Zinc Oxide Semiconductors Nanowires ( The ) For Gas Detection

Zinc Oxide Semiconductors Nanowires ( The ) For Gas Detection
Tin Oxide Semiconductors Nanowires(NW) for Gas Detection.
In the recent years nanoscale sensors have become more and more popular. When making a
nanostructure–based sensor the most important aspects that have to be taken into account are:
sensitivity, selectivity and stability. The way gas sensors function is determined by the convection of
electrical conductivity due to surface reactions such as oxidation or reduction caused by the
exposure to different types of gases. Recently a great quantity of effort has been put into resolving
important issues like novel sensing material resources, data analytical method (Fast Fourier and
wave transform, pattern recognition), measurement techniques (static and dynamic), fabrication
methods and ... Show more content on Helpwriting.net ...
Tin oxide gas sensors have been manufactured in the form of thin foils in which nanosized grains
are screen printed onto prefabricated electrons, followed by torching at high temperatures. These
sensors can easily detect substances like hydrogen, vapour particles emitted by alcohol, oxygen, and
dangerous gases like carbon monoxide [2–3]. This technology is desirable because it has a large
number of advantages: small dimensions, low production costs, low power consumption, on–line
operation and high compatibility with microelectric processing. Moreover the necessity for gas
sensors is very important due to the fact that many kinds of gases are emitted from various sources
into the places where we work, where we live or in the outdoors. Many of these gases are dangerous
to human beings and also to the environment [4]. Furthermore most gases have a very low
concentration therefore sensing devices must be able to detect the presence of this hazardous gases
very effectively and monitor them so that no life threatening problems develop. Therefore this
technology has a wide range of appliation, from industrial applications to household safety.
Nanowire sensor manufacture.
One dimensional (1–D) nanowires have found an application in the field of gas sensors due to their
high surface to volume ratio [3]. There are different ways 1–D NW can be fabricated:
The first way is to deposit slurry containing NW in a crystalline form onto an
... Get more on HelpWriting.net ...

Energy and Material Use in Semiconductor Devices
2 Articles The 1.7 Kilogram Microchip: Energy and Material Use in The Production of
Semiconductor Devices, E. D. Williams, R.U. Ayres Summary Kilogram microchip implants that
track people's movements or allow shoppers to purchase groceries with the wave of a finger may
soon be more than science fiction: One scientist is working to make them part of everyday reality.
The computer that controls the environment in Warwick's office recognizes his presence because the
implant – a glass capsule 23 millimeters long containing kilogram microchips – sends a unique
signal. The computer can then adjust the lights and heat to Warwick's pre–set preferences. The key
to implants' usefulness is that unique signal, which many speculate could be used as a cross between
a social security number and a PIN, allowing computers in your home, workplace, car, grocery
store, and hospital to recognize you. You wouldn't have to worry about losing your keys again: Your
car and your house would automatically admit you. (Of course, if the implant broke or the
computers went down, you'd face the high–tech equivalent of losing your keys.) At the bank or
grocery store, implantees could transfer funds or buy provisions without ever having to reach for a
wallet or purse. Such implants might tempt criminals to attack individuals and forcibly remove the
implants in order to steal a person's identity or access his bank account. However, implants could be
designed to give off a distress signal if they were

Raman Spectra Of SP0. 7 Lab Report
Figure 6 shows the peak fitted curves Raman spectra of SP0.10, SP0.10A and SP0.10B in the range
200–800 cm–1 wavenumber. It is well known that the CuO is p–type semiconductor which typically
crystallizes into monoclinic structures and is defined by C26h (C2/c) space group. Three Raman
active (Ag + 2Bg) and six IR active (3Au + 3Bu) optical modes are predicted by group theory for
CuO. These normal lattice vibrations at the Γ point of the Brillouin zone are given on the basis of
group theory by the equation (Siddiqui et al 2016 c): Γ= 4Au+5Bu+Ag+2Bg. Based on the reported
zone–center optical phonon frequencies in CuO observed vibrational spectra were assigning to the
Raman active modes (Ag+2Bg) which peaks are located at 283.3cm–1, 329.8cm−1 ... Show more
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From the help of Kubelka–Munk (K–M) theory reflectance data was convert absorption mode [27].
As shown in figure 7 the as–prepared CuO nanostructures with different ratio of citric acid exhibit
different sensitivities to visible light, the absorption edge is shifted to shorter wavelength with
compact size and altered morphology. Our results point out not only the size but also the
morphology of the CuO nanocrystals affects the bandgap. It is quite observable from the figure 7b
that SP0.10A exhibits the hogher absorption properties in the visible region. Bhaumik, et al 2016
[28] reported the increase in absorption is highly desirable for better efficiency of a solar cell.
Therefore the SP0.10A sample exhibits the strongest absorbance and has a uniform flower–shaped
CuO crystal thus; we can say that the sample may be ideal solar absorbers. Figure 7: Kubelka–Munk
absorption spectra and Tauc's plot for the calculation of band gap of SP0.10, SP0.10A and SP0.10B.
Photoluminescence spectroscopy is an important tool to study the optical properties of a
semiconductor. Photoluminescence intensity may be directly correlated with the defect density in a
fluorescent material. However, the CuO has low emission efficiency (CuO is not a fluorescent
material) so there is a lack of luminescence data for copper oxide. Furthermore, recent theoretical
calculations indicate that although Cu vacancies are the most stable defects in CuO, they do not
introduce new states within the

Application Of Flexible All Graphite Paper Based Field...
Flexible All Graphite Paper based Field Effect Transistor for motion detection using strain sensing
Srinivasulu Kanaparthi, Sushmee Badhulika*
Department of Electrical Engineering, Indian Institute of Technology Hyderabad, Hyderabad,
502285, India.
*Corresponding author: E–mail: sbadh@iith.ac.in; Telephone: 040–23018443; Fax: 04023016032
Abstract
Here we report the fabrication of a flexible all carbon field effect transistor (FET) using a low cost,
recyclable and biodegradable cellulose paper as both substrate as well as dielectric and pencil
graphite as source, drain, channel and gate without using any other expensive, toxic or non–
biodegradable materials. The electron and hole mobility's of FET are observed to be 180 and 200
cm2v–1s–1 respectively which are comparable to the recently reported values of paper FET with
polymer dielectric and cellulose composite dielectrics. The FET was utilized as a strain sensor
which shows good sensitivity for low strains of both tensile and compressive type. The mobility of
the FET increases with increase in compressive strain and decreases with increase in tensile strain.
The sensitivity of the FET sensor increases with the increase in the gate voltage.
HERE YOU CAN MAKE A COMMENT ON HOW THIS STRAIN SENSOR IS BETTER THAN
SILICON STRAIN SENSORS IN PERFORMANCE.
Further we investigated the performance of the sensor by integrating it with hand gloves to detect
human motion. The results obtained indicate that the sensor can be utilized

