This document provides a device modeling report that includes: 1) SPICE models for the power MOSFET and its body diode, including parameters, simulation results and comparisons to measurements for key characteristics like transconductance, Vgs-Id, Rds(on), gate charge, capacitance and switching/recovery times. 2) SPICE models for the ESD protection diode, including simulation results for zener voltage characteristic. 3) References and examples for some diode parameters.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: SSM3J108TU
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

3. Transconductance Characteristic
Circuit Simulation Result
100.00
Measurement
Simulation
10.00
gfs
1.00
0.10
0.01
0.0 0.2 0.4 0.6 0.8 1.0
- ID : Drain Curre nt A
Comparison table
gfs
-Id(A) Error(%)
Measurement Simulation
0.001 0.048 0.050 4.167
0.002 0.097 0.100 3.093
0.005 0.164 0.167 1.829
0.010 0.246 0.250 1.626
0.020 0.328 0.333 1.524
0.050 0.620 0.625 0.806
0.100 0.902 0.909 0.776
0.200 1.241 1.250 0.725
0.500 1.776 1.786 0.563
1.000 2.483 2.500 0.685
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

4. Vgs-Id Characteristic
Circuit Simulation result
-10A
-1.0mA
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V -1.4V -1.6V -1.8V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
SSM3J108TU
V2
-3
V1
-1.2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

5. Comparison Graph
Circuit Simulation Result
10.00
Measurement
Simulation
1.00
- ID : Drain Current A
0.10
0.01
0.0 1.0 2.0
- VGS : Gate to Source Voltage V
Simulation Result
-VGS(V)
-ID(A) Error (%)
Measurement Simulation
0.001 0.820 0.843 2.805
0.002 0.834 0.853 2.278
0.005 0.850 0.873 2.706
0.010 0.900 0.895 -0.556
0.020 0.930 0.925 -0.538
0.050 1.000 0.988 -1.200
0.100 1.060 1.057 -0.283
0.200 1.150 1.155 0.435
0.500 1.340 1.350 0.746
1.000 1.530 1.571 2.680
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

6. Rds(on) Characteristic
Circuit Simulation result
-1.0A
-0.5A
0A
0V -50mV -100mV -150mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
SSM3J108TU VDS
0Vdc
V1
-4
0
Simulation Result
ID=-0.8A, VGS=-4V Measurement Simulation Error (%)
R DS (on) (m) 125.000 124.967 -0.026
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

7. Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 -1n -2n -3n -4n -5n -6n -7n -8n -9n -10n
V(W1:4)
Time*-1mA
Evaluation circuit
U1
SSM3J108TU
ION = 0uA
IOFF = 1mA
W
-
+ I2
D2 1.5
I1 = 0 W1 Dbreak
I1
I2 = 1m
TD = 0 V1
TR = 10n
TF = 10n
PW = 600u -15
PER = 1000u
0
Simulation Result
VDD=-15V,ID=-1.5A
Measurement Simulation Error (%)
,VGS=-10V
Qgs(nc) 0.800 0.802 0.250
Qgd(nc) 0.800 0.803 0.375
Qg(nc) 9.000 8.690 -3.444
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.000 17.600 17.598 -0.011
2.000 15.200 15.202 0.013
5.000 12.200 12.211 0.090
10.000 10.200 10.203 0.029
20.000 8.500 8.516 0.188
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

9. Switching Time Characteristic
Circuit Simulation result
-20V
-15V
-10V
-5V
0V
1.80us 1.88us 1.96us 2.04us 2.12us 2.20us
V(L1:2)*4 V(R2:2)
Time
Evaluation circuit
L2 R2
50nH 40
U1
SSM3J108TU
L1
V1
PER = 200u -10Vdc
PW = 10u 30nH
TF = 1n
TR = 1n R1
TD = 2u
V2 = 2.5 V2 4.7
V1 = 0
0
Simulation Result
ID=-0.25A, VDD=-10V
Measurement Simulation Error(%)
VGS=-2.5V
Ton(ns) 12.000 12.038 0.317
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

10. Output Characteristic
Circuit Simulation result
-5.0A
-4.0A
-2.5V
-3.0A
-2.0A
-1.8V
-1.0A
-1.5V
VGS=-1.2V
0A
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
SSM3J108TU
V2
-1
V1
-1.2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(VD_Sense)
V_VDS
Evaluation Circuit
VD_Sense
0Vdc
U1
VDS SSM3J108TU
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

12. Comparison Graph
Circuit Simulation Result
1.00
Measurement
Simulation
Drain reverse current IDR(A)
0.10
0.01
0.00
0 0.2 0.4 0.6 0.8 1
Drain : Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
0.001 0.425 0.420 -1.176
0.002 0.440 0.441 0.227
0.005 0.465 0.469 0.860
0.010 0.490 0.493 0.612
0.020 0.525 0.520 -0.952
0.050 0.565 0.565 0.000
0.100 0.600 0.605 0.833
0.200 0.650 0.651 0.154
0.500 0.730 0.724 -0.822
1.000 0.795 0.799 0.503
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
I(R1)
Time
Evaluation Circuit
R1
50 U1
SSM3J108TU
V1 = -9.5v V1
V2 = 10.6v
TD = 12n
TR = 5ns
TF = 5ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trr(ns) 13.000 12.980 -0.154
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

14. Reverse Recovery Characteristic Reference
Trj=4.2(ns)
Trb=8.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
0uA
2uA
4uA
6uA
8uA
10uA
20V 18V 16V 14V 12V 10V 8V 6V 4V 2V 0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc SSM3J108TU
R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008