SPICE MODEL of CSD04060B (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: CSD04060B
MANUFACTURER: Cree, Inc.
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic
Circuit Simulation Result
8.0A
6.0A
4.0A
2.0A
0A
0V 1.0V 2.0V 3.0V
I(R1)
V_V1
Evaluation Circuit
CSD04060B
R1 U4
PIN3
CASE
0.01m
PIN2
NC
V1
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Comparison Graph
Circuit Simulation Result
Simulation Result
VF(V)
IF(A) Error(%)
Measurement Simulation
0.1 0.940 0.938 -0.213
0.2 0.970 0.975 0.513
0.5 1.030 1.028 -0.195
1 1.100 1.110 0.901
2 1.250 1.245 -0.402
5 1.650 1.648 -0.121
8 2.050 2.070 0.966
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Junction Capacitance Characteristic
Circuit Simulation Result
150p
100p
50p
0
3.0V 10V 100V 400V
I(V2)/(600V/1us)
V(N00016)
Evaluation Circuit
NC
0Vdc V2
PIN2
CASE
PIN3
V2 = 600 V1
V1 = 0
TD = 0
TR = 1us
TF = 10ns
PW = 50us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj (pF)
VR(V) Error(%)
Measurement Simulation
3 141.000 141.400 0.283
5 122.000 121.700 -0.247
10 95.000 95.200 0.210
20 72.000 72.130 0.180
50 48.000 48.500 1.031
100 36.000 35.700 -0.840
200 26.000 25.980 -0.077
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Reverse Characteristic
Circuit Simulation Result
100uA
80uA
60uA
40uA
20uA
0A
0V 200V 400V 600V
I(R1)
V_V1
Evaluation Circuit
NC
R1
PIN2
CASE
0.01m
PIN3
U4
V1 CSD04060B
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Comparison Graph
Circuit Simulation Result
Simulation Result
VR(V)
IR(uA) Error(%)
Measurement Simulation
1 438.000 438.200 0.046
2 468.000 472.000 0.847
5 518.000 523.000 0.956
10 556.000 560.000 0.714
20 595.000 600.000 0.833
50 645.000 649.000 0.616
80 672.000 675.000 0.444
100 683.000 687.000 0.582
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005