IGBT Essay
Very high power IGBTs
Ultra high power, high voltage, power electronics is on the verge of a new era. Two new power
semiconductor technologies, the high voltage IGBT are improving the performance, simplifying the
design and increasing the reliability of applications ranging from 100's of KVA to many MVA.
In recent years, the performance of industrial power electronics for line voltages up to 600VAC has
advanced rapidly. Initially, improvements were made possible by the development of high current
isolated base darlington transistor modules. More recently, stunning improvements in IGBT
technology has driven performance to new levels while substantially reducing cost. Over the same
period, ultra high power, high voltage, applications ... Show more content on Helpwriting.net ...
In applications operating from AC line voltages of 600VAC and less, IGBTs with blocking voltage
ratings of up to 1400V have provided an efficient low cost means of constructing high performance
voltage source inverters. In higher voltage applications GTOs (Gate Turn–Off thyristors) have been
used but their limited switching frequency of 300Hz or so, offers little advantage when compared to
other circuit topologies. Clearly, a higher performance, high power semiconductor device is needed.
Today, newly commercialized high voltage IGBTs with blocking voltages to 3300V
The HVIGBT (High Voltage IGBT) module is a logical extension of the technology used in
conventional IGBTs. Several technical challenges had to be overcome in order for these devices to
attain the desired characteristics. First, an IGBT chip with high blocking voltage, reasonably low on
state voltage, and sufficiently wide safe operating area had to be developed. In lower voltage
devices, a buffer layer structure (a.k.a. PT–Punch Through) similar to a PIN diode (figure 1a) was
found to be optimally effective for this purpose. The buffer layer in these devices was formed as part
of the epitaxial silicon wafer. Adapting this structure to a high voltage device requires a very thick
epitaxial layer which presents serious cost and yield problems. One way around this problem is to
use an NPT (Non Punch–Through) structure (figure 1b) for the device. The NPT structure does not
have a buffer layer and is

How Technology Has Broadened The Spectrum Of Applications
4. EMERGING DEVICES
The continuous scaling of CMOS technology has broadened the spectrum of applications. Complex
architectures can be now realized on a single chip. The integration of existing and new technologies
with CMOS extends the scope of implementation.
Figure 3 : Relationship among More Moore, More–than–Moore, and Beyond CMOS
4.1 More than Moore
The functional diversification of the semiconductor based devices by non–digital components is
More than Moore implementation. These non–digital functionalities may not scale at the same rate
as the digital components. The non–digital components are capable of interacting with outside world
through sensors and actuators. This integration of functions like analog and mixed signal processing,
addition of passive, power components and bio chips increases the range of applications such as
communications, automotive, biomedical and security. As integration grows so does the challenges,
it demands the need for multidisciplinary research programs to run in pace with growing scientific
fields.
4.2 More Moore
The expansion of the CMOS by conventional dimensional scaling to reduce the cost per function
and improved performance is More Moore. This also comes with resource scarcity such as power
availability and reduced flexibility in interconnects. Power dissipation becomes a critical problem in
such devices due to large logic circuits. Since the battery capacity has not improved much but the
amount of logic in SoC almost doubles

Comparison Of Various Metallization Schemes For Ohmic...
Comparison of various metallization schemes for ohmic contacts to n–type GaN.
Abstract:
Three ohmic contact metallization schemes to n type GaN (n–GaN) namely Ti/Al/Ni/Au,
Ti/Al/Mo/Au and Ti/Al/Re/Au are compared with respect to their contact resistance, root mean
square values of surface roughness, annealing temperature and the mechanism of ohmic contact
formation.
Introduction:
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor with a bandgap of 3.4 eV
commonly used in light–emitting diodes since the 1990s. GaN has a low sensitivity to ionizing
radiation which makes it a suitable material for solar panels on satellites. Various military and space
application also benefit from the usage if this radiation hardened material. Besides the wide
bandgap, high breakdown field and high saturation velocity of GaN make it very promising for high
power, high–speed and high temperature electronic devices. GaN devices offer five key
characteristics: high dielectric strength, high operating temperature, high current density, high speed
switching and low on–resistance. These characteristics are due to the properties of GaN, which,
compared to silicon, offers ten times higher electrical breakdown characteristics, three times the
bandgap, and exceptional carrier mobility. Low resistance Ohmic contacts with a smooth
morphology, and good edge acuity and thermal stability are imperative in the successful
implementation of all these devices, particularly high power devices

Black Phosphorus Research Paper
Black Phosphorus was discovered in 1914. There was little known about it when it was first
discovered but that has changed in the past few decades. Researchers are looking into using black
phosphorus as a semiconductor, in electronics, optics, and LEDs. Many factors are to be considered
when thinking of using black phosphorus as a semiconductor, the cost, if large–scale synthesis is
possible while to being to complicated or expensive. Black Phosphorus has the potential to be a
great semiconductor because of its large tunable band gap. These are qualities that are wanted for
semiconductors however there needs to be further studies regarding black phosphorus to gain a
better understanding. Black phosphorus has many benefits and flaws compared ... Show more
Researchers talk about black phosphori first synthesis in 1914, cost, how it is made, why
semiconductors are important, and how they work. There needs to be more done on black
phosphorus and black phosphorus as semiconductors. There are still a lot of discoveries to be made;
black phosphorus needs to be made stable in atmospheric conditions, cost effective, and have a high
yield. When these obstacles have been overcome, black phosphorus should be ready for testing in
electronic devices. Research involving black phosphorus has increased in popularity in the past 5
years. Black Phosphorus has a long way to go before devices with it in them will be on the market
but in the future there is a good change that there will be phones, computers, tablets and more that
have black phosphorus

Physics Of Semiconductors Essay
The Physics of Semiconductor Devices The purpose of this paper is to give a greater understanding
of the semiconductor world, for Physics 100 students who have a little knowledge of electronics. I
will cover conductors, insulators, semiconductors, and the operation of a diode and a transistor. The
reason that it is important to understand these devices is the vast effect that they have had on our
modern world. Our lives are filled by electronics, especially in this computerized age that we live in,
and I have found that a knowledge of some electronics has greatly helped my understanding of the
many electronic devices that we deal with on a daily basis.
To understand the physics of a semiconductor device it is first necessary to ... Show more content on
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The outer shell of electrons that orbit the nucleus of an atom is called the valance shell. This is what
makes a copper atom conduct. For a copper atom the number of electrons is one. When a charge of
electricity is placed in the end of a wire the electrons move into the wire. Since there is only one
electron in the valance shell of a copper atom it can be easily dislodged with a small amount of
energy causing it to jump to the next atom. This will then cause the valance electron of that atom to
jump to the next atom and so forth. This movement happens very fast making it possible for a large
number of electrons to move through the wire. An example of a conductive atom is shown figure 1.
Now we will move onto other materials that are involved with electronics. The next group of
materials that will be discussed are insulators. An insulator is a material that does not conduct
electricity at all but will resist or stop it from traveling further. An insulating atom has eight
electrons in its valance shell which makes this shell complete. Eight is the most electrons that any
atoms can have in their valance shell this is why these are called insulators, no more electrons can fit
in the valance shell of these atoms.
We have now discussed the two extremes in electronic materials; a conductor, and an insulator we
will now move to a material that lies in between these two, a semiconductor. The

