SPICE MODEL of 2SJ652 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: 2SJ652
MANUFACTURER: SANYO
Body Diode (Professional Model) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
45
Measurement
40
Simulation
35
30
25
gfs(S)
20
15
10
5
0
0.0 10.0 20.0 30.0 40.0 50.0
Drain Current ID (-A)
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1.0000 9.000 9.414 4.60
2.0000 12.500 12.814 2.51
5.0000 18.600 18.856 1.38
10.0000 25.400 24.736 -2.61
20.0000 32.200 31.729 -1.46
50.0000 41.500 42.343 2.03
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3

4. Vgs-Id Characteristic
Circuit Simulation result
-50A
-40A
-30A
-20A
-10A
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
U1
2SJ652 -10
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
1 2.450 2.421 -1.20
2 2.550 2.510 -1.56
5 2.700 2.698 -0.06
10 2.900 2.927 0.92
20 3.250 3.279 0.89
50 4.100 4.079 -0.51
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. Rds(on) Characteristic
Circuit Simulation result
-14A
-13A
-12A
-11A
-10A
-9A
-8A
-7A
-6A
-5A
-4A
-3A
-2A
-1A
0A
0V -100mV -200mV -300mV -400mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1 0Vdc
2SJ652
V1
-10
0
Simulation Result
ID=-14A, VGS=-10V Measurement Simulation Error (%)
R DS (on) mΩ 28.500 28.500 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:4)
Time*1mA
Evaluation circuit
U1
ION = 0uA 2SJ652 I2
I1 = 0 IOFF = 1mA D2 28
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-30
0
Simulation Result
VDD=-30V,ID=-28A
Measurement Simulation Error (%)
,VGS=-10V
Qgs nC 15.000 14.915 -0.57
Qgd nC 12.000 12.078 0.65
Qg nC 80.000 79.840 -0.20
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
0 810.000 810.000 0.000
5 280.000 279.250 -0.268
10 195.000 196.900 0.974
15 160.000 158.800 -0.750
20 135.000 135.900 0.667
25 120.000 120.265 0.221
30 110.000 108.755 -1.132
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(U1:G) V(U1:D)/3
Time
Evaluation circuit
L2 RL
50nH 2.1
R1 L1
U1
PER = 20u 2SJ652 VDD
PW = 10u 30nH -30Vdc
TF = 5n 50 R2
TR = 5n 50
TD = 1u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID=-14A, VDD=-30V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 33.000 32.876 -0.38
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Output Characteristic
Circuit Simulation result
-50A
-4
-10 -6
-40A
-30A
-20A
VGS=-3V
-10A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V -4.5V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
U1
2SJ652
-5
V1
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
70A
10A
1.0A
100mA
10mA
1.0mA
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
V_VDS
Evaluation Circuit
Vsense
0Vdc
VDS U1
2SJ652
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
10.000
Drain reverse current IDR (-A)
1.000
0.100
0.010
0.001
0 0.3 0.6 0.9 1.2 1.5
Source - Drain voltage VSD (-V)
Simulation Result
VSD(-V)
IDR(-A) %Error
Measurement Simulation
0.001 0.5000 0.4973 -0.53
0.01 0.5600 0.5595 -0.08
0.1 0.6200 0.6223 0.38
1 0.6950 0.6913 -0.53
2 0.7200 0.7176 -0.33
5 0.7600 0.7641 0.54
10 0.8150 0.8150 0.00
20 0.8900 0.8882 -0.20
50 1.0500 1.0505 0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.2us 0.6us 1.0us 1.4us 1.8us 2.2us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.6v U1
TD = 90ns D2SJ652_P
TR = 10ns
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 28.000 27.853 -0.52
trb ns 72.000 72.138 0.19
trr ns 100.000 99.991 -0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj=28.00(ns)
Trb=72.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
U1
2SJ652
0Vdc
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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