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RFIC
2015
1
DelfMEMS
Next Generation RF Switching
Solution for 3G/4G
Enabling High Speed Information -
to anyone, anywhere, anyhow, anytime
RFIC
2015
2
Power Loss in 4G Handsets
Focus of this presentation is on handset power
loss experienced with LTE wireless technology
Power loss is observed through different aspects
of mobile phone performance degradation and
from the reduction of mobile battery life point
of view
RFIC
2015
3
Cellular Standards Evolution
Marketing
Evolution
4G
3.9G
3.5G
3G
2.5G
2G
Channel
Bandwidth
PDC (Japan) GSM (Europe) IS-136/AMPS (US TDMA) IS-95A (US CDMA)
iMODE HSCSD GPRS IS-95B (US CDMA)
WCDMA (FDD & TDD) TD-SCDMA (China) E-GPRS (EDGE) cdma2000 (1xRTT)
HSDPA HSUPA UMTS-TDD 1x EV-DO (1xRTT)
HSPA+, E-HSPA LTE (R8,9, FDD & TDD) 802.16e (Mobile WiMAX)
LTE-Advanced
(R10,11,12+, FDD & TDD)
802.16m / WiMAX2
(WirelessMAN-Advanced)
EDGE Evolution
WiBRO
(Korea)
Marketing
Evolution
1.2288 MHz
200 KHz
5 MHz
1.4, 3, 5, 10, 20
MHz
5 MHz
up to 100 MHz
RFIC
2015
4
Data Speed Revolution
4G
3.9G
3.5G
3G
2.5G
2G PDC (Japan), GSM (Europe), IS-136/AMPS (US TDMA), IS-95A (US CDMA)
Max Data Speed: DL 14.4kbps, UL 14.4kbps
iMODE, HSCSD, GPRS, IS-95B (US CDMA)
Max Data Speed: DL 85.6kbps, UL 42.8kbps
WCDMA (FDD & TDD), TD-SCDMA (China), E-GPRS (EDGE), cdma2000 (1xRTT)
Max Data Speed: DL 2Mbps, UL 2Mbps
HSDPA, HSUPA, EDGE Evolution, UMTS-TDD, EV-DO (Rev. B)
Max Data Speed: DL 16Mbps, UL 16Mbps
HSPA+, E-HSPA, LTE (R8,9, FDD & TDD), 802.16e (Mobile WiMAX)
Max Data Speed: DL 100Mbps, UL 50Mbps
LTE-Advanced (R10,11,12+, FDD & TDD), 802.16m/WiMAX2 (WirelessMAN-Advanced)
Max Data Speed: DL 1Gbps (target 3Gbps), UL 500Mbps (target 1Gbps)
DL – Down Link (UE Receive)
UL – Up Link (UE Transmit)
Channel
Bandwidth
1.2288 MHz
200 KHz
5 MHz
1.4, 3, 5, 10, 20
MHz
5 MHz
up to 100 MHz
RFIC
2015
5
LTE Categories
** 2x1 DL (Rx) MIMO assumed for all LTE categories, except for Cat5
*** LTE Cat5 not implemented due to the MIMO 4x2 requirement
Categories LTE Cat1 LTE Cat2 LTE Cat3 LTE Cat4 LTE Cat5 LTE Cat6
Data Rates
DL 10 Mbps 50 Mbps 100 Mbps 150 Mbps 300 Mbps 300 Mbps
UL 5 Mbps 25 Mbps 50 Mbps 50 Mbps 75 Mbps 50 Mbps
Channel
Bandwidth
DL 20 MHz 20 MHz 20 MHz 20 MHz (CA) 20 MHz 40 MHz (CA)
UL 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
MIMO
Configuration **
Not sup. 2x1 2x1 2x1 4x2 2x1
Implementation 2013 NA *** 2014
RFIC
2015
6
LTE Evolution
• LTE Cat6 300Mbps/50Mbps not even close to
customer needs and market requirements
• Peak data rate target for the most recent LTE-
Advanced technology starts at 1Gbps for Up
Link connections
• Even this is just a first step and target that will
have to be improved rapidly and constantly
RFIC
2015
7
Data Rate Speed (R)Evolution
Today FUTURE
(LTE Cat9)
450 Mbps RX peak data rates
with LTE 3x20MHz CA
deployments
50 Mbps TX peak data rates
Enabling the 1000x mobile
data challenge
(source: Qualcomm)
• More spectrum