Swot Analysis Of Intel
Individual Assignment– Intel Corporation (Intel)
1a. Briefly provide some background information to the organisation. Then provide an overview of
the products/services/raw ingredients that your firm acquires from the 'upstream' business suppliers
as well as provides the 'downstream' business customer.
Intel is an American multinational business established in July 18, 1968. It is currently the largest
and most valued semiconductor chip makers in from 1992 to 2014 (Intel, n.d.), and according to
Interbrand, the world's leading brand consultant, it is currently the 12th powerful brand in the world
and 15th best global green brand (Interbrand, 2014). In 2015, it is reported that the company posted
revenue and non–GAAP (generally accepted accounting principles) EPS (earnings per share) of
$13.2 billion and $0.55, respectively (Shields, 2015). The business's main rivalling companies
include IBM, Nvidia, Advanced Micro Devices, Microchip Technology, Avago Technologies,
Oracle, and other businesses within the hardware manufacture and software designing fields. The
company creates technological hardware such as platforms that integrate various components and ...
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Daifuku Co. Ltd is a Japanese company which assists Intel in work–in–progress logistic transporting
and storage. KLA–Tensor Corporation processes capital equipment control and services for Intel.
Furthermore, they partnered with Siliconware Precision Industries Co. Ltd., which they assist in
business specializing semiconductor assembly test the services of products. Tokyo Electron Limited
provides with dry etch and wet etch services and thermal and test systems. Tosoh SMD Inc. provides
sputtering targets for physical vapour deposition. Veolia Environment assists Intel with waste
management services, and lastly Moduslink Global Solutions Inc. provides integration and supply
chain services for Intel customer

Silicon Based PV Cells
CHAPTER 2 – SILICON BASED PV CELLS 2 2.1 Doping Procedure of Silicon based PV Cells A
Silicon solar PV Cell is a device which is made up of semiconductor materials that produce
electricity when exposed to light energy. [1] The doping process of a Silicon based PV Cell works
by the photovoltaic material converting the light energy, photons, it absorbs into electrical energy.
[1] Light (Photon) Energy ––––––– Electrical Energy Using a doping process, a p–n junction is
created in silicon as shown below: From the image above the photons, light energy, prompt the
electrons flowing from the n–junction to the p–junction creating an electric current flow. [1] This is
highlighted below: The process of doping involves the addition of atoms with different number of
electrons so it creates an unbalanced number of electrons on the material that is being doped, in this
case Silicon. [1] The material being doped, in this case Silicon will carry a negative charge if the
base material absorbs excessive electrons. However, if the base material, Silicon, absorbs to little
electrons then the material will carry a positive charge. [1] To achieve a doped material, using
Silicon then there are 2 methods: Ion implantation of diffusion. These methods are carried out using
Boron (B) to form a positively charged doped material and Arsenide (As) or Phosphorus (P) to form
a negatively charged doped material. This is shown below: Ion Implantation can be achieved at
room temperature for

Microelectromechanical Systems (MEMS) are systems that are...
Microelectromechanical Systems (MEMS) are systems that are designed on a micro metre scale and
have become more popular as the demand for devices to get smaller has increased. The main uses of
these systems are for sensors, such as accelerometers and gyroscopes and other such devices like
microscopy and inkjet nozzles for example. There are many materials that can be used for MEMS as
the cost of the material is almost eradicated due to the micro size of the systems being produced.
This brings materials such as gold, platinum and diamond can be used, as these materials have some
properties which are very desirable for a MEM systems. The most common material that is currently
used in MEMS is silicon and silicon based compounds as they ... Show more content on
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The piezoresistivity properties of diamond allow it to be used for a variety of applications at
temperatures of up to 700oC . Also diamond films can actually be used as the active sensor layer
themselves in certain situations . This has been found useful for strain gauges and accelerometers as
well as other areas. It is due to the piezoresistive gauge factor of diamond to be between 70–4000
and remains as such even at high temperatures. Another advantage of using diamond in these
situations is that because its elastic modulus is much greater than other materials that would be used
such as Silicon or silicon based compounds the diamond films can operate at much higher
frequencies. Although it has been believed that only polycrystalline materials have these
piezoresistive properties, in recent times the same properties have been found in amorphous films of
both silicon and diamond.
As devices get smaller the surface to volume ratio increase dramatically down to the micrometre
scale which means that at these levels of design the surface phenomena become more important.
The forces which create these surface phenomena such as Van der Waal's capillary and local shear
forces due to the viscosity become the main factors at a

The Atom And The Atomic Of The Energy Level Of Its Electrons
This energy will excite the affected atom, raising the energy level of its electrons. If these electrons
are excited past the range of the nuclei's binding attractive force, then the electron will jettison from
the atom. These two particles, the ionized atom and electron, are now detectable indicating the
presence of a neutron. This is the material ionization phenomenon (Crane and Baker). The nuclear
reaction induction phenomenon occurs when a larger nucleus is struck by a neutron. There is a
probability that the nucleus will absorb the neutron and become unstable. This instability results in
the decay of gamma rays or other particles such as alpha particles and protons. These particles are
easily detected and also indicate the presence ... Show more content on Helpwriting.net ...
In the conversion of alternating current to direct current, electrons from alternating current will also
enter the diode on the left. However, in part to the oscillating nature of alternating current, the diode
output of direct current will be relatively choppy, since electrons can only move towards the electron
holes in the P–type semiconductor (Kuphaldt).
As a result of the choppy nature of the direct current output, a capacitor is used to smooth the
electron fluxes (Copello). A capacitor is an electrical component that stores charge. In its most basic
form, a capacitor is made up of two metal plates with an insulated layer between them
("Capacitors"). As the electrons flow into the capacitor, their concentration and charge builds up on
one plate. Additionally, due to the repulsive nature of electrons, the buildup of electrons on one plate
will push the electrons from the other plate, creating a current out of the capacitor ("Capacitors").
This makes one plate positively charged and the other negatively charged. At this point, the
capacitor is storing energy. So, the capacitor smooths the fluctuating direct current by slowly
releasing its charge between input spikes ("Capacitors"). This generates a more consistent flow of
direct current to the electric grids.
Another primary component of the Farnsworth Fusor is its two concentric electrical grids. The DC
current produced by the diode will be run

High Demand For Computer Chips
Computer chips are widely used today in computers, phones, tablets, and other electronics. The high
demand for computer chips requires a manufacturing process that is accurate as well as efficient. In
the past, chips have been manufactured out of many different materials including copper oxide and
germanium. Today, computer chips are manufactured using silicon due to its versatility as a
semiconductor and how readily available it is in the environment. This paper includes how silicon
became an important semiconductor, a brief history on the process of integrated chip manufacturing,
an analysis of the shrinking of manufacturing process, and newer methods of three dimensional
lithography. Silicon and germanium are used as semiconductors ... Show more content on
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Different combinations of n and p–type doping are used to create electronic components such as
transistors, capacitors, and diodes. Silicon became the top semiconductor in the 1960s due to the
oxide layer it forms, its ability to perform at higher temperatures, and its availability in nature. When
exposed to air, silicon forms a silicon dioxide layer on its surface that serves as an excellent
insulator allowing for small interference between different components. Compared to germanium,
silicon is able to perform at higher temperatures which becomes important when there are several
different components on a chip operating and generating heat. Silicon is also readily available in
nature, as it is a main component in sand whereas germanium is difficult to extract in large
quantities making it more expensive. Computer processors and graphics processors have become
increasingly advanced over the past 15 years, and require a process that is able to lay billions of
transistors in a short amount of time. This process starts out with a silicon wafer, which is made
from sand that it is melted down and extruded into a cylinder of perfect silicon lattices. This cylinder
is cut into several eighteen inch diameter disks that are close to one millimeter thick. The silicon
wafer is then annealed to remove the internal stresses of the lattice and then an

Taking a Look at Quantum Dots
To begin with in layman's language or maybe for a person who has limited or little knowledge about
physics, quantum dots are materials that are small but are sufficient to exhibit quantum mechanical
properties. Quantum dots were first discovered in 1980. They exhibit electronic properties which are
between semiconductors and discrete molecules. That is the very reason for the unusually high
surface to volume ratio. The most visible use of quantum dots is in fluorescence where the
nanocrystal is capable of producing different distinctive colors determined by their particle size.
For the more experienced and the more technical personals, Quantum dots are semiconductor
nanostructures confining the motion of the conduction band electrons, the valence band holes or the
excitons and are in all the three spatial directions. The excitons are confined to the three spatial
directions only. There would be a doubt about what excitons is thus the definition; an exciton is a
state or rather a bound state of an electron or a hole which are attracted to each other by the
coulombs force. They are neutral quasiparticles that are generally existent in semiconductors and
also in insulators. They may also be found in some liquids.
The reasons for confinement can be electrostatic potential which can be due to external electrodes,
strain, impurities and doping. According to a lot of research that has been going on in this field, a
quantum dot has a discrete quantized energy spectrum.

