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Chapter 3:
Bipolar Junction Transistors
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor ConstructionTransistor Construction
There are two types of transistors:
• pnp
• npn
The terminals are labeled:
• E - Emitter
• B - Base
• C - Collector
pnppnp
npnnpn
22
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor OperationTransistor Operation
With the external sources, VEE and VCC, connected as shown:
• The emitter-base junction is forward biased
• The base-collector junction is reverse biased
33
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Currents in a TransistorCurrents in a Transistor
The collector current is comprised of two
currents:
BICIEI +=
minority
COI
majority
CICI +=
Emitter current is the sum of the collector and
base currents:
44
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Base ConfigurationCommon-Base Configuration
The base is common to both input (emitter–base) and
output (collector–base) of the transistor.
55
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Base AmplifierCommon-Base Amplifier
Input CharacteristicsInput Characteristics
This curve shows the relationship
between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.
66
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).
Common-Base AmplifierCommon-Base Amplifier
Output CharacteristicsOutput Characteristics
77
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Operating RegionsOperating Regions
• Active – Operating range of the
amplifier.
• Cutoff – The amplifier is basically
off. There is voltage, but little
current.
• Saturation – The amplifier is full on.
There is current, but little voltage.
88
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
E
I
C
I ≅
Silicon)(forV0.7BEV =
ApproximationsApproximations
Emitter and collector currents:
Base-emitter voltage:
99
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Ideally: α = 1
In reality: α is between 0.9 and 0.998
Alpha (Alpha (αα))
Alpha (α) is the ratio of IC to IE :
EI
CI
α =dc
Alpha (α) in the AC modeAC mode:
EI
CI
α
Δ
Δ
ac =
1010
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor AmplificationTransistor Amplification
Voltage Gain:
V50kΩ5ma10
mA10
10mA
20Ω
200mV
===
=≅
≅
====
))((R
L
I
L
V
i
I
L
I
E
I
C
I
iR
iV
iIEI
Currents and Voltages:
1111
250
200mV
50V
===
iV
LV
vA
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Emitter ConfigurationCommon–Emitter Configuration
The emitter is common to both input
(base-emitter) and output (collector-
emitter).
The input is on the base and the
output is on the collector.
1212
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Emitter CharacteristicsCommon-Emitter Characteristics
Collector Characteristics Base Characteristics
1313
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common-Emitter Amplifier CurrentsCommon-Emitter Amplifier Currents
Ideal CurrentsIdeal Currents
IE = IC + IB IC = α IE
Actual CurrentsActual Currents
IC = α IE + ICBO
When IB = 0 µA the transistor is in cutoff, but there is some minority
current flowing called ICEO.
μA0=
−
= BI
CBO
CEO
α
I
I
1
where ICBO = minority collector current
1414
ICBO is usually so small that it can be ignored, except in high
power transistors and in high temperature environments.
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Beta (Beta (ββ))
In DC mode:
In AC mode:
β represents the amplification factor of a transistor. (β is
sometimes referred to as hfe, a term used in transistor modeling
calculations)
B
C
I
I
β =dc
constantac =
∆
∆
= CEV
B
C
I
I
β
1515
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Determining β from a Graph
Beta (Beta (ββ))
108
A25
mA2.7
β 7.5VDC CE
=
µ
= =
100
μA10
mA1
μA)20μA(30
mA)2.2mA(3.2
β
7.5V
AC
CE
=
=
−
−
=
=
1616
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Relationship between amplification factors β and α
1β
β
α
+
=
1α
α
β
−
=
Beta (Beta (ββ))
Relationship Between Currents
BC βII = BE 1)I(βI +=
1717
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Collector ConfigurationCommon–Collector Configuration
The input is on the
base and the output is
on the emitter.
1818
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Common–Collector ConfigurationCommon–Collector Configuration
The characteristics are
similar to those of the
common-emitter
configuration, except the
vertical axis is IE.
1919
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
VCE is at maximum and IC is at
minimum (ICmax= ICEO) in the cutoff
region.
IC is at maximum and VCE is at
minimum (VCE max = VCEsat = VCEO) in
the saturation region.
The transistor operates in the active
region between saturation and cutoff.
Operating Limits for Each ConfigurationOperating Limits for Each Configuration
2020
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Power DissipationPower Dissipation
Common-collector:
CCBCmax IVP =
CCECmax IVP =
ECECmax IVP =
Common-base:
Common-emitter:
2121
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Specification SheetTransistor Specification Sheet
2222
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Specification SheetTransistor Specification Sheet
2323
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor TestingTransistor Testing
• Curve TracerCurve Tracer
Provides a graph of the characteristic curves.
• DMMDMM
Some DMMs measure βDC or hFE.
