SlideShare a Scribd company logo
1 of 6
Download to read offline
2SK2886
2009-09-291
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2886
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.)
High forward transfer admittance : |Yfs| = 31 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 50 V)
Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain−source voltage VDSS 50 V
Drain−gate voltage (RGS = 20 kΩ) VDGR 50 V
Gate−source voltage VGSS ±20 V
DC (Note 1) ID 45 A
Drain current
Pulse (Note 1) IDP 135 A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2)
EAS 350 mJ
Avalanche current IAR 45 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W
Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 213 μH, RG = 25 Ω, IAR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC —
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
2SK2886
2009-09-292
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA
Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA
Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V
RDS(ON) VGS = 4 V, ID = 25 A — 27 36
Drain−source ON resistance
RDS(ON) VGS = 10 V, ID = 25 A — 14 20
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 18 31 — S
Input capacitance Ciss — 2200 —
Reverse transfer capacitance Crss — 390 —
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
— 1090 —
pF
Rise time tr — 40 —
Turn−on time ton — 70 —
Fall time tf — 130 —
Switching time
Turn−off time toff — 360 —
ns
Total gate charge (gate−source
plus gate−drain)
Qg — 66 —
Gate−source charge Qgs — 43 —
Gate−drain (“miller”) Charge Qgd
VDD ≈ 40 V, VGS = 10 V, ID = 45 A
— 23 —
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR — — — 45 A
Pulse drain reverse current
(Note 1)
IDRP — — — 135 A
Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.7 V
Reverse recovery time trr — 78 — ns
Reverse recovery charge Qrr
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / μs — 90 — μC
Marking
Lot No.
Note 4
K2886 Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK2886
2009-09-293
2SK2886
2009-09-294
2SK2886
2009-09-295
RG = 25 Ω
VDD = 25 V, L = 213 μH
⎟
⎠
⎞
⎜
⎝
⎛
−
⋅⋅⋅=
DDVDSS
VDSS
AS
VB
B
IL
2
1
E 2
2SK2886
2009-09-296
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

More Related Content

What's hot

What's hot (20)

Original Opto TLP360J TLP360 P360J P360 360 DIP-4 New
Original Opto TLP360J TLP360 P360J P360 360 DIP-4 NewOriginal Opto TLP360J TLP360 P360J P360 360 DIP-4 New
Original Opto TLP360J TLP360 P360J P360 360 DIP-4 New
 
Original IGBT TK8A60DA K8A60 600V 7.5A TO-220F New Toshiba
Original IGBT TK8A60DA K8A60 600V 7.5A TO-220F New ToshibaOriginal IGBT TK8A60DA K8A60 600V 7.5A TO-220F New Toshiba
Original IGBT TK8A60DA K8A60 600V 7.5A TO-220F New Toshiba
 
Original MOSFET N-CHANNEL K10A60D K10A60U 10A60D 10A60 TO-220 10A 600V New
Original MOSFET N-CHANNEL K10A60D K10A60U 10A60D 10A60 TO-220 10A 600V NewOriginal MOSFET N-CHANNEL K10A60D K10A60U 10A60D 10A60 TO-220 10A 600V New
Original MOSFET N-CHANNEL K10A60D K10A60U 10A60D 10A60 TO-220 10A 600V New
 
Original N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 New
Original N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 NewOriginal N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 New
Original N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 New
 
Air Circuit Breakers DW Series
Air Circuit Breakers DW SeriesAir Circuit Breakers DW Series
Air Circuit Breakers DW Series
 
Original N-Channel Mosfet 2SK2628 K2628 2628 TO-220 New Rochester Electronics
Original N-Channel Mosfet 2SK2628 K2628 2628 TO-220 New Rochester ElectronicsOriginal N-Channel Mosfet 2SK2628 K2628 2628 TO-220 New Rochester Electronics
Original N-Channel Mosfet 2SK2628 K2628 2628 TO-220 New Rochester Electronics
 
Original P-Channel Mosfet DTU40P06 40P06 TO-252 60V 27A New
Original P-Channel Mosfet DTU40P06 40P06 TO-252 60V 27A NewOriginal P-Channel Mosfet DTU40P06 40P06 TO-252 60V 27A New
Original P-Channel Mosfet DTU40P06 40P06 TO-252 60V 27A New
 
