O documento discute conversores digitais-analógicos (DACs), explicando como eles convertem sinais digitais em saídas analógicas de acordo com valores binários de entrada. Detalha os principais tipos de circuitos DAC, como aqueles baseados em amplificadores operacionais e redes R/2R, além de especificações importantes como resolução, precisão e aplicações típicas de DACs.
Este documento establece los símbolos gráficos básicos que se utilizan en ingeniería eléctrica para esquemas eléctricos. Presenta símbolos para la naturaleza de la corriente eléctrica, modos de conexión de devanados, sistemas de distribución y transformadores. El documento contiene 27 símbolos básicos y fue aprobado por el Instituto Ecuatoriano de Normalización como una norma técnica voluntaria ecuatoriana.
The document discusses various Design Rule Check (DRC) rules related to scan testing, including C1, C2, C7, C9, C23, T12, W17, A6, A10, and A11. It provides the category, default handling, description, and examples for violations of each rule. Failure to satisfy these rules can result in reduced testability and lower fault coverage during scan-based testing.
Ludwig: A code-free deep learning toolbox | Piero Molino, Uber AIData Science Milan
The talk will introduce Ludwig, a deep learning toolbox that allows to train models and to use them for prediction without the need to write code. It is unique in its ability to help make deep learning easier to understand for non-experts and enable faster model improvement iteration cycles for experienced machine learning developers and researchers alike. By using Ludwig, experts and researchers can simplify the prototyping process and streamline data processing so that they can focus on developing deep learning architectures.
Bio:
Piero Molino is a Senior Research Scientist at Uber AI with focus on machine learning for language and dialogue. Piero completed a PhD on Question Answering at the University of Bari, Italy. Founded QuestionCube, a startup that built a framework for semantic search and QA. Worked for Yahoo Labs in Barcelona on learning to rank, IBM Watson in New York on natural language processing with deep learning and then joined Geometric Intelligence, where he worked on grounded language understanding. After Uber acquired Geometric Intelligence, he became one of the founding members of Uber AI Labs.
El documento describe lo que es un microcontrolador, explicando que es un circuito integrado programable que contiene los componentes básicos de un computador en un solo chip, como procesador, memoria y puertos de entrada y salida. Se utilizan para controlar dispositivos debido a su pequeño tamaño. Un microcontrolador normalmente contiene un procesador, memoria RAM y ROM, líneas de entrada y salida, y módulos para controlar periféricos. El documento luego procede a describir en detalle las características y espec
Este documento presenta un manual para el diseño de canalizaciones eléctricas de instrumentación. Describe los diferentes tipos de sistemas de canalizaciones incluyendo conduits rígidos y flexibles, canales portacables, y canalizaciones subterráneas. Explica los componentes y accesorios utilizados en cada sistema, y proporciona guías y recomendaciones para el diseño de canalizaciones eléctricas de instrumentación.
The journey of designing an ASIC (application specific integrated circuit) is long and involves a number of major steps – moving from a concept to specification to tape-outs. Although the end product is typically quite small (measured in nanometers), this long journey is interesting and filled with many engineering challenges.
Today, ASIC design flow is a very mature process in silicon turnkey design. The ASIC design flow and its various steps in VLSI engineering that we describe below are based on best practices and proven methodologies in ASIC chip designs. This blog attempts to explain different steps in the ASIC design flow, starting from ASIC design concept and moving from specifications to benefits.
To ensure successful ASIC design, engineers must follow a proven ASIC design flow which is based on a good understanding of ASIC specifications, requirements, low power design and performance, with a focus on meeting the goal of right time to market. Every stage of ASIC design cycle has EDA tools that can help to implement ASIC design with ease.
O documento discute conversores digitais-analógicos (DACs), explicando como eles convertem sinais digitais em saídas analógicas de acordo com valores binários de entrada. Detalha os principais tipos de circuitos DAC, como aqueles baseados em amplificadores operacionais e redes R/2R, além de especificações importantes como resolução, precisão e aplicações típicas de DACs.