• 3.5GHz Bands introduction
• 5GHz Bands introduction
• 100 MHz RX carrier aggregation
• TDD + FDD aggregation
• TX Diversity Path introduction
• TX Carrier Aggregation
MEMS advantage
MEMS advantage
MEMS advantage
MEMS advantage
MEMS advantage
RFIC
2015
8
RF Front End (FE)
• Explosion of LTE band
numbers
– Increased complexity
– Mobile handset market
price erosion pressure
• RF FE architecture design
for smartphones
becomes exceptionally
challenging
MIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope Tracking
Modulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSM
PA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
RFIC
2015
9
RF Components Challenges
• Power loss (insertion loss)
• Isolation
• Linearity intermodulation and cross
modulation
• Components frequency response
RFIC
2015
10
RF FE and Battery Life
• Battery life is the
most important
consideration for
over 70% of users
(IWPC conference year 2014)
IDC consumer space 360 (May 2014 survey)
RFIC
2015
11
PA’s Dominate Battery Drain
• LTE is not good
for your battery….
– LTE network
typically require
short bursts of
high RF Power for
data transmission 0
50
100
150
200
250
300
350
0
2
4
6
8
10
12
14
-50 -40 -30 -20 -10 0 10 20
Probability
[%]
Transmit Power Level [dBm]
WCDMA Handset Transmit Power Distribution
Current Drain
[mA]
RFIC
2015
12
RF Switch as a Solution
• Industry standard
assessment of RF
switches:
Figure of Merit
(Ron * Coff )
264
448
485
250
270
224
207
160
113
8
192
0
100
200
300
400
500
600
0.6 0.8 1 1.2 1.4 1.6 1.8 2
DelfMEMS
Single Gate
Triple Gate
STM
Next Gen STM
0.18um
Thin-film
0.18um
Thick-film
0.35um
0.25um
FoM
Ron
Peregrine UltraCMOS
Infineon
CMOS
pHEMT GaAs technology
SOS technology
SOI technology
CMOS technology
RF MEMS technology
RFIC
2015
13
RF MEMS Switch Benefit
-1.6
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
InsertionLoss[dB]
Frequency [MHz]
SP12T Switch Insertion Loss
DelfMEMS
Solid State
RFIC
2015
14
Talk Time
• DelfMEMS RF MEMS switch
compared to existing SOI
antenna switch
• Current savings across bands
equivalent to percentages of
longer talk time
RF MEMS Antenna Switch gives
up to 17% increased battery life
= Longer Talk Time MIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope Tracking
Modulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSM
PA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
B 7,40,41… SOI RF MEMS Current
IL [dB] -1 -0.35 Savings
CDL 21% 8% 13%
B 1,2,3,4… SOI RF MEMS Current
IL [dB] -1.2 -0.3 Savings
CDL 24% 7% 17%
B 5,8… SOI RF MEMS Current
IL [dB] -0.9 -0.25 Savings
CDL 19% 6% 13%
B 13,17… SOI RF MEMS Current
IL [dB] -0.85 -0.25 Savings
CDL 18% 6% 12%
RFIC
2015
15
Data Throughput
• Decreased RF FE Insertion
Loss will improve Rx
Sensitivity by the same
amount
• Both Main and Diversity
Antenna Switch IL are
compared between SOI and
RF MEMS Switch
RF MEMS Antenna Switch gives
nearly 30% Rx sensitivity
improvement = Better Call
Quality
MIPI RFFE
Serial Control
Master