Organic Semiconductors Abstract
Organic semiconductors
Abstract:
This paper covers advantages of organic semiconductors over the conventional one's and also the
use of organic semiconductors and polymers to make OLED's and PLED's.
Introduction:
An organic semiconductor is an organic material with semiconductor properties. They can be
divided into single molecules, oligomers or polymers. Many organic materials are very colorful and
these materials interact very strongly with light. Due to this reason they are used in applications like
light emitting diodes and photo voltaic cells. Although these materials are not intended to replace
silicon–based technologies, organic semiconductors can help to realize fully flexible devices for
television displays, ... Show more content on Helpwriting.net ...
5. Production: organic materials can be produced with relative ease as compared to conventional
semiconductors as it does not involve the need of high temperatures which requires lot of energy.
6. Encapsulation: organic devices have to be protected from any kind of environmental influences.
Hence they are encapsulated in between two plastic foils other such materials also can be used to
protect them. [1]
Charge transport in organic semiconductors:
Various materials are available that transport either electrons or holes. This distinction does not rely
on the actual ability of materials to transport charges ( ie. On the actual value of charge mobility).
But rather reflects the ease of charge injection from electrodes traditionally used in devices. In that
context, a material is often referred to as a hole [electron] transporter when its ionization energy
[electron affinity] closely matches the Fermi level of the electrode material. Materials that transport
both electrons and holes are also available nowadays these materials are called ambipolar transport
materials.[2]
The charge transport in organic materials is similar to that in the conventional semiconductors, the
charge carriers (electrons or holes) have to overcome the barrier potential formed at the junction of
metal and the semiconductor. The carriers are then injected into the organic semiconductor layer.

Universal Motors Aquires
SCMA 311
SPECIAL TOPICS IN SUPPLY CHAIN MANAGEMENT
SYNDICATE ASSIGNMENT
DUE DATE: 14th SEPTEMBER 2012
Assignment Brief
In your study syndicates, you are expected to read, analyse and interpret the key underlying issues of
the following case–study titled "The Universal Motor Company Acquires Semiconductors". Six (6)
questions have to be answered and these questions can be found at the end of the case study.
Your answers to the questions must relate to the issues in the case, however you are expected to
support your responses with appropriate and relevant literature from the prescribed text: Monczka et
al, 2009. You may also reference internet ... Show more content on Helpwriting.net ...
It seemed likely that this growth would be replicated by the entire auto industry. However, this
growth did not increase the market position of the auto industry, as the semiconductor industry was
growing faster than the automotive industry market component. Based on these observations, it
became clear that something had to change. The 1980 semiconductor supply situation was
intolerable. Of equal or greater concern, projected growth in electronics requirements appeared to be
unsupportable.
Forward Planning In 1980, the concept of forward planning, business planning, or strategic planning
was not commonly associated with the supply function. Supply management was most often thought
of as a reactive function organized to support manufacturing. Marketing, on the other hand, was
more often thought of as the proactive organization focused on the future of the firm. The failure of
management to recognize the strategic and futuristic implementation of supply management limited
innovative actions when dealing with a firm's supply world. The 1980 situation demanded new
thinking and a new approach to the acquisition of semiconductors. The supply managers involved
had little choice, given the circumstances. Supply had no experience with strategic planning. There
were no guidelines to follow. The responsible supply managers started with a clean piece of paper, a
mission, and a

Power Circuits Of Electric Power
CHAPTER 1
INTRODUCTION
1.1 Research Background
Power electronics circuits convert electric power from one form to other using electronic devices.
By using semiconductor devices as switches power electronics circuits function, thereby controlling
or modifying a voltage or current. Power electronics application range from high–power conversion
equipment such as dc power transmission to everyday appliances, such as cell phone chargers,
cordless screwdrivers, power supplies for computers, and hybrid automobiles. Power electronics
includes applications in which circuits process miliwatts or megawatts. Power electronics include
conversion of an unregulated dc voltage to a regulated dc voltage conversion of ac to dc, conversion
of dc to ac, and conversion of an ac power source from one amplitude and frequency to another
amplitude and frequency. These power converters are classified as rectifiers, AC voltage controllers,
DC choppers and inverters, which covers wide area of residential, commercial and industrial
applications, including computers, transportation and power utilizes [1].
Power electronic converters, especially DC/AC inverters have been extending their range of use in
industrial application because they provide better system efficiency, reduced energy consumption
and improved quality of power. The output voltage of inverter could be fixed or variable at a fixed
or variable frequency and output waveforms are therefore made up of discrete values, producing fast
transition

The Synthesis Of Semiconductor Devices
The synthesis of semiconductor devices in microelectronics and photonics applications has always
fascinated me, and the field of developing electronic and photonic solid–state devices is a field that I
find continuously interesting and rewarding. The physics behind these devices and their
manufacturing are consistently setting new limits or allowing for new methods that produce useful
applications. By embracing and driving research, industries which rely on evolving electronic
devices and methods enjoy a rapid pace of development. Because of this, we see photonic solutions
proposed as an alternative to the more physical electronic devices. Moreover, we see approaches that
integrate these worlds. My interest in these fields will require an extensive academic and research
foundation regarding devices that rely heavily on quantum, electromagnetic and other phenomena. It
will also require me to initially focus my efforts before exploring a breadth of other fields and
applications that will become an integral part of my research repertoire. My academic interests and
career objectives span both theoretical and practice–based branches of learning. I have seen how
many factors in epitaxial growth of groups III and V semiconductor materials may render a great
theoretical design difficult to realize. The challenges in solving and computing for several equations
and in reaching a trade–off in designs also need to prove viability. This is only obtainable through a
deep understanding

Sample Letter : A Program Director Who Is A Great Resource...
ACKNOWLEDGMENTS
I would like to express my deepest appreciation and thanks to both of my advisors Dr. Gamini
Sumanasekera, and Dr. Jacek Jasinski. I am grateful to Dr. Gamini for his great support and
guidance throughout my entire PhD program. In science, he is exceptionally knowledgeable and has
a great drive for developing homemade equipment and experimental setup as they become required
in a project. I am also thankful to Dr. Jasinski whose invaluable mentoring and encouragement were
vital to the completion of this dissertation. I have been inspired by his efforts in contributing to the
scientific community. I would like to acknowledge my Ph.D. committee members Dr. Chakram S.
Jayanthi, Dr. Ming Yu, and Dr. Jinjun Liu for their valuable ... Show more content on
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I was lucky to work with wonderful research associates and post–doctoral fellows during my
research. I wish to express a sincere thank you to Dr. Bijandra Kumar, Dr. Ramchandra K. Rao, Dr.
John Samuel Dilip Jangam, Dr. Dominika Ziolkowska, and Dr. Ruvini Dharmadasa. I am thankful to
my former and current labmates, George Anderson, Ruwantha Jayasinghe, Venkat Kalyan Vendra,
Swathi Sunkara, Ruchira Dharmasena, Rong Zhao, Sahar Pishgar, and Brandon Lavery.
My deepest gratitude and love to Farzaneh Hoveyda, my love, life partner, and soulmate who has
been a constant source of encouragement and support. She also helped me in writing this
dissertation through great discussion about various scientific aspects. I am heartily thankful to my
parents, Faramarz, Soroor, and my brother, Misagh, for tremendous emotional support.
ABSTRACT
SYNTHESIS AND FUNDAMENTAL PROPERTY STUDIES OF ENERGY MATERIAL UNDER
HIGH PRESSURE
Meysam Akhtar
April 19, 2017
Recently, high–pressure science and technology has flourished and rapidly advanced to impact a
wide domain of materials and physical sciences. One of the most substantial technological
developments is the integration of samples at ultrahigh pressure with a wide range of in–situ probing
techniques. Applications of extreme pressure have

