The document is a device modeling report for the XBS104S13R-G Schottky rectifier from Torex Semiconductor, detailing its PSPICE model parameters, forward current characteristics, capacitance, and reverse recovery characteristics. It includes simulation results and comparative graphs highlighting the performance metrics such as forward current, inter-terminal capacitance, and reverse current with respective measurements and simulation errors. Copyrighted by Bee Technologies Inc., the report provides essential data for evaluating the component's electronic behavior.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS104S13R-G
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 200mV 400mV 600mV 800mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S13R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
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Measurement
Simulation
Forward Current:IF (A)
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.001 0.210 0.210 0.166
0.002 0.230 0.228 -0.786
0.005 0.253 0.252 -0.342
0.01 0.270 0.271 0.291
0.02 0.290 0.290 -0.033
0.05 0.315 0.317 0.478
0.1 0.340 0.340 0.004
0.2 0.370 0.368 -0.476
0.5 0.420 0.421 0.198
1 0.480 0.480 -0.037
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
200p
150p
100p
50p
0
0V 10V 20V 30V 40V
I(V2)/(40V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 40 V1 U1
V1 = 0 XBS104S13R-G_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
200
Measurement
Inter-Terminal Capacity:Ct (pF)
Simulation
150
100
50
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
0 130.500 124.446 -4.64
1 80.000 80.838 1.05
5 44.000 44.561 1.28
10 34.000 33.284 -2.11
15 28.000 27.925 -0.27
20 25.000 24.614 -1.54
25 22.000 22.335 1.52
30 21.000 20.589 -1.96
35 19.000 19.232 1.22
40 18.000 18.169 0.94
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.27V
V1 = -0.78V
TD = 0ns V1 U1
TR = 1ns XBS104S13R-G_P
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 25.000 24.900 -0.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
100uA
10uA
1.0uA
100nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S13R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Reverse Current:IR (uA)
10.000
1.000
0.100
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1 0.4700 0.4565 -2.86
5 0.7100 0.7272 2.42
10 0.9200 0.9583 4.17
15 1.2000 1.1458 -4.52
20 1.4400 1.3714 -4.76
25 1.8000 1.7167 -4.63
30 2.3000 2.2620 -1.65
35 3.0500 3.0894 1.29
40 4.4000 4.2796 -2.74
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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