Diversity
Antenna Port
Diversity
RX LNAs
RFIC
Main
RX LNAs
RFIC
TX FE
RFFE
Control
Interface
Diversity
FEM
SPnT
SPnT
mipi RFFE
mipi RFFE
High
Bands
FEMid
mipi RFFE
mipi RFFE
Envelope Tracking
Modulator
VPA
...mipi RFFE
mipi RFFE
PA
mipi RFFE
VHF 4G PAM
SPnT
mipi RFFE
mipi RFFE
SPnT
mipi RFFE
Main
Antenna Port
PA
3G/4G
HB
mipi RFFE
SPnT
PA
3G/4G
LB
GSM
PA
PA
MMMB
PAM
SPnT
mipi RFFE
mipi RFFE
Antenna
Tuner
MIPI RFFE
SPnT
SPnT
B 7,40,41… SOI RF MEMS RxSI
IL [dB] -1 -0.35 16%
B 13,17… SOI RF MEMS RxSI
IL [dB] -0.85 -0.25 15%
B 5,8… SOI RF MEMS RxSI
IL [dB] -0.9 -0.25 16%
B 2,3… SOI RF MEMS RxSI
IL [dB] -1.2 -0.3 23%
B 1,4… SOI RF MEMS RxSI
IL [dB] -1.4 -0.3 29%
B 1,2,3, 4… SOI RF MEMS RxSI
IL [dB] -1.4 -0.3 29%
B 5,8… SOI RF MEMS RxSI
IL [dB] -0.9 -0.25 16%
RFIC
2015
16
Conclusion
• LTE-A main market driver
– Higher Down-Link & Up-Link Data Speed …
• Comes with a cost …
Less battery life and degraded signal reception quality
• RF MEMS switches offer the best solution
– Reduction of RF FE losses
– Broadband design for high frequency bands
– High linearity design for UL CA
– Exceptional band-to-band and TX /RX Isolation

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IMS2015_DelfMEMS_final

  • 1. RFIC 2015 1 DelfMEMS Next Generation RF Switching Solution for 3G/4G Enabling High Speed Information - to anyone, anywhere, anyhow, anytime
  • 2. RFIC 2015 2 Power Loss in 4G Handsets Focus of this presentation is on handset power loss experienced with LTE wireless technology Power loss is observed through different aspects of mobile phone performance degradation and from the reduction of mobile battery life point of view
  • 3. RFIC 2015 3 Cellular Standards Evolution Marketing Evolution 4G 3.9G 3.5G 3G 2.5G 2G Channel Bandwidth PDC (Japan) GSM (Europe) IS-136/AMPS (US TDMA) IS-95A (US CDMA) iMODE HSCSD GPRS IS-95B (US CDMA) WCDMA (FDD & TDD) TD-SCDMA (China) E-GPRS (EDGE) cdma2000 (1xRTT) HSDPA HSUPA UMTS-TDD 1x EV-DO (1xRTT) HSPA+, E-HSPA LTE (R8,9, FDD & TDD) 802.16e (Mobile WiMAX) LTE-Advanced (R10,11,12+, FDD & TDD) 802.16m / WiMAX2 (WirelessMAN-Advanced) EDGE Evolution WiBRO (Korea) Marketing Evolution 1.2288 MHz 200 KHz 5 MHz 1.4, 3, 5, 10, 20 MHz 5 MHz up to 100 MHz
  • 4. RFIC 2015 4 Data Speed Revolution 4G 3.9G 3.5G 3G 2.5G 2G PDC (Japan), GSM (Europe), IS-136/AMPS (US TDMA), IS-95A (US CDMA) Max Data Speed: DL 14.4kbps, UL 14.4kbps iMODE, HSCSD, GPRS, IS-95B (US CDMA) Max Data Speed: DL 85.6kbps, UL 42.8kbps WCDMA (FDD & TDD), TD-SCDMA (China), E-GPRS (EDGE), cdma2000 (1xRTT) Max Data Speed: DL 2Mbps, UL 2Mbps HSDPA, HSUPA, EDGE Evolution, UMTS-TDD, EV-DO (Rev. B) Max Data Speed: DL 16Mbps, UL 16Mbps HSPA+, E-HSPA, LTE (R8,9, FDD & TDD), 802.16e (Mobile WiMAX) Max Data Speed: DL 100Mbps, UL 50Mbps LTE-Advanced (R10,11,12+, FDD & TDD), 802.16m/WiMAX2 (WirelessMAN-Advanced) Max Data Speed: DL 1Gbps (target 3Gbps), UL 500Mbps (target 1Gbps) DL – Down Link (UE Receive) UL – Up Link (UE Transmit) Channel Bandwidth 1.2288 MHz 200 KHz 5 MHz 1.4, 3, 5, 10, 20 MHz 5 MHz up to 100 MHz