Advantages And Disadvantages Of Traditional Infrared Touch...
Traditional Infrared Touchscreens
Touchscreen interactive devices have become increasingly important in both consumer and
commercial applications. They're a large component of many everyday devices from your mobile to
your chromebook. They're "electronic visual displays that can detect the presence and location of a
touch within the display area (Bhalla, 2010)." There is considered four different groups of
touchscreen technologies each with its distinct advantages and disadvantages with some of the
variations containing sub groups within them: Capacitive, surface acoustic wave (SAW) and infrared
(Bhalla, 2010). The focus of this article will be on infrared touchscreens, specifically traditional
infrared touchscreens. Traditional ... Show more content on Helpwriting.net ...
The projecting mechanism of the IR touchscreen consist of Infrared LEDs, which lines two adjacent
side of the screen's bezel and the receiving component, that are commonly phototransistor, lines the
side opposite to the LEDs (Walker, 2012). Starting with the receiving component, the
phototransistor, it is a transistor that is sensitive to light. The basic concept that paved the path for
phototransistors was uncovered by Albert Einstein in his Nobel prize winning 1905 paper
(Handbook of Photoelectric Sensing, 1993). Einstein made the bold proposal that light traveled
through space in concentrated bundles (Known today as protons) (Handbook of Photoelectric
Sensing, 1993). Einstein also outlined how protons when striking materials liberate photoelectrons,
and the energy from the photoelectrons can be used to create a small current (Handbook of
Photoelectric Sensing, 1993). The property of a small current being produced by the striking of
photons exploited by transistors in order to create the photodetector, the phototransistor. In 1948, a
year after the transistor was invented, John Northup Shive created the first example of a
phototransistor where he used a beam of light instead of a wire as the emitter of a point contact
transistor, generating holes that flow to the collector (Electronic Circuits and Diagram–Electronics
Projects and Design, 2013). The first application of the

Three Ohmic Contact Metallization Schemes
Abstract:
Three ohmic contact metallization schemes to n type GaN (n–GaN) namely Ti/Al/Ni/Au,
Ti/Al/Mo/Au and Ti/Al/Re/Au are compared with respect to their contact resistance, root mean
square values of surface roughness, annealing temperature and the mechanism of ohmic contact
formation.
Introduction:
Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor with a bandgap of 3.4 eV
commonly used in light–emitting diodes since the 1990s. GaN has a low sensitivity to ionizing
radiation which makes it a suitable material for solar panels on satellites. Various military and space
application also benefit from the usage if this radiation hardened material. Besides the wide
bandgap, high breakdown field and high saturation velocity of GaN make it very promising for high
power, high–speed and high temperature electronic devices. GaN devices offer five key
characteristics: high dielectric strength, high operating temperature, high current density, high speed
switching and low on–resistance. These characteristics are due to the properties of GaN, which,
compared to silicon, offers ten times higher electrical breakdown characteristics, three times the
bandgap, and exceptional carrier mobility. Low resistance Ohmic contacts with a smooth
morphology, and good edge acuity and thermal stability are imperative in the successful
implementation of all these devices, particularly high power devices which require high power
conversion efficiency and heat management. The

Application Of Semiconductors And Technology
TERM PAPER
On
Application of Semiconductors
Submitted to Amity School of Engineering and Technology
Guided By: Submitted By:
Mr. Gaurav Yadav Tirthankar Das Enrol. No.–A2324613041 Roll No.–41
AMITY UNIVERSITY UTTAR PRADESH
GAUTAM BUDDHA NAGAR
AMITY SCHOOL OF ENGG. AND TECHNOLOGY
WEEKLY PROGRESS REPORT (WPR)
For the week commencing: From 19th May 2014 to 25th May 2014
WPR (i.e. 1, 2, 3 etc.) : 3
Enrolment Number : A2324613041
Program : B.Tech. (EEE)
Student Name : Tirthankar Das
Faculty Guide's Name : Mr. Gaurav Yadav
Co– Guide's Name : –
Project Title : Application of Semiconductors
TARGETS SET FOR THE WEEK : To have an insight into different types of Semiconductors
PROGRESS/ACHIEVEMENTS FOR THE WEEK : An effort to this presentation after Study and
Cross references on this subject.
FUTURE WORK PLANS : Real field application of semiconductors
Declaration by Student

I, Tirthankar Das, student of B.Tech (EEE) hereby declare that the project titled
"Application of Semiconductors" which is submitted by me to

Comparing The And Hetero Junctions
3.1 Homo– and Hetero–junctions
When the semiconductor materials are homogeneous throughout the entire structure is called a
semiconductor homojunction. Materials used to form a homojunction will have similar energy
bandgaps, On the other hand, when two different semiconductor materials are used to form a
junction, the junction is called a semiconducror heterojunction. The hetero junction is formed with
narrow bandgap material with wide bandgap material. Figure 1 shows three possible combinations.
When the forbidden band gap of wide bandgap material completely overlaps the bandgap of narrow
bandgap materials then it is called straddling which is applicable for most of the heterojunctions. In
staggered, a fraction of wide bandgap and narrow band gap are merged tog ether. In case of broken
gap there is a bandgap itself between energy bandgaps of different semiconductor. Fig.1. different
types of heterojunction (a) straddling (b)staggered (c) broken gap
Metal–semiconductor junction is an example of heterojunction. This junction can be created by
depositing a metal such as Al or Gold or Ag over a semiconductor (ptype/n type) wafer by different
deposition techniques (e–beam/thermal evaporation or sputtering/CVD). Depending on the work
function of the metal, this type of junction may behave as ohmic or schottky contacts. as the name
suggests if the contact is ohmic, the current –voltage relationship is linear as per Ohm's law. For
ohmic contact it is mandatory that the

The Most Important Qualities of Content in Research
There are three important qualities of content that researchers use as an assumption for most every
research. The first is the kind of atoms that the content is created up of. You have your fairly neutral
components and your substance components. Atom comes from the Ancient term atoms significance
inseparable. (Trefil, 2010) Atoms create up everything we can see, therefore content, and atoms
have very different qualities within themselves, as well as having different methods of being
organized or of connection together, all of which impact the actual and substance qualities of
whatever is created up of those atoms. Most components either perform electric current or don't
succeed to perform electric current. However, there is a third kind of content that is not a really
excellent electric conductor, and simultaneously, is not really an excellent insulator either. These
components are known as semiconductors, such as rubber and germanium (Trefil, p. 243). The fairly
neutral components have the same quantity of protons and electrons, which generally terminate each
other out making them fairly neutral. The substance factor offers with mixing more than one factor.
The second is the way those atoms are organized. An excellent example of this is by evaluating
atoms of fluid and atoms of shades. For example the atoms of fluids shift around freer than atoms of
shades which are loaded together. The third is the way the atoms are insured together. There are for
key qualities to

