)
6. Advantages / Disadvantages
Disadvantages
•Difficult to dope to create
p-type material
•Billions of defects per
square centimeter.
Advantages
•Low Band gap (o.7eV)
•Smooth gap-curve when
adjusting alloy composition.
• Easily made into layers
(very tolerant to
mismatched lattice
systems)
Editor's Notes
The band gap is the energy difference between the top of the valence band and the bottom of the conduction band. If electrons in the valence band receive the correct amount of energy, they may jump to the conduction band. In the conductive band, electrons can be accelerated by an electric field to produce an electric current.
Berkley National Laboratory, Crystal growing teams at Cornell, and Ritsumeikan University. Band gap of Indium Nitride found to be 0.7 eV instead of 2.0 eV By adjusting the composition percentages of Indium Gallium Nitride, the correct band gap can be tuned to any part of the electromagnetic spectrum and by creating multiple layers of different compositions, solar panels can be engineered to collect the maximum amount of Energy.