  • 5. RFIC 2015 5 LTE Categories ** 2x1 DL (Rx) MIMO assumed for all LTE categories, except for Cat5 *** LTE Cat5 not implemented due to the MIMO 4x2 requirement Categories LTE Cat1 LTE Cat2 LTE Cat3 LTE Cat4 LTE Cat5 LTE Cat6 Data Rates DL 10 Mbps 50 Mbps 100 Mbps 150 Mbps 300 Mbps 300 Mbps UL 5 Mbps 25 Mbps 50 Mbps 50 Mbps 75 Mbps 50 Mbps Channel Bandwidth DL 20 MHz 20 MHz 20 MHz 20 MHz (CA) 20 MHz 40 MHz (CA) UL 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz MIMO Configuration ** Not sup. 2x1 2x1 2x1 4x2 2x1 Implementation 2013 NA *** 2014
  • 6. RFIC 2015 6 LTE Evolution • LTE Cat6 300Mbps/50Mbps not even close to customer needs and market requirements • Peak data rate target for the most recent LTE- Advanced technology starts at 1Gbps for Up Link connections • Even this is just a first step and target that will have to be improved rapidly and constantly
  • 7. RFIC 2015 7 Data Rate Speed (R)Evolution Today FUTURE (LTE Cat9) 450 Mbps RX peak data rates with LTE 3x20MHz CA deployments 50 Mbps TX peak data rates Enabling the 1000x mobile data challenge (source: Qualcomm) • More spectrum • 3.5GHz Bands introduction • 5GHz Bands introduction • 100 MHz RX carrier aggregation • TDD + FDD aggregation • TX Diversity Path introduction • TX Carrier Aggregation MEMS advantage MEMS advantage MEMS advantage MEMS advantage MEMS advantage
  • 8. RFIC 2015 8 RF Front End (FE) • Explosion of LTE band numbers – Increased complexity – Mobile handset market price erosion pressure • RF FE architecture design for smartphones becomes exceptionally challenging MIPI RFFE Serial Control Master Diversity Antenna Port Diversity RX LNAs RFIC Main RX LNAs RFIC TX FE RFFE Control Interface Diversity FEM SPnT SPnT mipi RFFE mipi RFFE High Bands FEMid mipi RFFE mipi RFFE Envelope Tracking Modulator VPA ...mipi RFFE mipi RFFE PA mipi RFFE VHF 4G PAM SPnT mipi RFFE mipi RFFE SPnT mipi RFFE Main Antenna Port PA 3G/4G HB mipi RFFE SPnT PA 3G/4G LB GSM PA PA MMMB PAM SPnT mipi RFFE mipi RFFE Antenna Tuner MIPI RFFE SPnT SPnT
  • 9. RFIC 2015 9 RF Components Challenges • Power loss (insertion loss) • Isolation • Linearity intermodulation and cross modulation • Components frequency response
  • 10. RFIC 2015 10 RF FE and Battery Life • Battery life is the most important consideration for over 70% of users (IWPC conference year 2014) IDC consumer space 360 (May 2014 survey)
  • 11. RFIC 2015 11 PA’s Dominate Battery Drain • LTE is not good for your battery…. – LTE network typically require short bursts of high RF Power for data transmission 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 -50 -40 -30 -20 -10 0 10 20 Probability [%] Transmit Power Level [dBm] WCDMA Handset Transmit Power Distribution Current Drain [mA]