Este documento establece los símbolos gráficos básicos que se utilizan en ingeniería eléctrica para esquemas eléctricos. Presenta símbolos para la naturaleza de la corriente eléctrica, modos de conexión de devanados, sistemas de distribución y transformadores. El documento contiene 27 símbolos básicos y fue aprobado por el Instituto Ecuatoriano de Normalización como una norma técnica voluntaria ecuatoriana.
The document discusses various Design Rule Check (DRC) rules related to scan testing, including C1, C2, C7, C9, C23, T12, W17, A6, A10, and A11. It provides the category, default handling, description, and examples for violations of each rule. Failure to satisfy these rules can result in reduced testability and lower fault coverage during scan-based testing.
Ludwig: A code-free deep learning toolbox | Piero Molino, Uber AIData Science Milan
The talk will introduce Ludwig, a deep learning toolbox that allows to train models and to use them for prediction without the need to write code. It is unique in its ability to help make deep learning easier to understand for non-experts and enable faster model improvement iteration cycles for experienced machine learning developers and researchers alike. By using Ludwig, experts and researchers can simplify the prototyping process and streamline data processing so that they can focus on developing deep learning architectures.
Bio:
Piero Molino is a Senior Research Scientist at Uber AI with focus on machine learning for language and dialogue. Piero completed a PhD on Question Answering at the University of Bari, Italy. Founded QuestionCube, a startup that built a framework for semantic search and QA. Worked for Yahoo Labs in Barcelona on learning to rank, IBM Watson in New York on natural language processing with deep learning and then joined Geometric Intelligence, where he worked on grounded language understanding. After Uber acquired Geometric Intelligence, he became one of the founding members of Uber AI Labs.
El documento describe lo que es un microcontrolador, explicando que es un circuito integrado programable que contiene los componentes básicos de un computador en un solo chip, como procesador, memoria y puertos de entrada y salida. Se utilizan para controlar dispositivos debido a su pequeño tamaño. Un microcontrolador normalmente contiene un procesador, memoria RAM y ROM, líneas de entrada y salida, y módulos para controlar periféricos. El documento luego procede a describir en detalle las características y espec
Este documento presenta un manual para el diseño de canalizaciones eléctricas de instrumentación. Describe los diferentes tipos de sistemas de canalizaciones incluyendo conduits rígidos y flexibles, canales portacables, y canalizaciones subterráneas. Explica los componentes y accesorios utilizados en cada sistema, y proporciona guías y recomendaciones para el diseño de canalizaciones eléctricas de instrumentación.
The journey of designing an ASIC (application specific integrated circuit) is long and involves a number of major steps – moving from a concept to specification to tape-outs. Although the end product is typically quite small (measured in nanometers), this long journey is interesting and filled with many engineering challenges.
Today, ASIC design flow is a very mature process in silicon turnkey design. The ASIC design flow and its various steps in VLSI engineering that we describe below are based on best practices and proven methodologies in ASIC chip designs. This blog attempts to explain different steps in the ASIC design flow, starting from ASIC design concept and moving from specifications to benefits.
To ensure successful ASIC design, engineers must follow a proven ASIC design flow which is based on a good understanding of ASIC specifications, requirements, low power design and performance, with a focus on meeting the goal of right time to market. Every stage of ASIC design cycle has EDA tools that can help to implement ASIC design with ease.
This document provides specifications for the TK10A50D transistor made by Toshiba. Key details include:
- It is an N-channel MOSFET transistor suitable for switching regulator applications.
- Absolute maximum ratings include a drain-source voltage of 500V, drain current of 10A continuous and 40A pulse.
- Electrical characteristics include a typical drain-source on-resistance of 0.62Ω and forward transfer admittance of 5S.
- Thermal characteristics include a channel to case thermal resistance of 2.78°C/W.
Original IGBT TK8A60DA K8A60 600V 7.5A TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TK8A60DA MOSFET transistor. It includes:
- Absolute maximum ratings for voltage, current, power and temperature.
- Electrical characteristics like threshold voltage, on resistance and capacitance.
- Thermal characteristics like thermal resistance.
- Safe operating area curves and avalanche energy ratings.
- Testing conditions and notes on using the transistor within specified limits to ensure reliability.
