This document summarizes the specifications and simulation results for a 1S1834 general purpose rectifier diode manufactured by Toshiba. It includes the diode's component details, SPICE model parameters, and simulations comparing the diode's measured and modeled performance for forward voltage, junction capacitance, and reverse recovery characteristics.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1S1834
MANUFACTURER: TOSHIBA
REMARK: TC=25C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. SPICE MODEL
*$
* PART NUMBER: 1S1834
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
.MODEL 1S1834 D
+ IS=303.24E-12
+ N=2.0713
+ RS=17.423E-3
+ IKF=2.3180
+ ISR=0
+ CJO=29.203E-12
+ M=.31696
+ VJ=1.0971
+ BV=300
+ IBV=10.000E-6
+ TT=427.04E-9
*$
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
1S1834
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.1 1.050 1.055 -0.495
0.2 1.100 1.094 0.573
0.5 1.150 1.152 -0.148
1 1.200 1.203 -0.250
2 1.270 1.267 0.228
5 1.400 1.404 -0.293
10 1.550 1.553 -0.181
20 1.800 1.780 1.117
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit
V2
0Vdc
D1
V2 = 300 V1
V1 = 0
TD = 0
TR = 10n
TF = 50ns
PW = 5us
PER = 10us 1S1834
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 29.432 29.432 0.000
0.1 28.555 28.625 -0.245
0.2 27.555 27.879 -1.176
0.5 25.576 26.087 -1.998
1 23.567 23.874 -1.303
2 21.062 21.070 -0.038
5 17.285 16.953 1.921
10 14.272 14.009 1.843
20 11.399 11.448 -0.430
50 8.555 8.674 -1.398
100 6.735 6.958 -3.319
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
50
D1
V2 = 10.98V V1
V1 = -9V
TD = 0
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us 1S1834
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 2960.00 ns 294.90 ns 0.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Reverse Recovery Characteristic Reference
Measurement
Trj =108(ns)
Trb=188(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004