Original Mosfet 2SJ334 J334 334 30A 60V TO-220 New Toshiba Semiconductor
Original Mosfet 2SJ334 J334 334 30A 60V TO-220 New Toshiba SemiconductorOriginal Mosfet 2SJ334 J334 334 30A 60V TO-220 New Toshiba Semiconductor
Original Mosfet 2SJ334 J334 334 30A 60V TO-220 New Toshiba Semiconductor
 
Original N-Channel Mosfet TK9A20DA K9A20DA 9A20D 200V 8.5A TO-220 New Toshiba
Original N-Channel Mosfet TK9A20DA K9A20DA 9A20D 200V 8.5A TO-220 New ToshibaOriginal N-Channel Mosfet TK9A20DA K9A20DA 9A20D 200V 8.5A TO-220 New Toshiba
Original N-Channel Mosfet TK9A20DA K9A20DA 9A20D 200V 8.5A TO-220 New Toshiba
 
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...
 
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 New
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 NewOriginal Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 New
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 New
 
Original NPN Transistor 2SC5200 C5200 TO-3P New Toshiba
Original NPN Transistor 2SC5200 C5200 TO-3P New ToshibaOriginal NPN Transistor 2SC5200 C5200 TO-3P New Toshiba
Original NPN Transistor 2SC5200 C5200 TO-3P New Toshiba
 
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 New
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 NewOriginal P-Channel Mosfet TPC8107 13A 30V SOP-8 New
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 New
 
Original Transistor Output Optocoupler IC TLP627-2 DIP-8 New Toshiba
Original Transistor Output Optocoupler IC TLP627-2 DIP-8 New ToshibaOriginal Transistor Output Optocoupler IC TLP627-2 DIP-8 New Toshiba
Original Transistor Output Optocoupler IC TLP627-2 DIP-8 New Toshiba
 
Hướng dẫn sử dụng máy đo điện áp Testo 750
Hướng dẫn sử dụng máy đo điện áp Testo 750Hướng dẫn sử dụng máy đo điện áp Testo 750
Hướng dẫn sử dụng máy đo điện áp Testo 750
 
Original N Channel Mosfet 2SK2718 K2718 TO-220 New Toshiba
Original N Channel Mosfet 2SK2718 K2718 TO-220 New ToshibaOriginal N Channel Mosfet 2SK2718 K2718 TO-220 New Toshiba
Original N Channel Mosfet 2SK2718 K2718 TO-220 New Toshiba
 
Seaward Catalog High Voltage Test Tools
Seaward Catalog High Voltage Test ToolsSeaward Catalog High Voltage Test Tools
Seaward Catalog High Voltage Test Tools
 
Imegger, mit 4002, cat iv insulation tester 1000 v, op 54
Imegger, mit 4002, cat iv insulation tester 1000 v, op 54Imegger, mit 4002, cat iv insulation tester 1000 v, op 54
Imegger, mit 4002, cat iv insulation tester 1000 v, op 54
 
1 n4148 1n4448
1 n4148 1n44481 n4148 1n4448
1 n4148 1n4448
 
Original N-CHANNEL IGBT GT30J122 30J122A 30J122 600V 30A TO-3P New Toshiba
Original N-CHANNEL IGBT GT30J122 30J122A 30J122 600V 30A TO-3P New ToshibaOriginal N-CHANNEL IGBT GT30J122 30J122A 30J122 600V 30A TO-3P New Toshiba
Original N-CHANNEL IGBT GT30J122 30J122A 30J122 600V 30A TO-3P New Toshiba
 

Similar to 2SK2886 Datasheet

Similar to 2SK2886 Datasheet (17)

Original Opto TLP627 P627 627 DIP-4 New
Original Opto TLP627 P627 627 DIP-4 NewOriginal Opto TLP627 P627 627 DIP-4 New
Original Opto TLP627 P627 627 DIP-4 New
 
Original PNP Transistor 2SA1943 A1943 TO-3P New Toshiba
Original PNP Transistor 2SA1943 A1943 TO-3P New ToshibaOriginal PNP Transistor 2SA1943 A1943 TO-3P New Toshiba
Original PNP Transistor 2SA1943 A1943 TO-3P New Toshiba
 
