SPICE MODEL of RURD660S , TC=25degree (Standard Model) in SPICE PARK
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SPICE MODEL of RURD660S , TC=25degree (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of RURD660S , TC=25degree (Standard Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD PART NUMBER: RURD660S MANUFACTURER: FAIRCHILD REMARK: TC=25 degree Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 3. Forward Current Characteristic Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 4. Forward Current Characteristic Circuit Simulation Result 5.0A 1.0A 100mA 100mV 1.0V 5.0V I(R1) V_V1 Evaluation Circuit R1 0.01m D1 V1 0Vdc RURD660S_S 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.11 0.584 0.585 -0.171 0.2 0.636 0.637 -0.157 0.5 0.718 0.717 0.139 1 0.796 0.795 0.126 2 0.890 0.892 -0.225 5 1.102 1.102 0.000 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 6. Capacitance Characteristic Circuit Simulation Result 1.0n 100p 10p 1.0p 100mV 1.0V 10V 100V I(V2)/(600V/1u) V(N00016) Evaluation Circuit V2 0Vdc V2 = 600 V1 V1 = 0 D1 TD = 0 TR = 1us TF = 10ns RURD660S_S PW = 5us PER = 10us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 7. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0 110.350 110.350 0.000 0.1 100.140 109.066 -8.914 0.2 92.626 96.425 -4.101 0.5 76.650 77.397 -0.975 1 63.195 64.145 -1.503 2 49.714 51.118 -2.824 5 34.951 36.471 -4.349 10 26.719 28.000 -4.794 20 21.000 21.618 -2.943 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 8. Reverse Recovery Characteristic Circuit Simulation Result 200mA 0A -200mA 19.92us 20.00us 20.08us 20.16us I(R1) Time Evaluation Circuit R1 50 V1 = -9.39 V1 V2 = 10.65V D1 TD = 0 TR = 10ns TF = 10ns RURD660S_S PW = 20us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation %Error trr 64 us 63.85 us 0.234 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
- 9. Reverse Recovery Characteristic Reference Measurement Trj = 21.6 (ns) Trb= 42.4 (ns) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2005