The Contamination Free Production Process Of The Future...
There is an impressive argument to made by some critics that the semiconductor industry considers
the contamination free production process of its state of the art semiconductor wafers, paramount to
that of the future health and safety concerns of its labor force. Does this argument stand? Does there
in fact exist a hostile environment for the industries microchip production workers and could it play
a secondary role to the concepts of innovation and profits? Could the handling of known toxic
materials in the microchip production process and their effects on the human body, conveniently be
overlooked, in an attempt to fulfill the industry's primary directive of advancing technological
insight in accordance with Moores law 18 month cycles? This industry is highly innovative and
knows that every 18 months the amount of transistors which can be etched on to a silicon wafer
increases, thus chip performance doubles and so does the potential profits. This results in technical
development which at times can be so fast that it's difficult to keep up with advances and fully
examine them. And what is even worse is that you can add to it the fact, that it is common practice
and procedure among the semiconductor chip producers to contain their production processes as a
form of trade secret in order to advance their own technological breakthroughs. It is not difficult to
identify the potential health hazards experienced by those who are involved in the occupation of
semiconductor wafer

Semiconductors: The Silicon Chip Essay
Semiconductors: The Silicon Chip
Silicon is the raw material most often used in integrated circuit (IC) fabrication. It is the second
most abundant substance on the earth. It is extracted from rocks and common beach sand and put
through an exhaustive purification process. In this form, silicon is the purist industrial substance that
man produces, with impurities comprising less than one part in a billion. That is the equivalent of
one tennis ball in a string of golf balls stretching from the earth to the moon.
Semiconductors are usually materials which have energy–band gaps smaller than 2eV. An important
property of semiconductors is the ability to change their resistivity over several orders of magnitude
by doping. Semiconductors ... Show more content on Helpwriting.net ...
They began studying the electrical properties of semiconductors which are non–metallic substances,
such as silicon, that are neither conductors of electricity, like metal, nor insulators like wood, but
whose electrical properties lie between these extremes. By 1947 the transistor was invented. The
Bell Labs research team sought a way of directly altering the electrical properties of semiconductor
material. They learned they could change and control these properties by "doping" the
semiconductor, or infusing it with selected elements, heated to a gaseous phase. When the
semiconductor was also heated, atoms from the gases would seep into it and modify its pure, crystal
structure by displacing some atoms. Because these dopant atoms had different amount of electrons
than the semiconductor atoms, they formed conductive paths. If the dopant atoms had more
electrons than the semiconductor atoms, the doped regions were called n–type to signify and excess
of negative charge. Less electrons, or an excess of positive charge, created p–type regions. By
allowing this dopant to take place in carefully delineated areas on the surface of the semiconductor,
p–type regions could be created within n–type regions, and vice–versa. The transistor was much
smaller than the vacuum tube, did not get very hot, and did not require a headed filament that would
eventually burn out.
Finally in 1958,

An Industry Analysis of Samsung Essay example
Question 1) How attractive is Samsung's primary (core) industry? Conduct an industry analysis.
Five Forces Model: 1. Barriers to Entry
Because of the extremely intricate and sophisticated nature of manufacturing semiconductors, a
competitor should expect high initial capital requirements to build facilities needed for production.
Cost to build a new semiconductor fab has gone up from $200 million in 1985 to $3 Billion in 2004.
Incumbent companies have capabilities to design newer generations of semiconductors with greater
amounts of memory and processing abilities that make older generations obsolete. Older generations
tend to drop half their amount in price one year after a new model is reduced (exhibit 6). The United
States ... Show more content on Helpwriting.net ...
The business level strategy of Samsung's memory chip business unit is an integrated strategy.
Remarkably, they have both a cost advantage and a value advantage over their competitors. In this
section we will describe how Samsung "widens the wedge" through cost and value drivers. The data
presented in Appendix 1 shows that Samsung's cost advantage accounts for majority of their
competitive advantage.
Value drivers: quality/reliability; large product mix including frontier products; customization; HR
Policies; and employees.
Cost drivers: economies of scale; learning and experience curve; product design; and single
production Site.
Learning and experience Curve: Between 1983 and 1985, Samsung allocated more than $100
million in into DRAM technology, even paying another firm to teach them how to produce 64k
DRAMs. As the market grew, firms tried to catch up to where Samsung already had a foothold. To
further make advancements efficiently, Samsung has had separate R&D groups compete within
their company to come up with the same solution.
Product Design: The chairman chose a stacking design that proved be advantageous over companies
that chose a trenching design. A core design was also used for their customized products.
Economies of scale: Samsung invested $1 billion dollars to create a production process that made a
12 inch wafer. A larger wafer meant more chips could be cut at the same time. See A2
Single production Site: It is estimated that this saved

Case Study Of Aemulus Holdings Berhad
AEMULUS HOLDINGS BERHAD
Background of company
Aemulus Holdings Berhad was incorporated under the Act as a public limited company in Malaysia
on October 17, 2014 and under current name as the listing vehicle for implementing Listing. This
company enters SSA with Vendors to get 100% equity interest in ACSB. Yeoh Chee Beng and Sang
Ng Kong are the co–founders who have played an important role in the existence of this company.
ASB incorporation on July 30, 2014 is the starting point of the history of this company's business.
Incorporation is conducted by the founders themselves who initially was the engineers for many
multinational electronics company based in the United States. Founders found bigger alternatives in
the future of the company. The chance for import substitution in domestic has been taken to replace
imports in the country at that time. Founders develop architecture testers called 'Avalanche', a
development platform foundation for the ATE and the operations began in 2005 at the first office in
Gurney Tower, Penang, mainly focusing on R & D which is testing the first Avalanche's
architecture. ... Show more content on Helpwriting.net ...
From this development, the company launched the first batch of ATE in the name of Amoeba 1320,
which provided under Amoeba 1000 series in the year of 2006. Amoeba 1320 tester is designed to
test the quality of analog channels with the ability of simple capacity. Aemulus builds a larger office
as the results in the expansion of business. The relocation office is in Krystal Point, Penang. A great
success happened in 2007 when this company successfully develops and launches Amoeba 1340.
The usage of this product is to test wireless for SMU and RF semiconductor devices located in the
mobile phone such as smart phones and cell

Essay on The Three Essential to Materials
A Great Paper.
Knowing Science
To Understand the
Quality of Life
Cody Seaton SCI101 IP 1 Kristina Jantz August 26, 2013
The three essential properties of every material are these:
1. What kind of atom makes up that material? 2. How are the atoms in the material arranged? 3.
How are the atoms in the material bonded together? (Trefil, p. 239)
Atoms make up everything we can see, therefore every material, and atoms have very different
properties within themselves, as well as having different ways of being arranged or of bonding
together, all of which affect the physical and chemical properties ... Show more content on
Helpwriting.net ...
Depending on the material used in the doping, a positive semiconductor (p–type) or a negative
semiconductor (n–type) can be made. These types are charged positively or negatively, and this
property can be used in computers. A semiconductor made up of a sandwiched n–type layer between
two p–type layers forms two p to n interfaces, called p–n junctions, and these junctions allow
semiconductors known as transistors to act like electrical switches. This property is just what
computers needed, and has been the reason behind the amazing leap in technical capabilities we
have seen in the past few decades in computers (Trefil, p. 243–50). These transistors are then made
into extremely complex groupings and systems that number into the hundreds of thousands, within
what is called an integrated circuit. This means that all those various connections making up various
electrical circuits with multitudes of functions are integrated together. The integrated circuit is then
put into a component that can be used in a computer, called a microchip, which houses the
integrated circuit. With the minute size of these devices that has been achieved today, the density of
microchips has shot up, making computers more and more complex, as well as faster by utilizing
some parallel computing with the integrated circuits operating simultaneously. These computing
devices are found inside your car, making problem

Electricity Is A Natural Phenomenon
Electricity is the directional flow of electrons between atoms. Electricity is a natural phenomenon
and is one of the most commonly utilized forms of energy. Electricity is used in order to do work,
such as generating heat and light. Electricity is measured in watts. Watts are the measurement of
power (current * voltage). Current is the flow of electrons measured in amperes (Amps). One
ampere is the amount of current when one coulomb (6.25 x 10^18 electrons) of charge moves past a
point over one second. Voltage is the force that causes electrons to move in a circuit. A volt is
defined as "the electrostatic difference between two points when one joule of energy is used to move
one coulomb of charge from one point to the other." (NDT Resource Center, 2013) A joule is the
measurement of energy that is used when one watt of power does work for one second (also known
as watt–seconds). When measuring electricity in large numbers, the standard unit of measurement is
kilowatt–hour. This determines the rate at which energy is being used, and how energy is quantified
in the United States. One kilowatt hour is equivalent to 3,412.14163 British Thermal Units (BTU's).
One BTU is the amount of energy required to heat one pound of water by 1°F (Princeton, 2013).
The current method of energy generation is from burning fossil fuels to generate electricity.
However, this method is inefficient because most of the energy invested in burning fossil fuels is
converted into heat instead of

Essay On Interdigitated Electrode
field between individual digits of electrodes. Using these simulations, it was observed that gold
nanoparticles bound closely to IDEs can lower the electric field magnitude between the digits of the
electrode. The simulations are also shown to be a useful design tool in optimizing sensor function.
Various different conditions, such as electrode dimensions and background ion concentrations, are
shown to have a significant impact on the simulations.]. From being a simple interface, the
properties of the electrodes used in electrical and electrochemical biosensors can have a remarkable
impact on the function and effectiveness of the resulting biosensor system. The use of interdigitated
electrodes (IDEs) in biosensor systems is one prominent ... Show more content on Helpwriting.net
...
They involve interdigitated fingers (IDT) to increase the edge coupling length. Also called as comb–
drive device. This study involve fabrication of aluminium IDE because of it cost low and common
electrode in biosensor technology. The design of IDEs consist of twin electrode which are arranged
in a comb like finger structure between twin electrodes to form gap distance between electrodes as
shown in figure 2. Technically, the IDEs structure is easy to fabricate, simple operation, ultra–
sensitive and low cost is main point to develop of sensor for clinical application. In other word,
IDEs sensor is expected to provide are better performance and ultrahigh sensitive and selective of
biosensor detection in smaller gap sizes3.Literature review In multiple applications the interdigitated
electrodes thin film are a useful tool for enhancing the analytical parameters and taking advantages
of their inherent properties such as low cost & disposables, reusable, high fabrication resolution,
high sensitivity, low reagent consumption as well as non–tedious pre–cleaning procedures Figure 3
shows the design structure of an IDE. There are two sets of electrodes are placed in the same plane
to the substrate. Generally, it is referred to comb–drive device because it is shaped like tooth of
combs. Figure 3: Geometric parameters of IDE structureIn this work, a sensor to evaluate
sterilization processes with hydrogen peroxide vapor has been characterized. Experimental,
analytical and

Statement Of Purpose For A Robot
STATEMENT OF PURPOSE
"Motion Engaged", as it displayed, the robot turned around and moved towards the fourteen year
old, whose fathomless curiosity waited for answers to a thousand questions regarding the mysterious
object. Just one thought kept coming back to me – which one of them was a miracle, the
components that made the robot alive, or the man who knew exactly what to do with them. Both, I
finally concluded. If god has blessed us with semiconductors, it is man, who in his conquest for
progress has discovered in these materials the means of putting his dreams to shape.
My interest in VLSI is deep rooted. Even before I began studying it as a "Science" I remember
reading about the gadgets in magazines. From the invention of the first silicon transistor to the
microchip invented by Texas Instruments, from the first vacuum tubes and integrated circuits, to the
Intel microprocessor and the present day C.P.U. – every event has been a milestone which I have not
only read about but also savoured for how it has ... Show more content on Helpwriting.net ...
It was the time to water the seeds of VLSI that were sown earlier. In 2010, I completed my
schooling from Ahlcon International School, Delhi. This marked the culmination of a 12–year
period of brilliant schooling and I must admit that much of what I have gone on to do and achieve is
the result of those years. In August 2011, I enrolled for a 4–year Bachelor's Program at Jaypee
Institute of Information Technology, Noida and opted for Electronics and Communication as my
Major. I have spent the past few years in an atmosphere of proactive and vibrant academics. Amidst
students drawn from every corner of India and a faculty of highly qualified and widely travelled
mentors, I have flowered. I remember my teacher, Professor Satyendra Kumar, walk into the first
class of Basic Electronic Devices and Circuits and write on the board "The Next Big Thing Is Really
Small." And I knew I was in the right

A Study On Observation Of Photoluminiscene
A study on observation of photoluminiscene in Ruthenium–based dye (cis–diisothiocyanato–
bis(2,2'–bipyridil–4,4'–dicarboxylic acid)ruthenium (II))
Adlina Izny binti Ahmad
Advanced Material Laboratory
Faculty of Industrial Sciences & Technology, Universiti Malaysia Pahang
Kuantan, Malaysia
Abstract
Photoluminescence is light emission that form after the absorption of photons. Dye act as a light
absorber. Organic dye is one type of dye, have a small band gap and use as semiconducting material.
It will excite the excited electron after absorb light as energy from highest occupied molecular
orbital(HOMO) to lowest unoccupied molecular orbital(LUMO). The energy of photon must be
greater than energy of band gap in order to excite electron. ... Show more content on Helpwriting.net
...
Dye always acts as a light absorber. Dye will absorb light to excite the excited electron state from
HOMO to LUMO. So absorbed of photons will be happened and dye will fall back from LUMO to
HOMO. So emission of photon will be happened. So the wavelength during absorbance and
emission process can be identified by using Photoluminescene (PL) spectrometer. By knowing the
wavelength we can determine the concentration of dye. Ruthenium dye is one of the organic dye
where it contains small band gap, so it only needs small energy to excite the photon from LUMO to
HOMO. So if the dye absorb red colour it will reflect blue colour (refer figure 1). Figure 1: a wheel
of colour to estimate absorbed light based on colour of dye
Objectives
1. To speculate range of absorbed and reflected wavelength of light by Ruthenium–based dye based
on its colour
2. To characterize photoluminescence property of the dye using Photoluminescence(PL)
spectrometer; usng radiation source which energy is based on the speculated absorbed wavelength
3. To estimate energy loss via radiative recombination i.e., recombination of electron with hole in
the lowest unoccupied molecular orbital (LUMO) of dye.
Materials and instruments
PL spectrometer, gloves, 1000µL micropipette, deionized water, ethanol, 1 PL quarts cuvette, and
cis–diisothiocyanato–bis(2,2'–bipyridyl–4,4'–dicarboxylic acid)ruthenium(II) dye (Solaronix) Figure
2:

Ltcc Based High Voltage 3 D Power Module
LTCC Interposer Based High Voltage 3–D Power Module
Atanu Dutta, Simon Ang, and Zhong Chen
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA
Abstract–In this paper, a low temperature co–fired ceramic (LTCC) interposer based high voltage
(13 kV) half–bridge power module is proposed. The proposed power module utilized multi–layer
LTCC interposers to perform 3–D stack, which provides series connection between devices to
achieve high voltage rating of the power module. The proposed 3–D stack can be implemented
through wafer–level packaging using silicon (Si) and silicon carbide (SiC) devices where paralleling
of multiple devices is required to achieve high current. In the proposed high voltage package design,
through–hole vias are implemented to form electrical connections between multi–layer self–aligned
LTCC interposers. The LTCC interposers also provide excellent high voltage breakdown insulation
for the proposed package design. The package exhibits lower parasitic inductance compared to the
traditional wire–bonded counterpart. In this paper, the feasibility of the proposed power module
design was simulated.
Index Terms–High voltage power module, wafer–level packaging, 3–D power module, wire
bondless power module
I. INTRODUCTION
High power modules require multiple power semiconductor devices to be connected in series and
parallel to achieve both high voltage and current rating. There are several challenges associated with
packaging of

Essay On Spin Field Effect Transistor
Spin is one of the most intriguing quantum properties carried by elementary particles. Incorporation
of electron spin into the operation of semiconductor devices enables novel functionalities and
increased performance for information processing and metrology. (–– removed HTML ––) (––
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promising spin–based semiconductor devices is the spin field effect transistor (spinFET), (––
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considered a future candidate for high performance digital computing and memory with ultralow
energy needs. (–– removed HTML ––) (–– removed HTML ––) 4 (–– removed HTML ––) (––
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(–– removed HTML ––) (–– removed HTML ––) 9 (–– removed HTML ––) (–– removed HTML
––) Recognizing spin dephasing in a 2D channel as a limiting factor for a spinFET, it was proposed
in Ref. (–– removed HTML ––) 10 (–– removed HTML ––) to eliminate dephasing by tuning the
Rashba and Dresselhaus couplings such that the effects of spin orbit coupling are effectively
canceled. The model becomes then analytically solvable and there is no dephasing. Although the
tuning of Rashba and Dresselhaus coupling has been demonstrated experimentally, (–– removed
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experiments involved complex structures of multiple quantum wells, not compatible with typical
III–V 2D channel FETs, for which the Rashba effect is generally recognized as dominant over the
Dresselhaus coupling. (–– removed HTML ––) (–– removed HTML ––) 5 (–– removed HTML ––)
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effect transistor (FET) as an example of a realistic device, the structure of which is shown in Fig.
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The Chemical And Gas Sensors
Introduction:
There has been a rapid growth in the field of biosensing through both ultrasensitive chemical and
gas sensors. The bio–sensing protocols that are able to detect specific biological and chemical
species, sensitively and specifically (selectively) can noticeably influence our daily lives. The issues
related to monitoring of industrial emissions, medical diagnosis and public security are significant
application fields of gas sensing in particular. Nano–engineered materials including Carbon
Nanotubes and Graphene are being used to develop miniaturized sensors that can detect very low
concentrations of gases which are biomarkers of certain diseases like lung cancer in particular. The
composition of exhaled breath contains valuable information about certain volatile and semi–
volatile compounds which can be used to generate a chemical "fingerprint" and thereby screen
patients with lung cancer. Graphene and Carbon Nanotubes have been discussed for the
development of chemical sensing platform.
A. Graphene for biosensing:
Graphene is a 2–D form of carbon with planar structure and sp2 bonding. It is a single layer of
graphite with inter–planar spacings of 3.35 A0. It has attracted tremendous interest due to its
exceptional and unique properties. Some of its properties that are relevant to its widespread use in
gas sensors have been discussed below.
Properties:
1. The high specific surface area of graphene (both suspended and supported on substrate) provide
increased

Photolithography Essay
Following exposure, a developer solution is utilized to remove regions that have (positive resist) or
have not (negative resist) been exposed, leaving the desired pattern on the sample. At this point, it is
possible to deposit a patterned layer of new material on top of the sample, or to etch away exposed
regions of the sample. Both cases are followed by removal of remaining resist, usually through use
of 1–Methyl–2–pyrrolidone (NMP) solvent. Typically, a sample will undergo multiple cycles of
photolithographic processing, complex integrated circuits typically require samples to undergo
photolithographic processing up to 50 times throughout the duration of the entire fabrication
process. Without photolithographic processing, fabrication ... Show more content on Helpwriting.net
...
Micromolding in capillaries (MIMIC) and template–assisted spin–coating are two such methods.
Micromolding in capillaries is capable of producing line or stripe–like patterns in perovskite
films.43 When solvated precursors are applied to a substrate with a capillary containing mold on
top, the solutions wick through the mold under the influence of capillary action. Upon removal of
solvent(s) and mold, the resulting perovskite film will retain the straight–line pattern design of the
mold. This process results in comb–like features, with regions of patterned perovskite stripes,
separated by void areas where no perovskite is present. Stripes are connected to each other by a
section of uniform perovskite film, where no mold was present during film growth. A relatively
straight–forward method for patterning perovskites, MIMIC is largely limited to simple line
geometries. Template–assisted spin coating is a similarly easy patterning technique, and, as such,
has limitations in the associated geometries which it can produce. A recent effort shows the ability to
create an inverse–opal (IO) structure in perovskite films through template–assisted spin coating.44
In this procedure, a monolayer of polystyrene microspheres was placed on top of the substrate
during spin–coating of precursor solutions. Following perovskite film growth, the polystyrene

Thesis Statement On Graphene
When I was child, there was a Television program called, MacGyver was telecast every Wednesday
in a week which I enjoyed most. How the MacGyver works to solve serious problem with everyday
items was very much intriguing to me. Since then I have been always trying to solve things, no
matter it is beyond me or not. My father told me that learn mathematics properly if you want to be
like MacGyver. I guess that was the unintentionally foundation for me to be an engineer.
I was very much fascinated to science since my childhood and still now, which actually played a
vital role to be an engineer as an engineer knows better how to relate theoretical mathematics with
practical field. Mathematics is more like magic to me which doesn't need to adopt ... Show more
My undergraduate thesis topic was "Analysis the transport properties of graphene using Ensemble
Monte Carlo Simulation" in which I studied electrical conductivity, effect of temperature on
graphene by varying temperature, effect of electric field on drift velocity, effect of scattering on
mobility, observed its some mechanical properties like stress enduring capability etc. in a form of
carbon nanotube. The most amazing fact about graphene is it may be a metal or a semiconductor or
a semi–metal depending its indexes. Carbon nanotube is actually cylindrical form of graphene sheet.
By using tight binding model(TB), I got electronic band structure of graphene which was the basis
for the Monte Carlo Simulation as it is superior then Boltzmann transport equation(BTE) for
analyzing band structure. I have decent command on MathLab programming language. I acquired
A+ grade in my thesis and not only in the thesis but also I got good grade in all semiconductor
related subjects in my undergraduate level. Nowadays research programs related to graphene has
been a sign of advancement for any institution whether it is educational or

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