Original Mosfet N-Channel SSM3K15FV OP SMD Code SOT-723 New
Original Mosfet N-Channel SSM3K15FV OP SMD Code SOT-723 NewOriginal Mosfet N-Channel SSM3K15FV OP SMD Code SOT-723 New
Original Mosfet N-Channel SSM3K15FV OP SMD Code SOT-723 New
 
K3799
K3799K3799
K3799
 
Original N-Channel IGBT RJP63K2 63K2 TO-220F New Renesas
Original N-Channel IGBT RJP63K2 63K2 TO-220F New RenesasOriginal N-Channel IGBT RJP63K2 63K2 TO-220F New Renesas
Original N-Channel IGBT RJP63K2 63K2 TO-220F New Renesas
 
Original IGBT N-CHANNEL RJP30H1 30H1 360V 30A TO-252 New
Original IGBT N-CHANNEL RJP30H1 30H1 360V 30A TO-252 NewOriginal IGBT N-CHANNEL RJP30H1 30H1 360V 30A TO-252 New
Original IGBT N-CHANNEL RJP30H1 30H1 360V 30A TO-252 New
 
Original NPN Transistor 2SD1273 D1273 TO-220F New Panasonic
Original NPN Transistor 2SD1273 D1273 TO-220F New PanasonicOriginal NPN Transistor 2SD1273 D1273 TO-220F New Panasonic
Original NPN Transistor 2SD1273 D1273 TO-220F New Panasonic
 
Original IGBT Transistor GT60N322 60N322 N322 322 57A 1000V TO-3P New Toshiba
Original IGBT Transistor GT60N322 60N322 N322 322 57A 1000V TO-3P New ToshibaOriginal IGBT Transistor GT60N322 60N322 N322 322 57A 1000V TO-3P New Toshiba
Original IGBT Transistor GT60N322 60N322 N322 322 57A 1000V TO-3P New Toshiba
 
Original IGBT IC RJP63F3 63F3 TO-220 New Renesas
Original IGBT IC RJP63F3 63F3 TO-220 New RenesasOriginal IGBT IC RJP63F3 63F3 TO-220 New Renesas
Original IGBT IC RJP63F3 63F3 TO-220 New Renesas
 
Original DUAL N Channel Mosfet SP8K5 SOP-8 New
Original DUAL N Channel Mosfet  SP8K5 SOP-8 NewOriginal DUAL N Channel Mosfet  SP8K5 SOP-8 New
Original DUAL N Channel Mosfet SP8K5 SOP-8 New
 
Original IGBT RJP30E4 360V 35A TO-263 New Renesas Panasonic
Original IGBT RJP30E4 360V 35A TO-263 New Renesas PanasonicOriginal IGBT RJP30E4 360V 35A TO-263 New Renesas Panasonic
Original IGBT RJP30E4 360V 35A TO-263 New Renesas Panasonic
 
Original PNP Transistor A1020-Y A1020 1020 2SA1020 TO-92 New ON semiconductor
Original PNP Transistor A1020-Y A1020 1020 2SA1020 TO-92 New ON semiconductorOriginal PNP Transistor A1020-Y A1020 1020 2SA1020 TO-92 New ON semiconductor
Original PNP Transistor A1020-Y A1020 1020 2SA1020 TO-92 New ON semiconductor
 
Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...
Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...
Original Switching Voltage Regulators Mosfet N TK40E10N1 K40E10 100V 40A TO-9...
 
Original NPN Bipolar Transistor 2SC3423 C3423 3423 TO-126 New Toshiba
Original NPN Bipolar Transistor 2SC3423 C3423 3423 TO-126 New ToshibaOriginal NPN Bipolar Transistor 2SC3423 C3423 3423 TO-126 New Toshiba
Original NPN Bipolar Transistor 2SC3423 C3423 3423 TO-126 New Toshiba
 
Original NPN 2SC5171 C5171 TO-220F New Toshiba
Original NPN 2SC5171 C5171 TO-220F New ToshibaOriginal NPN 2SC5171 C5171 TO-220F New Toshiba
Original NPN 2SC5171 C5171 TO-220F New Toshiba
 