Original N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 Newauthelectroniccom
This document provides specifications for the TK20A60U field effect transistor made by Toshiba. Some key specifications include:
- Maximum drain-source voltage of 600V
- On-resistance as low as 0.165 ohms
- Forward transfer admittance as high as 12S
- Maximum drain cut-off current of 100uA
It also provides timing characteristics, thermal characteristics, and maximum ratings for the transistor. Notes provide important information on ensuring safe operation and derating for long term reliability.
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...AUTHELECTRONIC
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Replacement K10A60D)
https://authelectronic.com/original-n-channel-mosfet-t5a50d-k5a50d-5a50d-to-220-5a-500v-new-toshiba-replacement-k10a60d
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the TJ20A10M3 P-channel MOSFET transistor made by Toshiba. Some key specifications include a maximum drain-source voltage of -100V, typical drain-source on resistance of 63mΩ, and maximum drain cut-off current of -10μA. The document also provides charts showing electrical characteristics like drain current vs drain-source voltage under different conditions and maximum ratings for pulsed operations. Safety guidelines are provided to prevent unintended or unsafe uses of the transistor.
This document provides specifications for the TK15A60D silicon n-channel MOS field effect transistor made by Toshiba. Some key specifications include:
- Maximum drain-source voltage of 600V
- Typical on-resistance of 0.31 ohms
- Maximum drain current of 15A continuous, 60A pulse
- Enhancement mode with threshold voltage of 2.0-4.0V
It also provides detailed electrical characteristics, thermal characteristics, and safety considerations for using the transistor.
This document provides product specifications for the IRFZ44N N-channel enhancement mode trench transistor from Philips Semiconductors. The transistor features very low on-state resistance of 22 mOhms and is intended for use in switched mode power supplies and general purpose switching applications. Key specifications include a maximum drain-source voltage of 55V, drain current of 49A, and junction temperature range of -55°C to 175°C. The document provides detailed electrical characteristics, thermal properties, and mechanical dimensions of the device.
Original Transistor TK6A60D K6A60D 6A60D 6A 600V TO-220F New Toshiba Semicond...AUTHELECTRONIC
This document provides specifications for the TK6A60D MOSFET transistor made by Toshiba. It includes:
- Absolute maximum ratings for voltage, current, power and temperature.
- Electrical characteristics like threshold voltage, on-resistance, capacitance.
- Thermal characteristics such as thermal resistance.
- Graphs of characteristics like on-resistance over temperature and avalanche energy over initial channel temperature.
- Notes on single pulse and repetitive avalanche energy ratings, and restrictions on product use.
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original Mosfet 047N08 FDP047N08 47N08 75V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet 047N08 FDP047N08 47N08 75V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-047n08-fdp047n08-47n08-75v-to-220-new-fairchild
Original P-Channel Mosfet 2SJ598 598 12V 60A TO-252 New NECAUTHELECTRONIC
This document provides information on the 2SJ598 P-channel MOSFET, including its features, specifications, performance characteristics, and packaging. Key details include:
- It is designed for solenoid, motor, and lamp driver applications.
- Features include low on-resistance of 130mΩ maximum and built-in gate protection diode.
- Specifications include maximum ratings for drain-source voltage, drain current, power dissipation, and operating temperature range.
- Graphs illustrate characteristics such as on-resistance variation with temperature, gate voltage, and drain current.
Original N-Channel Mosfet 2SK3667 K3667 3667 600V 30A TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3667 N-channel MOSFET transistor. It includes maximum ratings, electrical characteristics, switching performance metrics and safe operating area curves. The transistor is suitable for switching regulator applications and has low on-resistance, high forward transfer admittance, and low leakage current. Warnings are provided regarding unintended usage of the device.
Orriginal N-Channel Mosfet K3564 3564 2SK3564 TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3564 field effect transistor. It is a silicon n-channel MOS transistor intended for switching regulator applications. Key specifications include a low drain-source ON resistance of 3.7 ohms typical, a high forward transfer admittance of 2.6 Siemens typical, and a low leakage current of 100 microamps maximum. Absolute maximum ratings and electrical characteristics are provided along with typical performance curves.
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 NewAUTHELECTRONIC
This document provides specifications for the TPC8107 P-channel MOSFET transistor made by Toshiba. Key details include:
- It is suitable for applications such as notebook PCs, portable equipment, and lithium ion battery applications.