  • 12. RFIC 2015 12 RF Switch as a Solution • Industry standard assessment of RF switches: Figure of Merit (Ron * Coff ) 264 448 485 250 270 224 207 160 113 8 192 0 100 200 300 400 500 600 0.6 0.8 1 1.2 1.4 1.6 1.8 2 DelfMEMS Single Gate Triple Gate STM Next Gen STM 0.18um Thin-film 0.18um Thick-film 0.35um 0.25um FoM Ron Peregrine UltraCMOS Infineon CMOS pHEMT GaAs technology SOS technology SOI technology CMOS technology RF MEMS technology
  • 13. RFIC 2015 13 RF MEMS Switch Benefit -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 InsertionLoss[dB] Frequency [MHz] SP12T Switch Insertion Loss DelfMEMS Solid State
  • 14. RFIC 2015 14 Talk Time • DelfMEMS RF MEMS switch compared to existing SOI antenna switch • Current savings across bands equivalent to percentages of longer talk time RF MEMS Antenna Switch gives up to 17% increased battery life = Longer Talk Time MIPI RFFE Serial Control Master Diversity Antenna Port Diversity RX LNAs RFIC Main RX LNAs RFIC TX FE RFFE Control Interface Diversity FEM SPnT SPnT mipi RFFE mipi RFFE High Bands FEMid mipi RFFE mipi RFFE Envelope Tracking Modulator VPA ...mipi RFFE mipi RFFE PA mipi RFFE VHF 4G PAM SPnT mipi RFFE mipi RFFE SPnT mipi RFFE Main Antenna Port PA 3G/4G HB mipi RFFE SPnT PA 3G/4G LB GSM PA PA MMMB PAM SPnT mipi RFFE mipi RFFE Antenna Tuner MIPI RFFE SPnT SPnT B 7,40,41… SOI RF MEMS Current IL [dB] -1 -0.35 Savings CDL 21% 8% 13% B 1,2,3,4… SOI RF MEMS Current IL [dB] -1.2 -0.3 Savings CDL 24% 7% 17% B 5,8… SOI RF MEMS Current IL [dB] -0.9 -0.25 Savings CDL 19% 6% 13% B 13,17… SOI RF MEMS Current IL [dB] -0.85 -0.25 Savings CDL 18% 6% 12%
  • 15. RFIC 2015 15 Data Throughput • Decreased RF FE Insertion Loss will improve Rx Sensitivity by the same amount • Both Main and Diversity Antenna Switch IL are compared between SOI and RF MEMS Switch RF MEMS Antenna Switch gives nearly 30% Rx sensitivity improvement = Better Call Quality MIPI RFFE Serial Control Master Diversity Antenna Port Diversity RX LNAs RFIC Main RX LNAs RFIC TX FE RFFE Control Interface Diversity FEM SPnT SPnT mipi RFFE mipi RFFE High Bands FEMid mipi RFFE mipi RFFE Envelope Tracking Modulator VPA ...mipi RFFE mipi RFFE PA mipi RFFE VHF 4G PAM SPnT mipi RFFE mipi RFFE SPnT mipi RFFE Main Antenna Port PA 3G/4G HB mipi RFFE SPnT PA 3G/4G LB GSM PA PA MMMB PAM SPnT mipi RFFE mipi RFFE Antenna Tuner MIPI RFFE SPnT SPnT B 7,40,41… SOI RF MEMS RxSI IL [dB] -1 -0.35 16% B 13,17… SOI RF MEMS RxSI IL [dB] -0.85 -0.25 15% B 5,8… SOI RF MEMS RxSI IL [dB] -0.9 -0.25 16% B 2,3… SOI RF MEMS RxSI IL [dB] -1.2 -0.3 23% B 1,4… SOI RF MEMS RxSI IL [dB] -1.4 -0.3 29% B 1,2,3, 4… SOI RF MEMS RxSI IL [dB] -1.4 -0.3 29% B 5,8… SOI RF MEMS RxSI IL [dB] -0.9 -0.25 16%
  • 16. RFIC 2015 16 Conclusion • LTE-A main market driver – Higher Down-Link & Up-Link Data Speed … • Comes with a cost … Less battery life and degraded signal reception quality • RF MEMS switches offer the best solution – Reduction of RF FE losses – Broadband design for high frequency bands – High linearity design for UL CA – Exceptional band-to-band and TX /RX Isolation