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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:USF5G49
MANUFACTURER: TOSHIBA




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
IG-VT Characteristic

Evaluation Circuit




Simulation result




                                                       Simulation




Comparison Table
                         Measurement              Simulation            % Error
         IGT (uA)          70(max)                  67.700              -3.2857
          VGT (V)          0.8(max)                0.765694             -4.2883

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                        Simulation




Comparison Table
        At ITM=12A          Measurement             Simulation           % Error
          VTM(V)              1.6(max)                1.5322             -4.2375

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                             Simulation




Comparison Table
          VD=6V             Measurement            Simulation           % Error
          IH(mA)                2.5                  2.4409             -2.3640


               All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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SPICE MODEL of USF5G49 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:USF5G49 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT (uA) 70(max) 67.700 -3.2857 VGT (V) 0.8(max) 0.765694 -4.2883 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=12A Measurement Simulation % Error VTM(V) 1.6(max) 1.5322 -4.2375 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VD=6V Measurement Simulation % Error IH(mA) 2.5 2.4409 -2.3640 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005