Original IGBT RJP6065DPM 6065 New Renesas
Original IGBT RJP6065DPM 6065 New RenesasOriginal IGBT RJP6065DPM 6065 New Renesas
Original IGBT RJP6065DPM 6065 New Renesas
 
Original NPN Transistor 2SC5353 C5353 5353 TO-220F New Toshiba
Original NPN Transistor 2SC5353 C5353 5353 TO-220F New ToshibaOriginal NPN Transistor 2SC5353 C5353 5353 TO-220F New Toshiba
Original NPN Transistor 2SC5353 C5353 5353 TO-220F New Toshiba
 

More from Tsuyoshi Horigome

More from Tsuyoshi Horigome (20)

FedExで書類を送付する場合の設定について(オンライン受付にて登録する場合について)
FedExで書類を送付する場合の設定について(オンライン受付にて登録する場合について)FedExで書類を送付する場合の設定について(オンライン受付にて登録する場合について)
FedExで書類を送付する場合の設定について(オンライン受付にて登録する場合について)
 
Update 46 models(Solar Cell) in SPICE PARK(MAY2024)
Update 46 models(Solar Cell) in SPICE PARK(MAY2024)Update 46 models(Solar Cell) in SPICE PARK(MAY2024)
Update 46 models(Solar Cell) in SPICE PARK(MAY2024)
 
SPICE PARK APR2024 ( 6,793 SPICE Models )
SPICE PARK APR2024 ( 6,793 SPICE Models )SPICE PARK APR2024 ( 6,793 SPICE Models )
SPICE PARK APR2024 ( 6,793 SPICE Models )
 
Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)
Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)
Update 22 models(Schottky Rectifier ) in SPICE PARK(APR2024)
 
SPICE PARK APR2024 ( 6,747 SPICE Models )
SPICE PARK APR2024 ( 6,747 SPICE Models )SPICE PARK APR2024 ( 6,747 SPICE Models )
SPICE PARK APR2024 ( 6,747 SPICE Models )
 
Update 31 models(Diode/General ) in SPICE PARK(MAR2024)
Update 31 models(Diode/General ) in SPICE PARK(MAR2024)Update 31 models(Diode/General ) in SPICE PARK(MAR2024)
Update 31 models(Diode/General ) in SPICE PARK(MAR2024)
 
SPICE PARK MAR2024 ( 6,725 SPICE Models )
SPICE PARK MAR2024 ( 6,725 SPICE Models )SPICE PARK MAR2024 ( 6,725 SPICE Models )
SPICE PARK MAR2024 ( 6,725 SPICE Models )
 
Update 29 models(Solar cell) in SPICE PARK(FEB2024)
Update 29 models(Solar cell) in SPICE PARK(FEB2024)Update 29 models(Solar cell) in SPICE PARK(FEB2024)
Update 29 models(Solar cell) in SPICE PARK(FEB2024)
 
SPICE PARK FEB2024 ( 6,694 SPICE Models )
SPICE PARK FEB2024 ( 6,694 SPICE Models )SPICE PARK FEB2024 ( 6,694 SPICE Models )
SPICE PARK FEB2024 ( 6,694 SPICE Models )
 
Circuit simulation using LTspice(Case study)
Circuit simulation using LTspice(Case study)Circuit simulation using LTspice(Case study)
Circuit simulation using LTspice(Case study)
 
Mindmap of Semiconductor sales business(15FEB2024)
Mindmap of Semiconductor sales business(15FEB2024)Mindmap of Semiconductor sales business(15FEB2024)
Mindmap of Semiconductor sales business(15FEB2024)
 
2-STAGE COCKCROFT-WALTON [SCHEMATIC] using LTspice
2-STAGE COCKCROFT-WALTON [SCHEMATIC] using LTspice2-STAGE COCKCROFT-WALTON [SCHEMATIC] using LTspice
2-STAGE COCKCROFT-WALTON [SCHEMATIC] using LTspice
 
PSpice simulation of power supply for TI is Error
PSpice simulation of power supply  for TI is ErrorPSpice simulation of power supply  for TI is Error
PSpice simulation of power supply for TI is Error
 
