The document provides a detailed device modeling report for the RURD460S diode, including specifications such as saturation current, junction capacitance, and reverse recovery characteristics. It features simulation results comparing measurement data with theoretical expectations across various electrical parameters. The report includes circuit simulation details, characteristics graphs, and performance metrics with associated errors for validation.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: RURD460S
MANUFACTURER: FAIRCHILD
REMARK: TC=110 degree
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
5.0A
1.0A
100mA
10mA
0V 2.0V
I(D1)
V_V1
Evaluation Circuit
R1
0.01m
D1
V1
0Vdc
RURD460S_110s
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.442 0.438 0.905
0.02 0.488 0.490 -0.410
0.05 0.570 0.567 0.526
0.1 0.622 0.623 -0.161
0.2 0.688 0.686 0.291
0.5 0.774 0.773 0.129
1 0.852 0.852 0.000
2 0.956 0.955 0.105
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
1.0V 10V 100V
I(V2)/(600V/1u)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 600 V1
V1 = 0 D1
TD = 0
TR = 1us
TF = 10ns RURD460S_110s
PW = 5us
PER = 50us
0
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7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 94.700 94.712 -0.013
1 53.800 53.702 0.182
2 42.000 42.317 -0.755
5 28.900 29.548 -2.242
10 21.600 21.934 -1.546
20 16.600 16.215 2.319
50 11.400 10.803 5.237
100 8.550 8.111 5.135
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
0A
-200mA
19.9us 20.0us 20.2us 20.3us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.39V V1
V2 = 10.71V D1
TD = 0
TR = 10ns RURD460S_110s
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 135.6 ns 135.67 ns 0.0561
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =33.6 (ns)
Trb= 102 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005