SPICE MODEL of GT15M321 (Professional+FWDS LTspice Model) in SPICE PARK

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SPICE MODEL of GT15M321 (Professional+FWDS LTspice Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of GT15M321 (Professional+FWDS LTspice Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Insulated Gate Bipolar Transistor (IGBT)PART NUMBER: GT15M321MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  2. 2. Circuit Configuration All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  3. 3. Transfer CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  4. 4. Comparison GraphSimulation resultComparison tableTest condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 4.700 4.755 1.18 2 4.900 4.951 1.05 5 5.350 5.353 0.06 10 5.850 5.828 -0.38 15 6.250 6.207 -0.68 20 6.600 6.538 -0.94 25 6.950 6.838 -1.62 30 7.250 7.115 -1.86 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  5. 5. Fall Time CharacteristicsCircuit Simulation result TimeEvaluation circuitTest condition: IC=15 (A), VCC=600 (V), VGE=±15 (V), RG=100(Ω) Parameter Unit Measurement Simulation %Error tf us 0.200 0.207 3.391 toff us 0.500 0.498 -0.414 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  6. 6. Gate Charge CharacteristicsCircuit Simulation resultEvaluation circuitTest condition: VCC=150 (V), IC=15 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 11.000 10.957 -0.391 Qgc nc 27.000 26.783 -0.804 Qg nc 71.000 73.324 3.273 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  7. 7. Saturation CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  8. 8. Comparison GraphSimulation resultComparison tableTest condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 1.350 1.360 0.71 2 1.430 1.425 -0.37 5 1.580 1.570 -0.61 10 1.750 1.750 0.00 15 1.880 1.890 0.52 20 2.010 2.013 0.13 25 2.150 2.138 -0.55 30 2.280 2.285 0.21 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  9. 9. Output CharacteristicsCircuit Simulation result 20V 15V 10V 8V VGE=7VEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  10. 10. FWD Forward Current CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  11. 11. Comparison GraphSimulation resultComparison table VF (V) IF(A) %Error Measurement Simulation 1 0.800 0.799 -0.11 2 0.850 0.852 0.27 5 0.940 0.942 0.22 10 1.040 1.034 -0.54 20 1.170 1.169 -0.06 50 1.485 1.490 0.32 100 1.965 1.963 -0.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  12. 12. Reverse Recovery CharacteristicsCircuit Simulation result TimeEvaluation circuitTest condition: VCC=600 (V), IF=15 (A) –di/dt=20 A/usec Parameter Unit Measurement Simulation %Error trr us 0.700 1.250 78.541 Irr A 9.500 9.442 -0.612 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12

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