This document provides preliminary datasheet information for the RJP30H1DPD silicon n-channel IGBT. Key specifications and features include:
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Original N-Channel IGBT RJP63K2 63K2 TO-220F New RenesasAUTHELECTRONIC
This document provides preliminary datasheet information for the RJP63K2DPP-M0 silicon n-channel IGBT. Key specifications of the IGBT include a typical collector-emitter saturation voltage of 1.9V, switching times in the tens to hundreds of nanoseconds range, and isolation in a TO-220FL package. The document includes details on absolute maximum ratings, electrical characteristics, main characteristics graphs, switching waveforms and test circuits, thermal characteristics, and package dimensions.
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Original IGBT RJP30E4 360V 35A TO-263 New Renesas Panasonicauthelectroniccom
This document provides preliminary datasheet information for the RJP30E3DPP-M0 silicon n-channel IGBT (insulated gate bipolar transistor). Key features include trench gate technology, low saturation voltage of 1.6V typical, high speed switching time of 150ns typical, low leak current of 1uA max, and isolation in a TO-220FL package. Absolute maximum ratings and electrical characteristics are provided. Main characteristics include output, transfer, and switching waveforms. Package dimensions and ordering information are also included.
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- Short circuit withstand time of 6 microseconds typical.
- Trench gate and thin wafer technology.
- Maximum ratings, electrical characteristics, switching characteristics and thermal characteristics are provided.
This document summarizes specifications for the Toshiba TLP627, TLP627-2, and TLP627-4 photocouplers. It provides key electrical characteristics such as collector-emitter voltage, current transfer ratio, and switching times. The document also lists absolute maximum ratings, recommended operating conditions, and detailed specifications for the infrared emitting diode and phototransistor components. Pinout diagrams and dimensions are provided for the different package configurations.
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This document provides specifications for the TK10A50D transistor made by Toshiba. Key details include:
- It is an N-channel MOSFET transistor suitable for switching regulator applications.
- Absolute maximum ratings include a drain-source voltage of 500V, drain current of 10A continuous and 40A pulse.
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- Thermal characteristics include a channel to case thermal resistance of 2.78°C/W.
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1. The PC815 Series is a compact photocoupler with high current transfer ratio up to 600% and high isolation voltage between input and output up to 5,000Vrms.
2. It has applications in systems appliances, industrial robots, copiers, and automatic vending machines where signal transmission is needed between circuits of different potentials and impedances.
3. The document provides the device specifications, dimensions, electrical characteristics, and application circuits for the PC815 Series photocouplers.
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This document provides specifications for the TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322. Key details include:
- It is an enhancement mode IGBT with high speed (turn-off time of 0.11 μs) and low saturation voltage (2.4 V typical at 60 A collector current).
- It has a maximum collector-emitter voltage of 1000 V, collector current of 57 A continuous and 120 A pulsed. Junction temperature can reach 150°C.
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- Absolute maximum ratings for voltage, current, power and temperature.
- Electrical characteristics like threshold voltage, on-resistance, capacitance.
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This document provides specifications for the TK15A60D silicon n-channel MOS field effect transistor made by Toshiba. Some key specifications include:
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Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
An improved modulation technique suitable for a three level flying capacitor ...IJECEIAES
This research paper introduces an innovative modulation technique for controlling a 3-level flying capacitor multilevel inverter (FCMLI), aiming to streamline the modulation process in contrast to conventional methods. The proposed
simplified modulation technique paves the way for more straightforward and
efficient control of multilevel inverters, enabling their widespread adoption and
integration into modern power electronic systems. Through the amalgamation of
sinusoidal pulse width modulation (SPWM) with a high-frequency square wave
pulse, this controlling technique attains energy equilibrium across the coupling
capacitor. The modulation scheme incorporates a simplified switching pattern
and a decreased count of voltage references, thereby simplifying the control
algorithm.
An improved modulation technique suitable for a three level flying capacitor ...
