SPICE MODEL of C4D10120E (Professional Model) in SPICE PARK
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SPICE MODEL of C4D10120E (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of C4D10120E (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: SILICON CARBIDE SCHOTTKY DIODE PART NUMBER: C4D10120E MANUFACTURER: CREE REMARK: PROFESSIONAL MODEL Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 1
- 2. Circuit Configuration U2 C4D10120E DIODE MODEL PARAMETERS PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 2
- 3. Forward Current Characteristics Circuit Simulation result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D10120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 3
- 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.2 0.853 0.864 1.29 0.5 0.906 0.905 -0.11 1 0.959 0.952 -0.73 2 1.044 1.029 -1.44 5 1.226 1.229 0.24 10 1.538 1.539 0.07 20 2.148 2.143 -0.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 4
- 5. Reverse Current Characteristic Circuit Simulation result 5.0mA 4.0mA 3.0mA 2.0mA 1.0mA 0A 0V 0.5KV 1.0KV 1.5KV 2.0KV I(R1) V_V1 Evaluation circuit R1 0.01m V1 U1 C4D10120E 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 5
- 6. Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1500 55.900 55.388 -0.92 1550 86.350 89.926 4.14 1600 142.000 146.042 2.85 1650 243.600 237.219 -2.62 1700 377.600 385.148 2.00 1728 516.000 505.293 -2.08 1730 5000.000 5000.000 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 6
- 7. Junction Capacitance Characteristic Circuit Simulation result 800p 700p 600p 500p 400p 300p 200p 100p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(1000V/10u) V(R) Evaluation circuit V2 R 0 U1 V1 = 0 V1 C4D10120E V2 = 1000 TD = 0 TR = 10us TF = 100ns PW = 100us PER = 10m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 7
- 8. Comparison Graph Circuit Simulation result Comparison table C (pF) VR (V) %Error Measurement Simulation 0.1 751.800 753.017 0.16 0.2 721.800 725.047 0.45 0.5 656.250 657.779 0.23 1 577.500 575.619 -0.33 2 484.050 480.455 -0.74 5 353.850 353.966 0.03 10 267.750 267.501 -0.09 20 200.000 198.477 -0.76 50 136.500 132.830 -2.69 100 94.300 96.850 2.70 200 68.150 70.590 3.58 500 47.250 46.390 -1.82 1000 34.750 33.660 -3.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 8