- It has a small footprint due to a small, thin package and low drain-source on resistance of 5.5 mOhms typical.
- Maximum ratings include a drain-source voltage of -30V, drain current of -13A DC and -52A pulse, and channel temperature of 150°C.
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
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This document provides specifications for the TK10A50D transistor made by Toshiba. Key details include:
- It is an N-channel MOSFET transistor suitable for switching regulator applications.
- Absolute maximum ratings include a drain-source voltage of 500V, drain current of 10A continuous and 40A pulse.
- Electrical characteristics include a typical drain-source on-resistance of 0.62Ω and forward transfer admittance of 5S.
- Thermal characteristics include a channel to case thermal resistance of 2.78°C/W.
Original IGBT TK8A60DA K8A60 600V 7.5A TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TK8A60DA MOSFET transistor. It includes:
- Absolute maximum ratings for voltage, current, power and temperature.
- Electrical characteristics like threshold voltage, on resistance and capacitance.
- Thermal characteristics like thermal resistance.
- Safe operating area curves and avalanche energy ratings.
- Testing conditions and notes on using the transistor within specified limits to ensure reliability.
Original N Channel Transistor TK20A60U K20A60U K20A60 20A 600V TO220 Newauthelectroniccom
This document provides specifications for the TK20A60U field effect transistor made by Toshiba. Some key specifications include:
- Maximum drain-source voltage of 600V
- On-resistance as low as 0.165 ohms
- Forward transfer admittance as high as 12S
- Maximum drain cut-off current of 100uA
It also provides timing characteristics, thermal characteristics, and maximum ratings for the transistor. Notes provide important information on ensuring safe operation and derating for long term reliability.
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Repl...AUTHELECTRONIC
Original N Channel Mosfet T5A50D K5A50D 5A50D TO-220 5A 500V New Toshiba(Replacement K10A60D)
https://authelectronic.com/original-n-channel-mosfet-t5a50d-k5a50d-5a50d-to-220-5a-500v-new-toshiba-replacement-k10a60d
Original Mosfet P-Channel TJ20A10M3 J20A10M3 J20A10M 100V 10A TO-220 NewAUTHELECTRONIC
This document provides specifications for the TJ20A10M3 P-channel MOSFET transistor made by Toshiba. Some key specifications include a maximum drain-source voltage of -100V, typical drain-source on resistance of 63mΩ, and maximum drain cut-off current of -10μA. The document also provides charts showing electrical characteristics like drain current vs drain-source voltage under different conditions and maximum ratings for pulsed operations. Safety guidelines are provided to prevent unintended or unsafe uses of the transistor.
This document provides specifications for the TK15A60D silicon n-channel MOS field effect transistor made by Toshiba. Some key specifications include:
- Maximum drain-source voltage of 600V
- Typical on-resistance of 0.31 ohms
- Maximum drain current of 15A continuous, 60A pulse
- Enhancement mode with threshold voltage of 2.0-4.0V
It also provides detailed electrical characteristics, thermal characteristics, and safety considerations for using the transistor.
This document provides product specifications for the IRFZ44N N-channel enhancement mode trench transistor from Philips Semiconductors. The transistor features very low on-state resistance of 22 mOhms and is intended for use in switched mode power supplies and general purpose switching applications. Key specifications include a maximum drain-source voltage of 55V, drain current of 49A, and junction temperature range of -55°C to 175°C. The document provides detailed electrical characteristics, thermal properties, and mechanical dimensions of the device.
Original Transistor TK6A60D K6A60D 6A60D 6A 600V TO-220F New Toshiba Semicond...AUTHELECTRONIC
This document provides specifications for the TK6A60D MOSFET transistor made by Toshiba. It includes:
- Absolute maximum ratings for voltage, current, power and temperature.
- Electrical characteristics like threshold voltage, on-resistance, capacitance.
- Thermal characteristics such as thermal resistance.
- Graphs of characteristics like on-resistance over temperature and avalanche energy over initial channel temperature.
- Notes on single pulse and repetitive avalanche energy ratings, and restrictions on product use.
