This document summarizes the specifications and simulation results for a D1NL20U general purpose rectifier diode. It includes the diode's component details, PSpice model parameters, and simulation results comparing the diode's forward current, capacitance, and reverse recovery characteristics to measurement data. The simulation results show good agreement with measurements, with most values within 1% error.

1. Device Modeling Report
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ PROFESSIONAL
PART NUMBER: D1NL20U
MANUFACTURER: SHINDENGEN
REMARK: TC=25C
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
100mV 1.0V 5.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc
D1NL20U_p
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) %Error
Measurement Simulation
0.01 0.538 0.537 0.186
0.02 0.575 0.576 -0.174
0.05 0.620 0.619 0.161
0.1 0.655 0.656 -0.153
0.2 0.695 0.694 0.144
0.5 0.761 0.762 -0.131
1 0.835 0.834 0.120
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Capacitance Characteristic
Circuit Simulation Result
100p
10p
1.0p
100mV 1.0V 10V 100V
-I(X_U1.D_D1)/(200V/1u)
V(N00016)
Evaluation Circuit
V2
0Vdc
V2 = 200 V1
V1 = 0 U1
TD = 0
TR = 1us
TF = 10ns D1NL20U_p
PW = 5us
PER = 10us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Comparison Graph
Circuit Simulation Result
Simulation Result
Cj(pF) Cj(pF)
Vrev(V) %Error
Measurement Simulation
0 80.123 80.123 0.000
0.1 74.873 75.131 -0.345
0.2 70.813 70.830 -0.024
0.5 61.405 61.746 -0.555
1 52.473 52.521 -0.091
2 42.600 42.458 0.333
5 30.635 30.433 0.659
10 23.100 22.981 0.515
20 17.150 17.218 -0.397
50 11.448 11.161 2.507
100 8.418 8.581 -1.936
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. Reverse Recovery Characteristic
Circuit Simulation Result
200mA
0A
-200mA
19.96us 20.00us 20.04us 20.08us 20.12us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.39V V1
V2 = 10.7V U1
TD = 0
TR = 10ns
TF = 10ns D1NL20U_p
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj 10.40 ns 10.46 ns 0.576
trb 12.00 ns 11.98 ns 0.166
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. Reverse Recovery Characteristic Reference
Measurement
Trj =10.4 (ns)
Trb= 12.0 (ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005