SPICE MODEL of 2S4M in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:THYRISTOR
PART NUMBER:2S4M
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

2. DIODE MODEL
Pspice model
Model description
Parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

3. IG-VT Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation % Error
IGT (uA) 300(max) 296.000 -1.3333
VGT (V) 0.8(max) 0.780101 -2.48738
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

4. ITM-VTM Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
At ITM=4A Measurement Simulation % Error
VTM(V) 2.2(max) 2.1953 -0.21364
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

5. Holding Characteristic (IH)
Evaluation Circuit
Simulation result
Simulation
Comparison Table
VD=6V Measurement Simulation % Error
IH(mA) 10(max) 9.864 -1.3600
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

6. Switching Time Characteristic
Evaluation Circuit
Simulation result
Simulation
Comparison Table
Measurement Simulation %Error
Ton(us) 2(max) 2.0456 2.2800
Toff(us) 15(max) 15.013 0.08667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2004