SPICE MODEL of GT20J321 (Professional+FWDP PSpice Model) in SPICE PARK

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SPICE MODEL of GT20J321 (Professional+FWDP PSpice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of GT20J321 (Professional+FWDP PSpice Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Insulated Gate Bipolar Transistor (IGBT)PART NUMBER: GT20J321MANUFACTURER: TOSHIBA*REMARK: Free-Wheeling Diode Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  2. 2. Circuit Configuration Collector Gate Emitter All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  3. 3. Transfer CharacteristicsCircuit Simulation result 40A 30A 20A 10A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGEEvaluation circuit U2 DGT20J321_P VCE 5Vdc VGE U1 15Vdc GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  4. 4. Comparison GraphSimulation resultComparison tableTest condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.300 6.355 0.87 2 6.600 6.551 -0.75 5 7.000 6.953 -0.68 10 7.450 7.427 -0.31 20 8.100 8.138 0.47 30 8.650 8.716 0.76 40 9.200 9.226 0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  5. 5. Fall Time CharacteristicsCircuit Simulation result 400V 300V 200V 100V 0V V(U1:C) 20V SEL>> 0V V(U1:G) 24A 16A 8A 0A 9.4us 9.8us 10.2us 10.6us 11.0us 11.4us I(U1:C) TimeEvaluation circuit U4 RG2 DGT20J321_P -VGE 15Vdc33 U3 L1 GT20J321 20mH 2 1 IC = 20 VCE 300 U2 Rg DGT20J321_P V1 = 0 V2 = 15 TD = 5u V1 33 TR = 10n U1 TF = 10n GT20J321 PW = 4.998u PER = 100u 0Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω) Parameter Unit Measurement Simulation %Error tf us 0.040 0.039 -3.555 tdoff us 0.240 0.245 2.109 toff us 0.340 0.348 2.226 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  6. 6. Gate Charge CharacteristicsCircuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:1) Time*1mAEvaluation circuit V2 0 IC U2 D2 DGT20J321_P Dbreak 20 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA U1 VCC TR = 10n ION = 0A GT20J321 TD = 0 I2 - 300 PER = 700m PW = 7m 0Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 22.000 21.585 -1.886 Qgc nc 38.000 37.248 -1.979 Qg nc 105.000 106.556 1.482 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  7. 7. Saturation CharacteristicsCircuit Simulation result 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-)Evaluation circuit U2 DGT20J321_P IC VGE U1 15Vdc GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  8. 8. Comparison GraphSimulation resultComparison tableTest condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.950 0.997 4.99 2 1.050 1.086 3.38 5 1.300 1.301 0.10 10 1.600 1.597 -0.18 20 2.050 2.053 0.14 30 2.400 2.398 -0.07 40 2.700 2.700 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  9. 9. Output CharacteristicsCircuit Simulation result 40A 20V 15V 9V 30A 20A 8V 10A VGE=7V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) VCEEvaluation circuit R1 0.001m CE PARAMETERS: U2 VCE VGE = 0 DGT20J321_P VGE U1 {VGE} GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  10. 10. FWD Forward Current CharacteristicsCircuit Simulation result 40A 30A 20A 10A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(Vsense) V(EC)Evaluation circuit Vsense V1 EC 0Vdc U2 0Vdc DGT20J321_P V2 U1 GT20J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  11. 11. Comparison GraphSimulation resultComparison table VF (V) IF(A) %Error Measurement Simulation 1 0.850 0.850 0.00 2 0.950 0.947 -0.29 5 1.110 1.115 0.47 10 1.300 1.298 -0.14 20 1.560 1.562 0.12 30 1.780 1.774 -0.33 40 1.960 1.963 0.17 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  12. 12. Reverse Recovery CharacteristicsCircuit Simulation result 20A 16A 12A 8A 4A 0A -4A -8A 4.9us 5.1us 5.3us 5.5us 5.7us 5.9us I(FWD) TimeEvaluation circuit L2 1 2 2.90uH U3 R1 DGT20J321_P 43 U4 GT20J321 -VGE FWD L1 15 20mH 2 1 C IC = 20 VCE 300 U2 Rg DGT20J321_P V1 = 0 V2 = 15 TD = 5u V1 33 TR = 10n U1 TF = 10n GT20J321 PW = 4.998u PER = 100u 0Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 112.303 2.090 Irr A 4.300 4.500 4.650 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12

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