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B stad_BJT
- 2. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor ConstructionTransistor Construction
There are two types of transistors:
• pnp
• npn
The terminals are labeled:
• E - Emitter
• B - Base
• C - Collector
pnppnp
npnnpn
22
- 3. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor OperationTransistor Operation
With the external sources, VEE and VCC, connected as shown:
• The emitter-base junction is forward biased
• The base-collector junction is reverse biased
33
- 4. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Currents in a TransistorCurrents in a Transistor
The collector current is comprised of two
currents:
BICIEI +=
minority
COI
majority
CICI +=
Emitter current is the sum of the collector and
base currents:
44
- 5. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Base ConfigurationCommon-Base Configuration
The base is common to both input (emitter–base) and
output (collector–base) of the transistor.
55
- 6. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Base AmplifierCommon-Base Amplifier
Input CharacteristicsInput Characteristics
This curve shows the relationship
between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.
66
- 7. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
Common-Base AmplifierCommon-Base Amplifier
Output CharacteristicsOutput Characteristics
77
- 8. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Operating RegionsOperating Regions
• Active – Operating range of the
amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.
88
- 9. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
E
I
C
I ≅
Silicon)(forV0.7BEV =
ApproximationsApproximations
Emitter and collector currents:
Base-emitter voltage:
99
- 10. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Ideally: α = 1
In reality: α is between 0.9 and 0.998
Alpha (Alpha (αα))
Alpha (α) is the ratio of IC to IE :
EI
CI
α =dc
Alpha (α) in the AC modeAC mode:
EI
CI
α
Δ
Δ
ac =
1010
- 11. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor AmplificationTransistor Amplification
Voltage Gain:
V50kΩ5ma10
mA10
10mA
20Ω
200mV
===
=≅
≅
====
))((R
L
I
L
V
i
I
L
I
E
I
C
I
iR
iV
iIEI
Currents and Voltages:
1111
250
200mV
50V
===
iV
LV
vA
- 12. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Emitter ConfigurationCommon–Emitter Configuration
The emitter is common to both input
(base-emitter) and output (collector-
emitter).
The input is on the base and the
output is on the collector.
1212
- 13. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Emitter CharacteristicsCommon-Emitter Characteristics
Collector Characteristics Base Characteristics
1313
- 14. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Emitter Amplifier CurrentsCommon-Emitter Amplifier Currents
Ideal CurrentsIdeal Currents
IE = IC + IB IC = α IE
Actual CurrentsActual Currents
IC = α IE + ICBO
When IB = 0 µA the transistor is in cutoff, but there is some minority
current flowing called ICEO.
μA0=
−
= BI
CBO
CEO
α
I
I
1
where ICBO = minority collector current
1414
ICBO is usually so small that it can be ignored, except in high
power transistors and in high temperature environments.
- 15. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Beta (Beta (ββ))
In DC mode:
In AC mode:
β represents the amplification factor of a transistor. (β is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
B
C
I
I
β =dc
constantac =
∆
∆
= CEV
B
C
I
I
β
1515
- 16. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Determining β from a Graph
Beta (Beta (ββ))
108
A25
mA2.7
β 7.5VDC CE
=
µ
= =
100
μA10
mA1
μA)20μA(30
mA)2.2mA(3.2
β
7.5V
AC
CE
=
=
−
−
=
=
1616
- 17. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Relationship between amplification factors β and α
1β
β
α
+
=
1α
α
β
−
=
Beta (Beta (ββ))
Relationship Between Currents
BC βII = BE 1)I(βI +=
1717
- 18. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Collector ConfigurationCommon–Collector Configuration
The input is on the
base and the output is
on the emitter.
1818
- 19. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Collector ConfigurationCommon–Collector Configuration
The characteristics are
similar to those of the
common-emitter
configuration, except the
vertical axis is IE.
1919
- 20. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
VCE is at maximum and IC is at
minimum (ICmax= ICEO) in the cutoff
region.
IC is at maximum and VCE is at
minimum (VCE max = VCEsat = VCEO) in
the saturation region.
The transistor operates in the active
region between saturation and cutoff.
Operating Limits for Each ConfigurationOperating Limits for Each Configuration
2020
- 21. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Power DissipationPower Dissipation
Common-collector:
CCBCmax IVP =
CCECmax IVP =
ECECmax IVP =
Common-base:
Common-emitter:
2121
- 22. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Specification SheetTransistor Specification Sheet
2222
- 23. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Specification SheetTransistor Specification Sheet
2323
- 24. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor TestingTransistor Testing
• Curve TracerCurve Tracer
Provides a graph of the characteristic curves.
• DMMDMM
Some DMMs measure βDC or hFE.
• OhmmeterOhmmeter
2424
- 25. Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Terminal IdentificationTransistor Terminal Identification
2525