This document summarizes the modeling of a silicon carbide Schottky diode. It provides the part number, manufacturer, and model parameters. Simulation results show the forward and reverse current characteristics match measurements to within 5%. Junction capacitance simulations match measurements to within 5% for voltages under 200V.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDD04SG60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
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2. Circuit Configuration
U1
IDD04SG60C
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDD04SG60C
0
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 0.932 0.910 -2.31
0.2 1.000 0.957 -4.28
0.5 1.085 1.068 -1.58
1 1.254 1.230 -1.94
2 1.542 1.537 -0.37
5 2.424 2.427 0.12
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDD04SG60C
0
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7. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.655E-03 1.726E-03 4.29
200 3.700E-03 3.683E-03 -0.47
300 8.979E-03 9.388E-03 4.56
400 2.550E-02 2.638E-02 3.44
500 7.900E-02 7.737E-02 -2.06
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8. Junction Capacitance Characteristic
Circuit Simulation result
80p
70p
60p
50p
40p
30p
20p
10p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDD04SG60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
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9. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 79.44 78.308 -1.43
2 69.00 70.101 1.60
5 53.89 54.639 1.39
10 42.50 42.366 -0.32
20 32.50 31.518 -3.02
50 22.00 21.266 -3.34
100 16.20 16.316 0.72
200 12.50 13.098 4.78
500 11.00 10.590 -3.73
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