Original N-Channel Mosfet 2SK3484 3484 16A 100V TO-252 New Renesas ElectronicsAUTHELECTRONIC
This document provides specifications for the 2SK3484 N-channel MOS field effect transistor (MOSFET) including:
- Electrical characteristics such as on-state resistance, gate cut-off voltage, and input/output capacitances.
- Thermal characteristics such as thermal resistance and power dissipation derating curves.
- Switching characteristics such as turn-on/off delay times and rise/fall times.
- Package drawings and equivalent circuit diagram for the TO-251 and TO-252 packages.
Original Mosfet 047N08 FDP047N08 47N08 75V TO-220 New FairchildAUTHELECTRONIC
Original Mosfet 047N08 FDP047N08 47N08 75V TO-220 New Fairchild
https://authelectronic.com/original-mosfet-047n08-fdp047n08-47n08-75v-to-220-new-fairchild
Original P-Channel Mosfet 2SJ598 598 12V 60A TO-252 New NECAUTHELECTRONIC
This document provides information on the 2SJ598 P-channel MOSFET, including its features, specifications, performance characteristics, and packaging. Key details include:
- It is designed for solenoid, motor, and lamp driver applications.
- Features include low on-resistance of 130mΩ maximum and built-in gate protection diode.
- Specifications include maximum ratings for drain-source voltage, drain current, power dissipation, and operating temperature range.
- Graphs illustrate characteristics such as on-resistance variation with temperature, gate voltage, and drain current.
Original N-Channel Mosfet 2SK3667 K3667 3667 600V 30A TO-220 New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3667 N-channel MOSFET transistor. It includes maximum ratings, electrical characteristics, switching performance metrics and safe operating area curves. The transistor is suitable for switching regulator applications and has low on-resistance, high forward transfer admittance, and low leakage current. Warnings are provided regarding unintended usage of the device.
Orriginal N-Channel Mosfet K3564 3564 2SK3564 TO-220F New ToshibaAUTHELECTRONIC
This document provides specifications for the TOSHIBA 2SK3564 field effect transistor. It is a silicon n-channel MOS transistor intended for switching regulator applications. Key specifications include a low drain-source ON resistance of 3.7 ohms typical, a high forward transfer admittance of 2.6 Siemens typical, and a low leakage current of 100 microamps maximum. Absolute maximum ratings and electrical characteristics are provided along with typical performance curves.
Original P-Channel Mosfet TPC8107 13A 30V SOP-8 NewAUTHELECTRONIC
This document provides specifications for the TPC8107 P-channel MOSFET transistor made by Toshiba. Key details include:
- It is suitable for applications such as notebook PCs, portable equipment, and lithium ion battery applications.
- It has a small footprint due to a small, thin package and low drain-source on resistance of 5.5 mOhms typical.
- Maximum ratings include a drain-source voltage of -30V, drain current of -13A DC and -52A pulse, and channel temperature of 150°C.
Original Power Supply IC LNK632DG LNK632 632 SOP-7 NewAUTHELECTRONIC
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New LeadtrendAUTHELECTRONIC
This document provides information about the LD7591 transition-mode PFC controller, including:
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- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...AUTHELECTRONIC
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New RohmAUTHELECTRONIC
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST MicroelectronicsAUTHELECTRONIC
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Original N-Channel Mosfet 2SK3562 3562 TO-220 New ToshibaAUTHELECTRONIC
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- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
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Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChildAUTHELECTRONIC
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International RectifierAUTHELECTRONIC
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...AUTHELECTRONIC
The document provides information on the SN54LVC14A and SN74LVC14A hex Schmitt-trigger inverter integrated circuits. It describes their operating voltage ranges from 1.65V to 3.6V, maximum propagation delay of 6.4ns at 3.3V, ESD protection exceeding 2000V human-body and 200V machine models, and thermal characteristics with package impedance ranging from 47°C/W to 127°C/W. Ordering information and packaging details are provided for various operating temperature ranges from -55°C to 125°C. Electrical characteristics like input thresholds, output voltages, input and output currents, and input capacitance are specified over operating conditions.