• OhmmeterOhmmeter
2424
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Transistor Terminal IdentificationTransistor Terminal Identification
2525

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  • 2. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor ConstructionTransistor Construction There are two types of transistors: • pnp • npn The terminals are labeled: • E - Emitter • B - Base • C - Collector pnppnp npnnpn 22
  • 3. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor OperationTransistor Operation With the external sources, VEE and VCC, connected as shown: • The emitter-base junction is forward biased • The base-collector junction is reverse biased 33
  • 4. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Currents in a TransistorCurrents in a Transistor The collector current is comprised of two currents: BICIEI += minority COI majority CICI += Emitter current is the sum of the collector and base currents: 44
  • 5. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common-Base ConfigurationCommon-Base Configuration The base is common to both input (emitter–base) and output (collector–base) of the transistor. 55
  • 6. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common-Base AmplifierCommon-Base Amplifier Input CharacteristicsInput Characteristics This curve shows the relationship between of input current (IE) to input voltage (VBE) for three output voltage (VCB) levels. 66
  • 7. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky This graph demonstrates the output current (IC) to an output voltage (VCB) for various levels of input current (IE). Common-Base AmplifierCommon-Base Amplifier Output CharacteristicsOutput Characteristics 77
  • 8. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Operating RegionsOperating Regions • Active – Operating range of the amplifier. • Cutoff – The amplifier is basically off. There is voltage, but little current. • Saturation – The amplifier is full on. There is current, but little voltage. 88
  • 9. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky E I C I ≅ Silicon)(forV0.7BEV = ApproximationsApproximations Emitter and collector currents: Base-emitter voltage: 99
  • 10. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Ideally: α = 1 In reality: α is between 0.9 and 0.998 Alpha (Alpha (αα)) Alpha (α) is the ratio of IC to IE : EI CI α =dc Alpha (α) in the AC modeAC mode: EI CI α Δ Δ ac = 1010
  • 11. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor AmplificationTransistor Amplification Voltage Gain: V50kΩ5ma10 mA10 10mA 20Ω 200mV === =≅ ≅ ==== ))((R L I L V i I L I E I C I iR iV iIEI Currents and Voltages: 1111 250 200mV 50V === iV LV vA
  • 12. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common–Emitter ConfigurationCommon–Emitter Configuration The emitter is common to both input (base-emitter) and output (collector- emitter). The input is on the base and the output is on the collector. 1212
  • 13. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common-Emitter CharacteristicsCommon-Emitter Characteristics Collector Characteristics Base Characteristics 1313
  • 14. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common-Emitter Amplifier CurrentsCommon-Emitter Amplifier Currents Ideal CurrentsIdeal Currents IE = IC + IB IC = α IE Actual CurrentsActual Currents IC = α IE + ICBO When IB = 0 µA the transistor is in cutoff, but there is some minority current flowing called ICEO. μA0= − = BI CBO CEO α I I 1 where ICBO = minority collector current 1414 ICBO is usually so small that it can be ignored, except in high power transistors and in high temperature environments.
  • 15. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Beta (Beta (ββ)) In DC mode: In AC mode: β represents the amplification factor of a transistor. (β is sometimes referred to as hfe, a term used in transistor modeling calculations) B C I I β =dc constantac = ∆ ∆ = CEV B C I I β 1515
  • 16. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Determining β from a Graph Beta (Beta (ββ)) 108 A25 mA2.7 β 7.5VDC CE = µ = = 100 μA10 mA1 μA)20μA(30 mA)2.2mA(3.2 β 7.5V AC CE = = − − = = 1616
  • 17. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Relationship between amplification factors β and α 1β β α + = 1α α β − = Beta (Beta (ββ)) Relationship Between Currents BC βII = BE 1)I(βI += 1717
  • 18. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common–Collector ConfigurationCommon–Collector Configuration The input is on the base and the output is on the emitter. 1818
  • 19. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Common–Collector ConfigurationCommon–Collector Configuration The characteristics are similar to those of the common-emitter configuration, except the vertical axis is IE. 1919
  • 20. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky VCE is at maximum and IC is at minimum (ICmax= ICEO) in the cutoff region. IC is at maximum and VCE is at minimum (VCE max = VCEsat = VCEO) in the saturation region. The transistor operates in the active region between saturation and cutoff. Operating Limits for Each ConfigurationOperating Limits for Each Configuration 2020
  • 21. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Power DissipationPower Dissipation Common-collector: CCBCmax IVP = CCECmax IVP = ECECmax IVP = Common-base: Common-emitter: 2121
  • 22. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor Specification SheetTransistor Specification Sheet 2222
  • 23. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor Specification SheetTransistor Specification Sheet 2323
  • 24. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor TestingTransistor Testing • Curve TracerCurve Tracer Provides a graph of the characteristic curves. • DMMDMM Some DMMs measure βDC or hFE. • OhmmeterOhmmeter 2424
  • 25. Copyright ©2009 by Pearson Education, Inc. Upper Saddle River, New Jersey 07458 • All rights reserved. Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky Transistor Terminal IdentificationTransistor Terminal Identification 2525