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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:BT152-400R
MANUFACTURER: PHILIPS SEMICONDUCTOR




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic

Evaluation Circuit


                              RL
                   A

                              114


                        U10
               G        bt152-400r
                                              VD
                                      12Vdc
                   K
        Ig

        0Adc




                    0



Simulation result




                                                              Simulation




Comparison Table
                                     Measurement      Simulation           % Error
        IGT (mA)                          3             2.9923             -0.2567
         VGT (V)                         0.6           0.591460            -1.4233

                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                        Simulation




Comparison Table
        At ITM=40A            Measurement            Simulation          % Error
          VTM(V)                  1.4                  1.4527            3.7643




               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                      Simulation




Comparison Table
           VD=12V               Measurement            Simulation         % Error
           IH(mA)                   15                   15.059           0.3933


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Switching Time Characteristic

Evaluation Circuit




Simulation result




                                            Simulation




Comparison Table
                            Measurement             Simulation            %Error
         Ton(us)                 2                    2.0195               0.9750
         Toff(us)               70                    69.956              -0.0629


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of BT152-400R in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:BT152-400R MANUFACTURER: PHILIPS SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit RL A 114 U10 G bt152-400r VD 12Vdc K Ig 0Adc 0 Simulation result Simulation Comparison Table Measurement Simulation % Error IGT (mA) 3 2.9923 -0.2567 VGT (V) 0.6 0.591460 -1.4233 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=40A Measurement Simulation % Error VTM(V) 1.4 1.4527 3.7643 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VD=12V Measurement Simulation % Error IH(mA) 15 15.059 0.3933 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 6. Switching Time Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation %Error Ton(us) 2 2.0195 0.9750 Toff(us) 70 69.956 -0.0629 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004