IGBT Simulation of Results from Rgext or Rgint
IGBT Simulation of Results from Rgext or RgintIGBT Simulation of Results from Rgext or Rgint
IGBT Simulation of Results from Rgext or Rgint
 
Electronic component sales method centered on alternative proposals
Electronic component sales method centered on alternative proposalsElectronic component sales method centered on alternative proposals
Electronic component sales method centered on alternative proposals
 
Electronic component sales method focused on new hires
Electronic component sales method focused on new hiresElectronic component sales method focused on new hires
Electronic component sales method focused on new hires
 
Mindmap(electronics parts sales visions)
Mindmap(electronics parts sales visions)Mindmap(electronics parts sales visions)
Mindmap(electronics parts sales visions)
 
Chat GPTによる伝達関数の導出
Chat GPTによる伝達関数の導出Chat GPTによる伝達関数の導出
Chat GPTによる伝達関数の導出
 
伝達関数の理解(Chatgpt)
伝達関数の理解(Chatgpt)伝達関数の理解(Chatgpt)
伝達関数の理解(Chatgpt)
 
DXセミナー(2024年1月17日開催)のメモ
DXセミナー(2024年1月17日開催)のメモDXセミナー(2024年1月17日開催)のメモ
DXセミナー(2024年1月17日開催)のメモ
 

Recently uploaded

Seizure stage detection of epileptic seizure using convolutional neural networks
Seizure stage detection of epileptic seizure using convolutional neural networksSeizure stage detection of epileptic seizure using convolutional neural networks
Seizure stage detection of epileptic seizure using convolutional neural networks
IJECEIAES
 
21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx
rahulmanepalli02
 
Maher Othman Interior Design Portfolio..
Maher Othman Interior Design Portfolio..Maher Othman Interior Design Portfolio..
Maher Othman Interior Design Portfolio..
MaherOthman7
 

Recently uploaded (20)

Intro to Design (for Engineers) at Sydney Uni
Intro to Design (for Engineers) at Sydney UniIntro to Design (for Engineers) at Sydney Uni
Intro to Design (for Engineers) at Sydney Uni
 
Instruct Nirmaana 24-Smart and Lean Construction Through Technology.pdf
Instruct Nirmaana 24-Smart and Lean Construction Through Technology.pdfInstruct Nirmaana 24-Smart and Lean Construction Through Technology.pdf
Instruct Nirmaana 24-Smart and Lean Construction Through Technology.pdf
 
What is Coordinate Measuring Machine? CMM Types, Features, Functions
What is Coordinate Measuring Machine? CMM Types, Features, FunctionsWhat is Coordinate Measuring Machine? CMM Types, Features, Functions
What is Coordinate Measuring Machine? CMM Types, Features, Functions
 
engineering chemistry power point presentation
engineering chemistry  power point presentationengineering chemistry  power point presentation
engineering chemistry power point presentation
 
Independent Solar-Powered Electric Vehicle Charging Station
Independent Solar-Powered Electric Vehicle Charging StationIndependent Solar-Powered Electric Vehicle Charging Station
Independent Solar-Powered Electric Vehicle Charging Station
 
NO1 Best Powerful Vashikaran Specialist Baba Vashikaran Specialist For Love V...
NO1 Best Powerful Vashikaran Specialist Baba Vashikaran Specialist For Love V...NO1 Best Powerful Vashikaran Specialist Baba Vashikaran Specialist For Love V...
NO1 Best Powerful Vashikaran Specialist Baba Vashikaran Specialist For Love V...
 
Seizure stage detection of epileptic seizure using convolutional neural networks
Seizure stage detection of epileptic seizure using convolutional neural networksSeizure stage detection of epileptic seizure using convolutional neural networks
Seizure stage detection of epileptic seizure using convolutional neural networks
 
CLOUD COMPUTING SERVICES - Cloud Reference Modal
CLOUD COMPUTING SERVICES - Cloud Reference ModalCLOUD COMPUTING SERVICES - Cloud Reference Modal
CLOUD COMPUTING SERVICES - Cloud Reference Modal
 
Raashid final report on Embedded Systems
Raashid final report on Embedded SystemsRaashid final report on Embedded Systems
Raashid final report on Embedded Systems
 
