w505 Rapid Fire v8
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This document discusses DelfMEMS, a fabless RF MEMS company founded in 2006. It provides an overview of the company's background, funding, headcount, and production plans. The rest of the document outlines how DelfMEMS' RF MEMS switch technology can provide advantages over existing SOI antenna switches, including longer talk time through reduced current draw, better call quality through increased receive sensitivity, and enabling higher uplink carrier aggregation requirements through its very high linearity.
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w505 Rapid Fire v8
- 1. Confidential - Page 1150203 Enabling High Speed Information to anyone, anywhere, anyhow, anytime
- 2. Confidential - Page 2 DelfMEMS At A Glance Fabless RF MEMS company Founded 2006, HQ and R&D France 6” foundry in USA, moving to 8” 2016 Funding $23M to date Headcount 28 8 PhD’s in MEMS & RF Production 2H 2016 DelfMEMS representatives DelfMEMS representatives DelfMEMS Headquarter & lab DelfMEMS Business Activities
- 3. Confidential - Page 3 LTE-AData Rate Speed (R)Evolution Today FUTURE (LTE Cat6) 300 Mbps RX peak data rates with LTE 20MHz+20MHz CA deployments 50 Mbps TX peak data rates Enabling the 1000x mobile data challenge (source: Qualcomm) • More spectrum • 3.5GHz Bands introduction • 5GHz Bands introduction • 100 MHz RX carrier aggregation • TDD + FDD aggregation • TX Diversity Path introduction • TX Carrier Aggregation MEMS advantage MEMS advantage MEMS advantage MEMS advantage MEMS advantage
- 4. Confidential - Page 4 DelfMEMS RF MEMS Switch: Key Features Ultra-High Linearity – 85dBm up to 99dBm Ultra-Low Insertion Loss – 0.35dB @ 3.5GHz Very High Port-to-Port Isolation – 35dB @ 3.5GHz Wide Operating Frequency – DC to 20GHz
- 5. Confidential - Page 5 Talk Time MIPI RFFE Serial Control Master Diversity Antenna Port Diversity RX LNAs RFIC Main RX LNAs RFIC TX FE RFFE Control Interface Diversity FEM SPnT SPnT mipi RFFE mipi RFFE High Bands FEMid mipi RFFE mipi RFFE Envelope Tracking Modulator VPA ...mipi RFFE mipi RFFE PA mipi RFFE VHF 4G PAM SPnT mipi RFFE mipi RFFE SPnT mipi RFFE Main Antenna Port PA 3G/4G HB mipi RFFE SPnT PA 3G/4G LB GSM PA PA MMMB PAM SPnT mipi RFFE mipi RFFE Antenna Tuner MIPI RFFE SPnT SPnT B 7,40,41… SOI RF MEMS Current IL [dB] -1 -0.35 Savings CDL 21% 8% 13% B 1,2,3,4… SOI RF MEMS Current IL [dB] -1.2 -0.3 Savings CDL 24% 7% 17% B 5,8… SOI RF MEMS Current IL [dB] -0.9 -0.25 Savings CDL 19% 6% 13% B 13,17… SOI RF MEMS Current IL [dB] -0.85 -0.25 Savings CDL 18% 6% 12% DelfMEMS RF MEMS switch compared to existing SOI antenna switch Current savings across bands equivalent to percentages of longer talk time RF MEMS Antenna Switch gives up to 17% increased battery life = Longer Talk Time
- 6. Confidential - Page 6 Data Throughput MIPI RFFE Serial Control Master Diversity Antenna Port Diversity RX LNAs RFIC Main RX LNAs RFIC TX FE RFFE Control Interface Diversity FEM SPnT SPnT mipi RFFE mipi RFFE High Bands FEMid mipi RFFE mipi RFFE Envelope Tracking Modulator VPA ...mipi RFFE mipi RFFE PA mipi RFFE VHF 4G PAM SPnT mipi RFFE mipi RFFE SPnT mipi RFFE Main Antenna Port PA 3G/4G HB mipi RFFE SPnT PA 3G/4G LB GSM PA PA MMMB PAM SPnT mipi RFFE mipi RFFE Antenna Tuner MIPI RFFE SPnT SPnT B 7,40,41… SOI RF MEMS RxSI IL [dB] -1 -0.35 16% Decreased RF FE Insertion Loss will improve Rx Sensitivity by the same amount Both Main and Diversity Antenna Switch IL are compared between SOI and RF MEMS Switch RF MEMS Antenna Switch gives nearly 30% Rx sensitivity improvement = Better Call Quality B 13,17… SOI RF MEMS RxSI IL [dB] -0.85 -0.25 15% B 5,8… SOI RF MEMS RxSI IL [dB] -0.9 -0.25 16% B 2,3… SOI RF MEMS RxSI IL [dB] -1.2 -0.3 23% B 1,4… SOI RF MEMS RxSI IL [dB] -1.4 -0.3 29% B 1,2,3, 4… SOI RF MEMS RxSI IL [dB] -1.4 -0.3 29% B 5,8… SOI RF MEMS RxSI IL [dB] -0.9 -0.25 16%
- 7. Confidential - Page 7 Uplink CA Very High Linearity Is A Must Each next generation cellular network requires progressively higher linearity 3GPP industry standard determines the linearity (IIP3) required to avoid network device interference Solid State Switch level of IIP3 today is at or less than 75dBm RF MEMS is the best solution for high performance LTE-A, with better call quality, longer battery life & enabling 90dBm requirement for UL CA Network Linearity (IIP3) 2G 55 dBm 3G 65 dBm 3.9G 72 dBm 4G ≈ 90 dBm Source: Intel Mobile Corporation (2012)
- 8. Confidential - Page 8 Thank You Igor Lalicevic RF Director