Original IGBT N-CHANNEL RJP30H1 30H1 360V 30A TO-252 New
1. R07DS0465EJ0200 Rev.2.00 Page 1 of 6
Jun 15, 2011
Preliminary Datasheet
RJP30H1DPD
Silicon N Channel IGBT
High speed power switching
Features
Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
1
32
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
C
E
Absolute Maximum Ratings
(Tc = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage VCES 360 V
Gate to emitter voltage VGES ±30 V
Collector current IC 30 A
Collector peak current ic(peak)
Note1
200 A
Collector dissipation PC
Note2
40 W
Junction to case thermal impedance j-c 3.13 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
R07DS0465EJ0200
Rev.2.00
Jun 15, 2011
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2. RJP30H1DPD Preliminary
R07DS0465EJ0200 Rev.2.00 Page 2 of 6
Jun 15, 2011
Electrical Characteristics
(Tj = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Zero gate voltage collector current ICES — — 1 A VCE = 360 V, VGE = 0
Gate to emitter leak current IGES — — ±100 nA VGE = ± 30 V, VCE = 0
Gate to emitter cutoff voltage VGE(off) 2.5 — 5 V VCE = 10 V, IC = 1 mA
Collector to emitter saturation
voltage
VCE(sat) — 1.5 2 V IC = 30A, VGE = 15 V
Note3
Input capacitance Cies — 740 — pF
Output capacitance Coes — 40 — pF
Reveres transfer capacitance Cres — 17 — pF
VCE = 25 V
VGE = 0
f = 1 MHz
Total gate charge Qg — 23 — nC
Gate to emitter charge Qge — 4 — nC
Gate to collector charge Qgc — 8 — nC
VGE = 15 V
VCE = 150 V
IC = 30 A
td(on) — 0.02 — s
tr — 0.08 — s
td(off) — 0.04 — s
Switching time
tf — 0.15 — s
IC = 30 A
RL = 5
VGE = 15 V
RG = 5
Notes: 3. Pulse test
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3. RJP30H1DPD Preliminary
R07DS0465EJ0200 Rev.2.00 Page 3 of 6
Jun 15, 2011
Main Characteristics
Typical Output Characteristics (2) Typical Transfer Characteristics
200
160
120
80
40
2 4 6 8 10
Typical Output Characteristics (1)
100
80
60
40
20
1 2 3 4 5
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
5.5 V
6.5 V
7.5 V
7 V
6 V
6 V
7 V
8 V
9 V
CollectorCurrentIC(A)CollectorCurrentIC(A)
CollectorCurrentIC(A)
Collector Current IC (A)
CollectorCurrentIC(A)
Maximum Safe Operation Area
0
0
50
40
30
20
10
0
0
0
0
2 4 6 8 10
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
CollectortoEmitterSaturationVoltage
VCE(sat)(V)
CollectortoEmitterSaturationVoltage
VCE(sat)(V)
0.1
1
10
1 10 100
VGE = 5 V
VGE = 5 V
VCE = 10 V
Pulse Test
Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Tc = 75°C
25°C
–25°C
10 V
8 V
9 V
12 V
10 V
11 V
15 V
15 V
0
0 4 8 12 2016
IC = 30 A
60 A
90 A
Pulse Test
Ta = 25°C
1
2
4
3
5
VGE = 15 V
Pulse Test
25°C 75°C
Tc = –25°C
1000
100
10
0.1 1 10 100
1
0.01
0.1
1000
10
μs
Ta = 25°C
1 shot pulse
14 V
PW
=
100
μs
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4. RJP30H1DPD Preliminary
R07DS0465EJ0200 Rev.2.00 Page 4 of 6
Jun 15, 2011
CapacitanceC(pF)
1
100
1000
10000
0 20 40 60 80 100
Typical Capacitance vs.
Colloctor to Emitter Voltage
Colloctor to Emitter Voltage VCE (V)
Gate Resistance Rg (Ω)
tf
td(off)
tr
td(on)
10
100
1000
Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
SwitchingTimet(ns)
SwitchingTimet(ns)
Colloctor Current IC (A)
1 10 100 1 10 100
tr
10
100
1000
IC = 30 A, VGE = 15 V
RL = 5 Ω, Ta = 25°C
td(off)
tf
td(on)
VCC = 150 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
Switching Characteristics (Typical) (3)
SwitchingTimet(ns)
Case Temperature Tc (°C)
10
100
1000
0 5025 10075 125 150
IC = 30 A, VGE = 15 V
RL = 5 Ω, Rg = 5 Ω
tf
td(off)
td(on)
tr
Cies
Coes
Cres
VGE = 0 V, f = 1 MHz
Ta = 25°C
10
Gate Charge Qg (nC)
Dynamic Input Characteristics (Typical)
ColloctortoEmitterVoltageVCE(V)
GatetoEmitterVoltageVGE(V)
800
600
400
200
0
0
16
12
8
4
0
8 16 24 32 40
VGEVCC = 150 V
IC = 30 A
Ta = 25°C
VCE
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5. RJP30H1DPD Preliminary
R07DS0465EJ0200 Rev.2.00 Page 5 of 6
Jun 15, 2011
Waveform
Ic Monitor
Vin Monitor
D.U.T..
Rg
Vin = 15 V
VCC
10%
tr
Ic
Vin
90%
90%90%
10%
10%
RL
1 m 10 m 100 m 1 10
Pulse Width PW (s)
1
0.3
3
0.1
0.03
0.01
10
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit
td(on) td(off) tf
ton toff
PDM
PW
T
D =
PW
T
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Tc = 25°C
1shot pulse
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6. RJP30H1DPD Preliminary
R07DS0465EJ0200 Rev.2.00 Page 6 of 6
Jun 15, 2011
Package Dimensions
6.5 ± 0.3
(5.6 ± 0.5)
2.3 ± 0.2
0.55 ± 0.1
0.25 Max
0.55 ± 0.1
1.5±0.55.5±0.52.5±0.5
0.8 ± 0.1(1.2)
2.29 ± 0.5 2.29 ± 0.5
1.2Max
(5.1)
(5.1)
Unit: mm⎯ 0.319g
MASS[Typ.]
⎯PRSS0004ZJ-A
RENESAS CodeJEITA Package Code Previous CodePackage Name
TO-252
Ordering Information
Orderable Part Number Quantity Shipping Container
RJP30H1DPD-00-J2 3000 pcs Taping
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