Device Modeling ReportCOMPONENTS: Silicon Carbide Schottky DiodePART NUMBER: C4D40120DMANUFACTURER: CREEREMARK: Profession...
DIODE MODEL PARAMETERS Spice model                                      Model description  parameter     IS        Saturat...
Forward Current CharacteristicsCircuit Simulation resultEvaluation circuit                     All Rights Reserved Copyrig...
Comparison GraphCircuit Simulation resultComparison table                                             VF (V)              ...
Reverse Current CharacteristicCircuit Simulation resultEvaluation circuit                     All Rights Reserved Copyrigh...
Comparison GraphCircuit Simulation resultComparison table                                            IR (mA)              ...
Total Capacitance CharacteristicsCircuit Simulation resultEvaluation circuit                     All Rights Reserved Copyr...
Comparison GraphCircuit Simulation resultComparison table                                            CT (pF)              ...
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SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK

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SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of C4D40120D LTspice Model (Professional Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Silicon Carbide Schottky DiodePART NUMBER: C4D40120DMANUFACTURER: CREEREMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  2. 2. DIODE MODEL PARAMETERS Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  3. 3. Forward Current CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  4. 4. Comparison GraphCircuit Simulation resultComparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.750 0.768 2.40 0.2 0.820 0.806 -1.71 0.5 0.860 0.861 0.12 1 0.925 0.910 -1.62 2 0.975 0.974 -0.10 5 1.100 1.106 0.55 10 1.285 1.283 -0.16 20 1.589 1.603 0.88 40 2.215 2.208 -0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  5. 5. Reverse Current CharacteristicCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  6. 6. Comparison GraphCircuit Simulation resultComparison table IR (mA) VR (V) %Error Measurement Simulation 1250 4.00E-03 3.900E-03 -2.50 1350 1.47E-02 1.400E-02 -4.76 1450 5.24E-02 5.000E-02 -4.58 1550 1.71E-01 1.790E-01 4.86 1555 1.00E+00 1.00E+00 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  7. 7. Total Capacitance CharacteristicsCircuit Simulation resultEvaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  8. 8. Comparison GraphCircuit Simulation resultComparison table CT (pF) VR (V) %Error Measurement Simulation 0.2 1445.000 1448.000 0.21 0.5 1310.000 1313.000 0.23 1 1150.000 1154.100 0.36 2 950.000 959.127 0.96 5 700.000 694.823 -0.74 10 530.000 522.351 -1.44 20 385.000 384.447 -0.14 50 255.000 251.905 -1.21 100 180.000 181.873 1.04 200 125.000 131.017 4.81 500 82.000 84.780 3.39 1000 59.000 61.201 3.73 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8

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