This document summarizes the key specifications and characteristics of the BTS5016-1EKB smart high-side power switch from Bee Technologies. It includes a block diagram, descriptions of the input, enable, and output pins, graphs of the switching performance, and tables comparing the simulated and measured values for critical parameters like on-resistance, switching times, and input/output voltage curves.

1. Part number: BTS5016-1EKB
Draft V.1
Smart High-Side Power Switch
Copyright (C) Bee Technologies Inc. 2012 1

2. INDEX
• Block Diagram
• Characteristics
– INput-Pin
– DEN-Pin
– Ron (ON-state resistance)
– Turn ON/OFF
• Application Circuit
Copyright (C) Bee Technologies Inc. 2012 2

3. Block Diagram
• The power transistor is built by an N-channel power MOSFET
Copyright (C) Bee Technologies Inc. 2012 3
N-channel
power MOSFET
INput channel;
Input signal for
channel activation
Voltage Supply;
Battery voltage
Diagnostic Enable;
Digital signal to
enable/disable
OUTput
GrouND;
Ground connection
Sense;
Sense current of the
selected channel

4. Characteristics
• INput-Pin
• DEN-Pin
• Ron (ON-state resistance)
• Turn ON/OFF
Copyright (C) Bee Technologies Inc. 2012 4

5. INput-Pin(1/3)
C 1
1 0 0 n
I C = 0
R I S
1 . 2 k
V 1
T D = 0
T F = 1 s
P W = 1 0 n
P E R = 2 s
V 1 = 0 V
T R = 1 s
V 2 = 5 V
R L
2
O U T
R I N
4 . 7 k
I N
R D E N
4 . 7 k
D E N
G N D
R P D
4 . 7 k
C 2
1 0 0 p
I C = 0
V B A T
V S
1 3 . 5 V
V B A T
0
0
R I S O
1 G
U 1 B T S 5 0 1 6
I N
1
D E N
2
G N D
3
V S
4
O U T
5
I S
6
T A M B
7
R G N D
1 k
D 1
D m o d
O U T
V D E N
0 V
V-
V+
V-
V+
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 5

6. INput-Pin(2/3)
Copyright (C) Bee Technologies Inc. 2012 6

7. INput-Pin(3/3)
Copyright (C) Bee Technologies Inc. 2012 7
Measurement Simulation %Error
VIN(L) (V) 0.800[Max] 1.470 83.76
VIN(H) (V) 2.000[Min] 1.608 -19.60
VIN(HYS) (mV) 250.000 201.017 -19.59
• Comparison Table

8. DEN-Pin(1/3)
C 1
1 0 0 n
I C = 0
R I S
1 . 2 k
R L
2
O U T
I N
R I N
4 . 7 k
R D E N
4 . 7 k
D E N
G N D
R P D
4 . 7 k
C 2
1 0 0 p
I C = 0
V B A T
V S
1 3 . 5 V
V B A T
0
0
R I S O
1 G
U 1 B T S 5 0 1 6
I N
1
D E N
2
G N D
3
V S
4
O U T
5
I S
6
T A M B
7
R G N D
1 k
D 1
D m o d
O U T
V I N
5 V
V D E N
T D = 0
T F = 1 s
P W = 1 0 n
P E R = 2 s
V 1 = 0 V
T R = 1 s
V 2 = 5 V
V-
V+
V-
V+
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 8

9. DEN-Pin(2/3)
Copyright (C) Bee Technologies Inc. 2012 9

10. DEN-Pin(3/3)
Copyright (C) Bee Technologies Inc. 2012 10
Measurement Simulation %Error
VDEN(L) (V) 0.800[Max] 3.392 324.00
VDEN(H) (V) 2.000[Min] 3.593 79.65
VDEN(HYS) (mV) 250.000 200.896 -19.64
• Comparison Table

11. Ron (ON-state resistance)(1/3)
• Test Condition: IL=10A, VIN=4.5V and VS=13.5V
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 11
R G N D
1 k
D 1
D M O D
O U T
U 1 B T S 5 0 1 6
I N
1
D E N
2
G N D
3
V S
4
O U T
5
I S
6
T A M B
7
R 3
1 . 2 k
I N
R I N
4 . 7 k R D E N
4 . 7 k
D E N
0
V B A T
V S
1 3 . 5 V
G N D
V B A T
I L
1 0 A
R I S O
1 G
V I N
4 . 5 V
V D E N
0 V
0
Ron=(VS-
VOUT)/IL
Ron=(VS-
VOUT)/IL

12. Copyright (C) Bee Technologies Inc. 2012 12
Ron (ON-state resistance)(2/3)

13. Ron (ON-state resistance)(3/3)
Copyright (C) Bee Technologies Inc. 2012 13
Measurement Simulation %Error
RDS(on)[mΩ] 16.000 16.003 0.02
• Comparison Table

14. Turn ON/OFF(1/4)
C 1
1 0 0 n
I C = 0
R I S
1 . 2 k
V 1
T D = 0 . 0 5 m
T F = 1 0 u
P W = 0 . 6 m
P E R = 1 m
V 1 = 0 V
T R = 1 0 u
V 2 = 5 V
R L
2
O U T
R I N
4 . 7 k
I N
R D E N
4 . 7 k
D E N
G N D
R P D
4 . 7 k
C 2
1 0 0 p
I C = 0
V B A T
V S
1 3 . 5 V
V B A T
0
0
R I S O
1 G
U 1 B T S 5 0 1 6
I N
1
D E N
2
G N D
3
V S
4
O U T
5
I S
6
T A M B
7
R G N D
1 k
D 1
D m o d
O U T
V D E N
0 V
• Test Condition: VS=13.5V and RL=2Ω
• Analysis Type: Transient
• Simulation result and Comparison table show in next page
Copyright (C) Bee Technologies Inc. 2012 14
VOUTVOUT
VINVIN

15. Copyright (C) Bee Technologies Inc. 2012 15
Turn ON/OFF(2/4)
VINVIN
VOUTVOUT

16. Turn ON/OFF(3/4)
• Figure 9 Switching a Resistive Load Timing (Page 15 from data sheet)
Copyright (C) Bee Technologies Inc. 2012 16
Ti me
1. 0ms 1. 2ms 1. 4ms 1. 6ms 1. 8ms 2. 0ms
V( OUT, GND)
- 5V
0V
5V
10V
15V
20V
V( I N, 0)
- 2. 0V
2. 0V
4. 0V
6. 0V
8. 0V
SEL>>

17. Turn ON/OFF(4/4)
Copyright (C) Bee Technologies Inc. 2012 17
Measurement Simulation %Error
dV/dton(V/us) 0.250 0.255 2.00
dV/dtoff(V/us) 0.250 0.247 -1.20
∆dV/dt(V/us) 0.000 0.008 -
ton (us) 100.000 89.842 -10.16
toFF (us) 100.000 104.194 4.19
∆tsw (us) -10.000 14.352 -
ton_delay (us) 60.000 36.525 -39.13
toff_delay (us) 60.000 53.778 -10.37
• Comparison Table