SPICE MODEL of IDD12SG60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDD12SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDD12SG60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDD12SG60C
0
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5. Comparison Graph
Circuit Simulation result
20
Measurement
Simulation
15
Forword Current, IF (A)
10
5
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.990 0.993 0.30
1 1.060 1.055 -0.47
2 1.170 1.162 -0.68
5 1.450 1.451 0.07
10 1.900 1.911 0.58
20 2.820 2.814 -0.21
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDD12SG60C
0
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7. Comparison Graph
Circuit Simulation result
10
Measurement
Simulation
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
200 1.900E-03 1.819E-03 -4.26
400 2.000E-02 2.066E-02 3.30
600 8.500E-01 8.134E-01 -4.31
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8. Junction Capacitance Characteristic
Circuit Simulation result
400p
350p
300p
250p
200p
150p
100p
50p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD12SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
400
Measurement
350 Simulation
300
Capacitance, C (pF)
250
200
150
100
50
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 343.000 345.786 0.81
1 311.052 314.393 1.07
2 269.052 270.731 0.62
5 205.126 200.504 -2.25
10 156.526 151.178 -3.42
20 117.052 113.076 -3.40
50 78.947 81.049 2.66
100 64.852 67.225 3.66
200 56.836 58.973 3.76
500 52.631 53.103 0.90
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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