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 NewAUTHELECTRONIC
The Allegro ACS710 current sensor provides economical and precise current sensing for industrial, commercial, and communications systems. It uses a precision linear Hall sensor integrated circuit with a copper conduction path near the surface to linearly track the magnetic field generated by the applied current. The sensor offers high immunity to electrical noise and low offset drift, and provides an analog output voltage and integrated overcurrent detection. It is available in a small surface-mount package.
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...AUTHELECTRONIC
The document provides specifications and design information for the TPS54231 step-down DC-DC converter from Texas Instruments. The TPS54231 is a 2-A, 28-V input converter with an integrated high-side MOSFET. It features adjustable output voltage down to 0.8V, pulse skipping for high efficiency at light loads, fixed 570kHz switching frequency, and various protection mechanisms. Application areas include consumer, industrial, and automotive equipment requiring distributed power supplies. The device is available in an 8-pin SOIC package.
Original Microcontroller IC R5F104BDA R5F 104BDA 104 NewAUTHELECTRONIC
This document provides an overview and specifications for the Renesas RL78/G14 microcontroller, including:
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- 16 to 512 KB flash memory, 44 DMIPS performance at 32MHz.
- Various low power modes like HALT, STOP, and SNOOZE.
- On-chip peripherals include timers, ADC, DAC, comparators, serial interfaces, and I/O ports.
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Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...AUTHELECTRONIC
The UCC28061 is a transition-mode PFC controller that features natural interleaving to improve efficiency and reduce component size. It provides complete system-level protections including input brownout, output overvoltage, and thermal shutdown. The device utilizes a natural interleaving technique where both channels operate as masters synchronized to the same frequency, delivering strong matching and fast response.
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New ToshibaAUTHELECTRONIC
This document provides specifications for the TD62083APG/AFG and TD62084APG/AFG integrated circuits from Toshiba. They are 8-channel Darlington sink drivers comprised of NPN Darlington pairs, with each channel capable of 500mA of output current. Key features include integral clamp diodes, compatible inputs for various logic types, DIP-18 and SOP-18 packaging options. Electrical characteristics, test circuits, precautions and package dimensions are provided.
Original Zener Diode 1N5366B 5366B 5366 5W 39V NewAUTHELECTRONIC
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Original P-Channel Mosfet DTU40P06 40P06 TO-252 60V 27A New
1. 1
P-Channel 60 V (D-S) MOSFET
FEATURES
• TrenchFET®
Power MOSFET
• Material categorization:
APPLICATIONS
• Load Switch
Notes:
a. Duty cycle 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
d. Package limited.
PRODUCT SUMMARY
VDS (V) RDS(on) () ID (A)
- 60
0.045 at VGS = - 10 V - 40d
0.054 at VGS = - 4.5 V - 40d
TO-252
SG D
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60
V
Gate-Source Voltage VGS ± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
ID
- 40d
A
TC = 125 °C - 27.5
Pulsed Drain Current IDM - 110
Avalanche Current IAS - 30
Single Pulse Avalanche Energya L = 0.1 mH EAS 125 mJ
Power Dissipation
TC = 25 °C
PD
113c
W
TA = 25 °C 2.5b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Junction-to-Ambientb
t 10 s
RthJA
15 18
°C/WSteady State 40 50
Junction-to-Case RthJC 0.82 1.1
DTU40P06
www.din-tek.jp
2. 2
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = - 60 V, VGS = 0 V - 1
µAVDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50
VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100
On-State Drain Currenta ID(on) VDS = -5 V, VGS = - 10 V - 50 A
Drain-Source On-State Resistancea RDS(on)
VGS = - 10 V, ID = - 5 A 0.045 0.050
VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.060
VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.073
VGS = - 4.5 V, ID = - 5 A 0.060
Forward Transconductancea gfs VDS = - 15 V, ID = - 17 A 61 S
Dynamicb
Input Capacitance Ciss
VGS = 0 V, VDS = - 25 V, f = 1 MHz
4950
pFOutput Capacitance Coss 480
Reverse Transfer Capacitance Crss 405
Total Gate Chargec Qg
VDS = - 30 V, VGS = - 10 V, ID = - 40 A
110 165
nCGate-Source Chargec Qgs 19
Gate-Drain Chargec Qgd 28
Turn-On Delay Timec td(on)
VDD = - 30 V, RL = 0.6 Ω
ID ≅ - 40 A, VGEN = - 10 V, RG = 6
Ω
15 23
ns
Rise Timec tr 70 105
Turn-Off Delay Timec td(off) 175 260
Fall Timec tf 175 260
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current IS - 40
A
Pulsed Current ISM - 80
Forward Voltagea VSD IF = - 40 A, VGS = 0 V - 1 - 1.6 V
Reverse Recovery Time trr IF = - 40 A, dI/dt = 100 A/µs 45 70 ns
DTU40P06
www.din-tek.jp
0.054
3. 3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
VDS - Drain-to-Source Voltage (V)
-DrainCurrent(A)ID
-3 V
0
10
20
30
40
50
60
70
80
0 1 2 3 4 5
VGS = -10 thru -4 V
0
20
40
60
80
100
0 10 20 30 40 50 60
VGS - Gate-to-Source Voltage (V)
-Transconductance(S)gfs
TC = - 55 °C 25 °C
125 °C
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10 20 30 40 50 60
VDS - Drain-to-Source Voltage (V)
C-Capacitance(pF)
Ciss
Coss
Crss
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
10
20
30
40
50
60
70
80
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-to-Source Voltage (V)
-DrainCurrent(A)ID
25 °C
- 55 °C
TC = 125 °C
0.000
0.030
0.040
0.050
0.060
0.070
0 10 20 30 40 50 60 70 80
-On-Resistance(Ω)
ID - Drain Current (A)
RDS(on)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
0 20 40 60 80 100 120
-Gate-to-SourceVoltage(V)
Qg - Total Gate Charge (nC)
VGS
VDS = 30 V
ID = 40 A
DTU40P06
www.din-tek.jp
4. 4
TYPICAL CHARACTERISTICS
THERMAL RATINGS (25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(Normalized)-On-Resistance
TJ - Junction Temperature (°C)
RDS(on)
VGS = 10 V
ID = 17 A
- 50 - 25 0 25 50 75 100 125 150
Source-Drain Diode Forward Voltage
0.0 0.3 0.6 0.9 1.2 1.5
VSD - Source-to-Drain Voltage (V)
-SourceCurrent(A)IS
100
10
1
TJ = 25 °C
TJ = 150 °C
Drain Current vs. Case Temperature
TC - Case Temperature (°C)
-DrainCurrent(A)ID
0
5
10
20
30
40
50
0 25 50 75 100 125 150
Safe Operating Area
1
10
100
0.1 1 10 100
-DrainCurrent(A)ID
TC = 25 °C
Single Pulse
RDS(on)*Limited by
P(t) = 0.01
P(t) = 0.001
P(t) = 0.0001
P(t) = 1
P(t) = 0.1
BVDSS
Limited
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10-4 10-3 10-2 10-1
NormalizedEffectiveTransient
ThermalImpedance
1
0.2
0.1
0.05
Duty Cycle = 0.5
Single Pulse
0.02
DTU40P06
www.din-tek.jp
5. 1
TO-252AA CASE OUTLINE
Note
• Dimension L3 is for reference only.
L3
D
L4
L5
b b2
e1
E1
D1
C
A1
gageplaneheight(0.5mm)
e
b3
E
C2
A
L
H
MILLIMETERS INCHES
DIM. MIN. MAX. MIN. MAX.
A 2.18 2.38 0.086 0.094
A1 - 0.127 - 0.005
b 0.64 0.88 0.025 0.035
b2 0.76 1.14 0.030 0.045
b3 4.95 5.46 0.195 0.215
C 0.46 0.61 0.018 0.024
C2 0.46 0.89 0.018 0.035
D 5.97 6.22 0.235 0.245
D1 5.21 - 0.205 -
E 6.35 6.73 0.250 0.265
E1 4.32 - 0.170 -
H 9.40 10.41 0.370 0.410
e 2.28 BSC 0.090 BSC
e1 4.56 BSC 0.180 BSC
L 1.40 1.78 0.055 0.070
L3 0.89 1.27 0.035 0.050
L4 - 1.02 - 0.040
L5 1.14 1.52 0.045 0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
Package Information
www.din-tek.jp
7. 1
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
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Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
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