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Device Modeling Report




COMPONENTS: Schottky Barrier Diode
PART NUMBER: CUS520
MANUFACTURER: TOSHIBA
REMARK: Professional Model




                Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                  1
Circuit Configuration


          U1
          CUS520_P




DIODE MODEL PARAMETERS
   PSpice
    model                                Model description
  parameter
      IS         Saturation Current
      N          Emission Coefficient
      RS         Series Resistance
     IKF         High-injection Knee Current
     CJO         Zero-bias Junction Capacitance
      M          Junction Grading Coefficient
      VJ         Junction Potential
     ISR         Recombination Current Saturation Value
      BV         Reverse Breakdown Voltage(a positive value)
     IBV         Reverse Breakdown Current(a positive value)
      TT         Transit Time
     EG          Energy-band Gap




              All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                             2
Forward Current Characteristics

Circuit Simulation result



                1.0A



              100mA



                10mA



              1.0mA



              100uA



                10uA



              1.0uA
                       0V    50mV   150mV    250mV          350mV    450mV     550mV
                            I(R1)
                                                     V_V1




Evaluation circuit


                                            R1

                                            0.01m

                                    V1                              U1
                                                                    CUS520_P




                                    0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                       3
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
              IF (mA)                                                       %Error
                                Measurement           Simulation
                    0.001                0.058                 0.057              -2.23
                     0.01                0.106                 0.110              3.77
                        0.1              0.160                 0.165              3.13
                            1            0.222                 0.223              0.41
                            2            0.242                 0.242              0.00
                            5            0.274                 0.273              -0.36
                        10               0.310                 0.303              -2.26
                        20               0.358                 0.348              -2.79
                        50               0.448                 0.453              1.12




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Reverse Current Characteristic

Circuit Simulation result



             1.0mA




             100uA




               10uA




             1.0uA




             100nA
                      0V          5V        10V           15V    20V      25V        30V
                           I(U1:K)
                                                          V_V1




Evaluation circuit


                                                  R1

                                                  0.01m

                                       V1                         U1
                                                                  CUS520_P




                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           5
Comparison Graph

Circuit Simulation result




Comparison table


                                          IR (A)
              VR (V)                                                        %Error
                                Measurement       Simulation
                            2            0.320                 0.330              3.13
                            5            0.350                 0.348              -0.57
                       10                0.400                 0.386              -3.50
                       20                0.530                 0.505              -4.72
                       30                0.730                 0.726              -0.55




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          6
Junction Capacitance Characteristic

Circuit Simulation result



              100p




               10p




              1.0p
                     0V          5V       10V            15V    20V         25V     30V
                          I(V2)/(30V/100ns)
                                                         V(R)




Evaluation circuit

                                                    V2
                                            R

                                                    0

                               V1 = 0       V1                        U1
                               V2 = 30                                CUS520_P
                               TD = 0
                               TR = 100ns
                               TF = 1ns
                               PW = 0.5us
                               PER = 1us


                                                0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          7
Comparison Graph

Circuit Simulation result




Comparison table


                                             C (pF)
              VR (V)                                                        %Error
                                Measurement           Simulation
                            1            9.000                 8.970              -0.33
                            2            6.700                 6.900              2.99
                            5            4.500                 4.607              2.38
                       10                3.100                 3.220              3.87
                       20                2.320                 2.357              1.59
                       30                2.000                 1.928              -3.60




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          8

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SPICE MODEL of CUS520 (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Schottky Barrier Diode PART NUMBER: CUS520 MANUFACTURER: TOSHIBA REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. Circuit Configuration U1 CUS520_P DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Forward Current Characteristics Circuit Simulation result 1.0A 100mA 10mA 1.0mA 100uA 10uA 1.0uA 0V 50mV 150mV 250mV 350mV 450mV 550mV I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 CUS520_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (mA) %Error Measurement Simulation 0.001 0.058 0.057 -2.23 0.01 0.106 0.110 3.77 0.1 0.160 0.165 3.13 1 0.222 0.223 0.41 2 0.242 0.242 0.00 5 0.274 0.273 -0.36 10 0.310 0.303 -2.26 20 0.358 0.348 -2.79 50 0.448 0.453 1.12 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Reverse Current Characteristic Circuit Simulation result 1.0mA 100uA 10uA 1.0uA 100nA 0V 5V 10V 15V 20V 25V 30V I(U1:K) V_V1 Evaluation circuit R1 0.01m V1 U1 CUS520_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 2 0.320 0.330 3.13 5 0.350 0.348 -0.57 10 0.400 0.386 -3.50 20 0.530 0.505 -4.72 30 0.730 0.726 -0.55 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Junction Capacitance Characteristic Circuit Simulation result 100p 10p 1.0p 0V 5V 10V 15V 20V 25V 30V I(V2)/(30V/100ns) V(R) Evaluation circuit V2 R 0 V1 = 0 V1 U1 V2 = 30 CUS520_P TD = 0 TR = 100ns TF = 1ns PW = 0.5us PER = 1us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 1 9.000 8.970 -0.33 2 6.700 6.900 2.99 5 4.500 4.607 2.38 10 3.100 3.220 3.87 20 2.320 2.357 1.59 30 2.000 1.928 -3.60 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8