SLIDESHARE PPT-DECISION MAKING METHODS.pptx
SLIDESHARE PPT-DECISION MAKING METHODS.pptxSLIDESHARE PPT-DECISION MAKING METHODS.pptx
SLIDESHARE PPT-DECISION MAKING METHODS.pptx
 
Worksharing and 3D Modeling with Revit.pptx
Worksharing and 3D Modeling with Revit.pptxWorksharing and 3D Modeling with Revit.pptx
Worksharing and 3D Modeling with Revit.pptx
 
Circuit Breakers for Engineering Students
Circuit Breakers for Engineering StudentsCircuit Breakers for Engineering Students
Circuit Breakers for Engineering Students
 
Autodesk Construction Cloud (Autodesk Build).pptx
Autodesk Construction Cloud (Autodesk Build).pptxAutodesk Construction Cloud (Autodesk Build).pptx
Autodesk Construction Cloud (Autodesk Build).pptx
 
Developing a smart system for infant incubators using the internet of things ...
Developing a smart system for infant incubators using the internet of things ...Developing a smart system for infant incubators using the internet of things ...
Developing a smart system for infant incubators using the internet of things ...
 
21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx21P35A0312 Internship eccccccReport.docx
21P35A0312 Internship eccccccReport.docx
 
Insurance management system project report.pdf
Insurance management system project report.pdfInsurance management system project report.pdf
Insurance management system project report.pdf
 
Passive Air Cooling System and Solar Water Heater.ppt
Passive Air Cooling System and Solar Water Heater.pptPassive Air Cooling System and Solar Water Heater.ppt
Passive Air Cooling System and Solar Water Heater.ppt
 
Maher Othman Interior Design Portfolio..
Maher Othman Interior Design Portfolio..Maher Othman Interior Design Portfolio..
Maher Othman Interior Design Portfolio..
 
Interfacing Analog to Digital Data Converters ee3404.pdf
Interfacing Analog to Digital Data Converters ee3404.pdfInterfacing Analog to Digital Data Converters ee3404.pdf
Interfacing Analog to Digital Data Converters ee3404.pdf
 
analog-vs-digital-communication (concept of analog and digital).pptx
analog-vs-digital-communication (concept of analog and digital).pptxanalog-vs-digital-communication (concept of analog and digital).pptx
analog-vs-digital-communication (concept of analog and digital).pptx
 

2SK2886 Datasheet

  • 1. 2SK2886 2009-09-291 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2886 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 31 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 50 V Drain−gate voltage (RGS = 20 kΩ) VDGR 50 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 45 A Drain current Pulse (Note 1) IDP 135 A Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 350 mJ Avalanche current IAR 45 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 3.125 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 213 μH, RG = 25 Ω, IAR = 45 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm JEDEC — JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.)
  • 2. 2SK2886 2009-09-292 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cut−off current IDSS VDS = 50 V, VGS = 0 V — — 100 μA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 50 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V RDS(ON) VGS = 4 V, ID = 25 A — 27 36 Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 25 A — 14 20 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 18 31 — S Input capacitance Ciss — 2200 — Reverse transfer capacitance Crss — 390 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 1090 — pF Rise time tr — 40 — Turn−on time ton — 70 — Fall time tf — 130 — Switching time Turn−off time toff — 360 — ns Total gate charge (gate−source plus gate−drain) Qg — 66 — Gate−source charge Qgs — 43 — Gate−drain (“miller”) Charge Qgd VDD ≈ 40 V, VGS = 10 V, ID = 45 A — 23 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 45 A Pulse drain reverse current (Note 1) IDRP — — — 135 A Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 78 — ns Reverse recovery charge Qrr IDR = 45 A, VGS = 0 V dIDR / dt = 50 A / μs — 90 — μC Marking Lot No. Note 4 K2886 Part No. (or abbreviation code) Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
  • 5. 2SK2886 2009-09-295 RG = 25 Ω VDD = 25 V, L = 213 μH ⎟ ⎠ ⎞ ⎜ ⎝ ⎛ − ⋅⋅⋅= DDVDSS VDSS AS VB B IL 2 1 E 2
  • 6. 2SK2886 2009-09-296 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS. • Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.