This document is a device modeling report for the TPCA8058-H MOSFET manufactured by Toshiba, detailing various model parameters and characteristics such as transconductance, gate charge, and capacitance. It compares simulation results with measurements, reporting discrepancies in a series of tables and graphs. Key evaluations include on-resistance, switching times, and forward current characteristics, all noting specific error percentages between simulated and measured values.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCA8058-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
5 42.000 43.295 3.08
10 62.000 61.814 -0.30
20 90.000 88.547 -1.61
50 146.000 143.567 -1.67
VDS=10V

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V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
14A
28A
42A
56A
70A
VGS
0
VDS
10V
U1
TPCA8058-H
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 2.340 2.344 0.17
2 2.420 2.387 -1.36
5 2.530 2.472 -2.29
10 2.640 2.567 -2.77
20 2.760 2.700 -2.17
42 2.930 2.901 -0.99
70 3.120 3.086 -1.09
VDS=10V

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VGS
10V
0
VDS
U1
TPCA8058-H
V_VDS
0V 10mV 20mV 30mV 40mV 50mV
-I(VDS)
0A
4A
8A
12A
16A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=19(A), VGS =10(V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 2.3 2.302 0.09

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Time*1m
0s 12ns 24ns 36ns 48ns 60ns
V(W1:3)
0V
4V
8V
12V
0
D1
DMod
-
+
W1
ION = 0
IOFF = 1mA
W
IGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
ID
38A
VDD
24V
U1
TPCA8058-H
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=24(V), ID=38(A), VGS=10(V)
Parameter Unit Measurement Simulation %Error
Qgs nc 11 11 0
Qgd nc 6.4 6.4 0
Qg nc 51 42.002 -17.64

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 1790 1760 -1.68
0.5 1500 1500 0
1.0 1300 1285 -1.15
5.0 675 695 2.96
10.0 490 492 0.41
20.0 350 338 -3.43
Simulation
Measurement

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Time
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
V(G) V(D)/1.5
0V
5V
10V
15V
20V
U1
TPCA8058-H
D
V1TD = 2u
TF = 20n
PW = 5u
PER = 500u
V1 = 0
TR = 20n
V2 = 20 VCC
15
0
RL
0.79
L2
50nH
12
L1
30nH
12
R2
4.7
G
R1
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: ID=19(A), VDD=15(V), VGS=10/0(V)
Parameter Unit Measurement Simulation %Error
ton ns 13 12.406 -4.57

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V_VDS
0V 0.4V 0.8V 1.2V 1.6V 2.0V
-I(VDS)
0A
20A
40A
60A
80A
100A
VGS
0
VDS
U1
TPCA8058-H
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.8V
3
3.1
3.2
3.3
3.4
3.6
10, 8, 6, 5, 4.5, 4

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VDS)
1.0A
10A
100A
1.0KA
VDS
0
U1
TPCA8058-H
FWD Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
1 0.671 0.670 -0.15
2 0.691 0.692 0.14
5 0.722 0.723 0.14
10 0.750 0.748 -0.27
20 0.778 0.778 0.00
50 0.836 0.834 -0.24
100 0.900 0.900 0.00

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Time
9.6us 9.8us 10.0us 10.2us 10.4us 10.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 10us
PER = 1ms
V1 = -9.2V
TR = 10ns
V2 = 10.7V
R1
50
U1
TPCA8058-H
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 16 15.951 -0.31

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Reverse Recovery Characteristics Reference
Trj = 16(ns)
Trb = 78(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement