This document presents a device modeling report for the TPCC8105 MOSFET by Bee Technologies Inc., detailing model parameters, simulation results, and measurement comparisons. It includes various electrical characteristics such as transconductance, gate-source voltage characteristics, and capacitance characteristics as well as performance evaluations under different conditions. The document concludes with analysis of switching times and reverse recovery characteristics, providing insights into the accuracy of simulations against empirical data.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCC8105
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
3
0
20
40
60
80
100
120
0 10 20 30 40 50 60
gfs(S)
Drain current -ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation result
Comparison table
-ID (A)
gfs (S)
%Error
Measurement Simulation
5 33.000 32.360 -1.94
10 45.000 44.913 -0.19
20 61.600 61.878 0.45
40 83.000 84.321 1.59
60 98.000 100.373 2.42
VDS=-10V

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V_VGS
0V -1.0V -2.0V -3.0V -4.0V
-I(Vsense)
0A
20A
40A
60A
VGS
VDS
-10VU1
TPCC8105
Vsense
0
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
5
0
20
40
60
0.0 1.0 2.0 3.0 4.0
Draincurrent-ID(A)
Gate-source voltage -VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
-ID (A)
-VGS (V)
%Error
Measurement Simulation
2 1.650 1.664 0.87
5 1.750 1.777 1.55
10 1.880 1.906 1.40
20 2.060 2.094 1.65
40 2.400 2.366 -1.42
60 2.700 2.582 -4.37
VDS=-10V

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
6
VGS
-10V
0
VDS
U1
TPCC8105
Vsense
V_VDS
0V -10mV -20mV -30mV -40mV -50mV -60mV
-I(Vsense)
0A
2A
4A
6A
8A
10A
12A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=-10(V), ID=-11.5(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 6.000 6.002 0.03

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V_VDS
0V -0.4V -0.8V -1.2V -1.6V -2.0V
-I(Vsense)
0A
10A
20A
30A
40A
50A
VGS
VDS
U1
TPCC8105
Vsense
0
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=-2V
-2.2
-2.4
-2.6
-3
-3.5
-4.5
-6
-10

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Capacitance Characteristics
Simulation result
Comparison table
VSD (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 235.000 238.000 1.28
0.2 230.000 224.000 -2.61
0.5 208.000 204.000 -1.92
1 180.000 179.600 -0.22
2 145.000 146.160 0.80
5 97.000 101.000 4.12
10 70.000 72.000 2.86
30 41.000 39.000 -4.88
Simulation
Measurement

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Time*1mA
0 20n 40n 60n 80n 100n 120n
V(U1:4)
0V
-5V
-10V
-15V
-20V
-25V
-30V
0
D1
DMod
U1
TPCC8105
-
+
W1
ION = 0
IOFF = 1mA
IG
TD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
ID
23A
VDD
-24V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-24(V), VGS=-10(V), ID=-23(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 7.600 7.604 0.05
Qgd nC 20.000 20.000 0.00
Qg nC 76.000 52.591 -30.80

10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(G) V(D)/1.5
0V
-2.5V
-5.0V
-7.5V
-10.0V
-12.5V
-15.0V
U1
TPCC8105
D
0
V1TD = 2u
TF = 10n
PW = 10u
PER = 1m
V1 = 0
TR = 10n
V2 = -20
VDD
-15V
RL
1.3
L2
50nH
12
L1
30nH
1 2
R2
4.7
G
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=-15(V), VGS=-10(V), ID=-11.5(A), RG=4.7
Parameter Unit Measurement Simulation %Error
ton ns 14.000 14.048 0.34

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11
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V
-I(VDS)
100mA
1.0A
10A
100A
VDS
0
U1
TPCC8105
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
12
0
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0
Drianreversecurrent-IDR(A)
Drain - source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Simulation result
Comparison table
-IDR (A)
VDS (V)
%Error
Measurement Simulation
0.1 0.615 0.610 -0.81
0.2 0.630 0.631 0.16
0.5 0.660 0.661 0.15
1 0.680 0.684 0.59
2 0.709 0.710 0.14
5 0.750 0.753 0.40
10 0.800 0.798 -0.25
20 0.875 0.867 -0.91
40 0.980 0.983 0.31

13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
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Time
9.7us 9.9us 10.1us 10.3us 10.5us 10.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 88ns
TF = 10ns
PW = 10us
PER = 1ms
V1 = -9.4V
TR = 10ns
V2 = 10.6V
R1
50
U1
TPCC8105
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 12.000 11.670 -2.75

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Reverse Recovery Characteristics Reference
Trj = 12(ns)
Trb = 88(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement