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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J321
MANUFACTURER: TOSHIBA




                    Bee Technologies Inc.

       All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                      1
SPICE MODEL
Circuit Configuration

            Collector




     Gate




            Emitter




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                     2
Transfer Characteristics

Circuit Simulation result

               30A



               25A



               20A



               15A



               10A



                5A



                0A
                     0V              4V        8V              12V    16V            20V
                          I(U1:C)
                                                       V_VGE




Evaluation circuit




                                                        D1
                                                        DGT15J321
                                                                      VCE
                                                                      5Vdc

                                    VGE     U1
                                    15Vdc   GT15J321



                                                0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           3
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                              Measurement             Simulation
                         1                6.700                 6.769              1.02
                         2                6.900                 6.969              1.01
                         5                7.280                 7.380              1.37
                        10                7.800                 7.863              0.81
                        15                8.200                 8.248              0.58
                        20                8.550                 8.582              0.38
                        25                8.800                 8.885              0.96
                        30                9.050                 9.165              1.27




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                          4
Fall Time Characteristics

Circuit Simulation result

                  20V




                 SEL>>
                    0V
                         V(U1:G)
                  20A




                   0A


                     9.4us      9.8us                     10.2us                    10.6us     11.0us   11.4us
                         I(U1:C)
                                                                         Time



Evaluation circuit


                                                                        D3
                                                  RG2                   DGT15J321


                                               -VGE
                                               15Vdc43   U2               L1
                                                         GT15J321       20mH
                                                                    2               1
                                                                        IC = 15
                                                                                               VCE
                                                                                               300



                                                                        D2
                                                 Rg                     DGT15J321
                            V1 = 0
                            V2 = 15
                            TD = 5u       V1     43
                            TR = 10n                     U1
                            TF = 10n                     GT15J321
                            PW = 4.998u
                            PER = 100u

                                                               0




Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω)


       Parameter         Unit             Measurement                                   Simulation        %Error
            tf            us                                 0.030                             0.030             -1.417
           toff           us                                 0.340                             0.343             0.845



                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                          5
Gate Charge Characteristics

Circuit Simulation result

                20V




                16V




                12V




                 8V




                 4V




                 0V
                      0               20n        40n              60n                  80n       100n
                          V(W1:1)
                                                       Time*1mA




Evaluation circuit


                                                                      V2



                                                                      0
                                                                                                 IC
                                                                           D1           D2
                                                                           DGT15J321    Dbreak   15

                 I1 = 0
                 I2 = 1m                    W1   W
                 TF = 10n                    +   IOFF = 100uA                                    VCC
                 TR = 10n                        ION = 0A         U1
                 TD = 0          I2          -                    GT15J321                       300
                 PER = 700m
                 PW = 7m
                                                                  0




Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V)


       Parameter           Unit        Measurement                 Simulation                     %Error
           Qge              nc                   20.000                           20.000                0.000
           Qgc              nc                   30.000                           30.000                0.000
           Qg               nc                   85.000                           88.076                3.619

                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                6
Saturation Characteristics

Circuit Simulation result

                50A



                40A



                30A



                20A



                10A



                 0A
                      0V            1.0V     2.0V             3.0V    4.0V      5.0V
                           I(IC)
                                                    V(IC:-)



Evaluation circuit




                                                          D1
                                                          DGT15J321
                                                                      IC
                                                                      0Adc
                                     VGE       U1
                            15Vdc              GT15J321




                                                     0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                       7
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)


                                             VCE (V)
               Ic(A)                                                        %Error
                              Measurement             Simulation
                         1                0.915                 0.956              4.51
                         2                1.050                 1.060              0.96
                         5                1.330                 1.314              -1.23
                        10                1.650                 1.648              -0.13
                        15                1.900                 1.916              0.85
                        20                2.150                 2.148              -0.09
                        25                2.380                 2.369              -0.45
                        30                2.600                 2.605              0.19




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           8
Output Characteristics

Circuit Simulation result

                 30A

                                                    20V       15V                    9V



                 20A




                                                                                     8V
                 10A



                                                                                 VGE=7V

                     0A
                          0V             1.0V     2.0V             3.0V   4.0V      5.0V
                               I(R1)
                                                           V_VCE




Evaluation circuit

                                                                   R1

                                                              0.001m



                                                            D1
                                                            DGT15J321     VCE
                                                                          5Vdc


                                   VGE          U1
                                   0            GT15J321




                                                    0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           9
FWD Forward Current Characteristics

Circuit Simulation result

                     30A




                     25A




                     20A




                     15A




                     10A




                      5A




                      0A
                           0V               0.4V            0.8V           1.2V        1.6V   2.0V
                                I(Vsense)
                                                                   V(EC)




Evaluation circuit

                                                   Vsense
                                                                                  V1
                                     EC
                                                   0Vdc

                                                                     D1            0Vdc
                                                              DGT15J321
                                     V2                                           U1
                                                                                  GT15J321




                                                              0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                     10
Comparison Graph

Simulation result




Comparison table


                                              VF (V)
               IF(A)                                                        %Error
                              Measurement              Simulation
                         1                1.090                 1.093              0.23
                         2                1.170                 1.162              -0.71
                         5                1.260                 1.269              0.73
                        10                1.375                 1.377              0.11
                        15                1.460                 1.459              -0.08
                        20                1.538                 1.531              -0.46
                        25                1.600                 1.598              -0.15
                        30                1.655                 1.661              0.34




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                           11
Reverse Recovery Characteristics

Circuit Simulation result

                  15A




                   0A




                  -5A
                   5.04us      5.12us                         5.20us                        5.28us             5.36us   5.44us
                        I(FWD)
                                                                             Time



Evaluation circuit

                                                                                                 L2
                                                                                             1           2
                                                                                                 2.9uH
                                                                            D2
                                                        R1                  DGT15J321

                                                         43
                                                     -VGE
                                                     15       U2
                                                              GT15J321

                                                                              L1
                                                                            20mH
                                                                    FWD 2               1
                                                                            IC = 15
                                                                    C                                         VCE
                                                                                                              300



                                                                            D1
                                                         Rg                 DGT15J321
                                  V1 = 0
                                  V2 = 15
                                  TD = 5u       V1       43
                                  TR = 10n                    U1
                                  TF = 10n                    GT15J321
                                  PW = 4.998u
                                  PER = 100u


                                                                    0




Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec

       Parameter           Unit          Measurement                                             Simulation               %Error
            trr             ns                                110.000                                        117.335             6.668
            Irr              A                                    4.200                                         4.226            0.607



                        All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
                                                                                                                                         12

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SPICE MODEL of GT15J321 (Professional+FWDS PSpice Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT15J321 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1
  • 2. SPICE MODEL Circuit Configuration Collector Gate Emitter All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2
  • 3. Transfer Characteristics Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit D1 DGT15J321 VCE 5Vdc VGE U1 15Vdc GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3
  • 4. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 1 6.700 6.769 1.02 2 6.900 6.969 1.01 5 7.280 7.380 1.37 10 7.800 7.863 0.81 15 8.200 8.248 0.58 20 8.550 8.582 0.38 25 8.800 8.885 0.96 30 9.050 9.165 1.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4
  • 5. Fall Time Characteristics Circuit Simulation result 20V SEL>> 0V V(U1:G) 20A 0A 9.4us 9.8us 10.2us 10.6us 11.0us 11.4us I(U1:C) Time Evaluation circuit D3 RG2 DGT15J321 -VGE 15Vdc43 U2 L1 GT15J321 20mH 2 1 IC = 15 VCE 300 D2 Rg DGT15J321 V1 = 0 V2 = 15 TD = 5u V1 43 TR = 10n U1 TF = 10n GT15J321 PW = 4.998u PER = 100u 0 Test condition: IC=15 (A), VCC=300 (V), VGE= 15 (V), RG=43(Ω) Parameter Unit Measurement Simulation %Error tf us 0.030 0.030 -1.417 toff us 0.340 0.343 0.845 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5
  • 6. Gate Charge Characteristics Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D1 D2 DGT15J321 Dbreak 15 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA VCC TR = 10n ION = 0A U1 TD = 0 I2 - GT15J321 300 PER = 700m PW = 7m 0 Test condition: VCC=300 (V), IC=15 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 20.000 20.000 0.000 Qgc nc 30.000 30.000 0.000 Qg nc 85.000 88.076 3.619 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6
  • 7. Saturation Characteristics Circuit Simulation result 50A 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit D1 DGT15J321 IC 0Adc VGE U1 15Vdc GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7
  • 8. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 0.915 0.956 4.51 2 1.050 1.060 0.96 5 1.330 1.314 -1.23 10 1.650 1.648 -0.13 15 1.900 1.916 0.85 20 2.150 2.148 -0.09 25 2.380 2.369 -0.45 30 2.600 2.605 0.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8
  • 9. Output Characteristics Circuit Simulation result 30A 20V 15V 9V 20A 8V 10A VGE=7V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m D1 DGT15J321 VCE 5Vdc VGE U1 0 GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9
  • 10. FWD Forward Current Characteristics Circuit Simulation result 30A 25A 20A 15A 10A 5A 0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc D1 0Vdc DGT15J321 V2 U1 GT15J321 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10
  • 11. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.090 1.093 0.23 2 1.170 1.162 -0.71 5 1.260 1.269 0.73 10 1.375 1.377 0.11 15 1.460 1.459 -0.08 20 1.538 1.531 -0.46 25 1.600 1.598 -0.15 30 1.655 1.661 0.34 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11
  • 12. Reverse Recovery Characteristics Circuit Simulation result 15A 0A -5A 5.04us 5.12us 5.20us 5.28us 5.36us 5.44us I(FWD) Time Evaluation circuit L2 1 2 2.9uH D2 R1 DGT15J321 43 -VGE 15 U2 GT15J321 L1 20mH FWD 2 1 IC = 15 C VCE 300 D1 Rg DGT15J321 V1 = 0 V2 = 15 TD = 5u V1 43 TR = 10n U1 TF = 10n GT15J321 PW = 4.998u PER = 100u 0 Test condition: VCC=300 (V), IF=15 (A), –di/dt=100 A/usec Parameter Unit Measurement Simulation %Error trr ns 110.000 117.335 6.668 Irr A 4.200 4.226 0.607 All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12