SPICE MODEL of TPC8114 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPC8114 (Standard+BDS Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: TPC8114
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
Circuit Configuration
TPC8114
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
4. Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-2.50 -2.00 -1.95 -2.50
-10.00 -2.20 -2.14 -2.73
-25.00 -2.40 -2.37 -1.25
-45.00 -2.60 -2.58 -0.77
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
6. Id-Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
Simulation Result
ID=-9, VGS=-10V Measurement Simulation Error (%)
R DS (on) 3.1 m 3.1 m 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
10. Output Characteristic
Circuit Simulation result
-3V
-2.6V
-2.4V
-2.2V
VGS=-2.0V
Evaluation circuit
V3
U7
0V dc
TP C8 114
V2
-5V dc
V1
-10
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
11. Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
D8114
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
15. Reverse Recovery Characteristic Reference
Trj=22(ns)
Trb=250(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
16. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
R1
0.01m
V1 DZ8114
0Vdc U2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005