This document presents a device modeling report for the silicon carbide Schottky diode IDT02S60C by Infineon, detailing circuit configurations and parameters. It includes simulation results for forward current, reverse current, and junction capacitance, alongside comparison tables and graphs illustrating measurement versus simulation data. The report emphasizes accuracy in measurements with accompanying error percentages for various voltage and current values.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT02S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT02S60C
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT02S60C
0
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5. Comparison Graph
Circuit Simulation result
3
Measurement
Simulation
Forword Current, IF (A)
2
1
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 1.000 0.975 -2.50
0.2 1.040 1.028 -1.15
0.5 1.160 1.160 0.00
1 1.355 1.358 0.22
2 1.730 1.735 0.29
3 2.100 2.106 0.29
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT02S60C
0
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7. Comparison Graph
Circuit Simulation result
1.E+01
Measurement
Simulation
1.E+00
Reverse Current, IR (A)
1.E-01
1.E-02
1.E-03
1.E-04
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.300E-03 1.316E-03 1.23
200 2.700E-03 2.730E-03 1.11
500 5.830E-02 6.100E-02 4.63
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8. Junction Capacitance Characteristic
Circuit Simulation result
60p
55p
50p
45p
40p
35p
30p
25p
20p
15p
10p
5p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDT02S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
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9. Comparison Graph
Circuit Simulation result
60
Measurement
Simulation
45
Capacitance, C (pF)
30
15
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 59.500 58.389 -1.87
2 52.000 52.339 0.65
5 41.000 41.132 0.32
10 32.000 31.890 -0.34
20 24.000 23.731 -1.12
50 16.250 15.928 -1.98
100 12.400 12.143 -2.07
200 9.400 9.682 3.00
500 8.000 7.753 -3.09
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