C2D05120 Silicon Carbide Schottky Diode Device Modeling
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SPICE MODEL of C2D05120 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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C2D05120 Silicon Carbide Schottky Diode Device Modeling
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C2D05120 MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. Circuit Configuration PIN1 CASE PIN2 U1 C2D05120_P PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 C2D05120_P V1 0Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result 20 Measurement 18 Simulation 16 FORWARD CURRENT: IF(A) 14 12 10 8 6 4 2 0 0.0 1.0 2.0 3.0 4.0 5.0 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.5 0.9700 0.9730 0.31 1.0 1.0200 1.0188 -0.12 2.0 1.0950 1.0923 -0.25 4.0 1.2250 1.2215 -0.29 8.0 1.4600 1.4620 0.14 12.0 1.6900 1.6950 0.30 16.0 1.9300 1.9249 -0.26 20.0 2.1600 2.1532 -0.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result 400p 350p 300p 250p 200p 150p 100p 50p 0 1.0V 10V 100V 1.0KV I(V2)/(400V/500n) V(N16614) Evaluation Circuit V2 0Vdc U1 V2 = 400 V1 C2D05120_P V1 = 0 TD = 0 TR = 500ns TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 400 Measurement Simulation 350 300 CAPACITANCE: C(pF) 250 200 150 100 50 0 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 1 342.000 344.146 0.63 2 293.000 293.917 0.31 5 220.000 220.139 0.06 10 167.000 169.037 1.22 20 128.000 126.481 -1.19 50 86.000 84.514 -1.73 100 61.000 61.835 1.37 200 44.000 45.088 2.47 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Characteristic Circuit Simulation Result 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA 20uA 0A 0V 0.5KV 1.0KV 1.5KV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc C2D05120_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Comparison Graph Circuit Simulation Result 200 Measurement 180 Simulation 160 REVERSE CURRENT:IR(uA ) 140 120 100 80 60 40 20 0 0 500 1000 1500 REVERSE VOLTAGE：VR(V) Simulation Result IR(uA) VR(V) Error (%) Measurement Simulation 300 0.0110 0.0114 3.35 500 0.0750 0.0739 -1.47 700 0.3500 0.3524 0.69 900 1.7500 1.7394 -0.61 1000 3.9000 3.8767 -0.60 1100 8.5000 8.5947 1.11 1200 19.0000 19.0540 0.28 1300 41.0000 42.2010 2.93 1400 95.0000 93.5420 -1.53 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010